View ZXMC6A09DN8TC_1339811.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

ZXMC6A09DN8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
* Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package
SO8
APPLICATIONS
* Motor drive * LCD backlighting
Q1 = N-CHANNEL Q2 = P-CHANNEL
ORDERING INFORMATION
DEVICE ZXMC6A09DN8TA ZXMC6A09DN8TC REEL 7'` 13'` TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units
PINOUT
DEVICE MARKING
ZXMC 6A09
Top view
ISSUE 3 - AUGUST 2004 1
ZXMC6A09DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 @V GS =10V; T A =25 @V GS =10V; T A =25 C Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T A =25C Linear Derating Factor
(a)(d) (c) (b)
SYMBOL V DSS V GS C (b)(d) C (b)(d) (a)(d) ID
N-Channe l 60 20 5.1 4.1 3.9 25.4 3.5 25.4
P-Channel -60 20 -4.8 -3.8 -3.7 -23.8 -3.3 -23.8
UNIT V V A A A A A W mW/C W mW/C W mW/C C
I DM IS I SM PD PD PD T j :T stg
1.25 10 1.8 14 2.1 17 -55 to +150
Power Dissipation at T A =25C (a)(e) Linear Derating Factor Power Dissipation at T A =25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER Junction to Ambient Junction to Ambient Junction to Ambient
Notes: (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec. (a)(d) (b)(e) (b)(d)
SYMBOL R JA R JA R JA
VALUE 100 69 58
UNIT C/W C/W C/W
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power.
ISSUE 3 - AUGUST 2004 2
ZXMC6A09DN8
CHARACTERISTICS
ISSUE 3 - AUGUST 2004 3
ZXMC6A09DN8
N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING
(2) (3) (1)
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs
60 1.0 100 1.0 0.045 0.070 15
V A nA V
I D =250A, V GS =0V V DS =60V, V GS =0V V GS = 20V, V DS =0V I =250 A, V DS = V GS D V GS =10V, I D =8.2A V GS =4.5V, I D =7.4A
S
V DS =15V,I D =8.2A
C iss C oss C rss
1407 121 59
pF pF pF V DS =40V, V GS =0V, f=1MHz
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge
NOTES (3)
t d(on) tr t d(off) tf Qg Qg Q gs Q gd
4.9 3.3 28.5 11.0 12.4 24.2 5.2 3.5
ns ns ns ns nC nC nC nC V DS =15V,V GS =10V, I D =3.5A V DS =15V,V GS =5V, I D =3.5A V DD =30V, I D =1.0A R G 6.0, V GS =10V
V SD t rr Q rr
0.85 26.3 26.6
0.95
V ns nC
T J =25C, I S =6.6A, V GS =0V T J =25C, I F =3.5A, di/dt= 100A/ s
(1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
ISSUE 3 - AUGUST 2004 4
ZXMC6A09DN8
P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING
(2) (3) (1)
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs
-60 -1.0 100 -1.0 0.055 0.080 9.3
V A nA V
I D =-250A, V GS =0V V DS =-60V, V GS =0V V GS = 20V, V DS =0V I =-250 A, V DS = V GS D V GS =-10V, I D =-3.5A V GS =-4.5V, I D =-2.9A
S
V DS =-15V,I D =-3.5A
C iss C oss C rss
1706 111 68.0
pF pF pF V DS =-30 V, V GS =0V, f=1MHz
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge
NOTES (3)
t d(on) tr t d(off) tf Qg Qg Q gs Q gd
2.3 29.0 59.8 28.1 20.8 41.0 4.1 6.8
ns ns ns ns nC nC nC nC V DS =-30V,V GS =-10V, I D =-3.5A V DS =-30V,V GS =-5V, I D =-3.5A V DD =-30V, I D =-1A R G 6.0, V GS =-10V
V SD t rr Q rr
-0.85 30.6 41.3
-0.95
V ns nC
T J =25C, I S =-4.2A, V GS =0V T J =25C, I F =-2.1A, di/dt= 100A/s
(1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
ISSUE 3 - AUGUST 2004 5
ZXMC6A09DN8
N-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 3 - AUGUST 2004 6
ZXMC6A09DN8
N-CHANNEL TYPICAL CHARACTERISTICS
VGS Gate-Source Voltage (V)
1800 1600 1400 1200 1000 800 600 400 200 0
10
ID = 3.5A
C Capacitance (pF)
8 6 4 2 0 0 5 10 15 20 25
VDS = 15V
VGS = 0V f = 1MHz
CISS COSS CRSS
VDS - Drain - Source Voltage (V)
1
10
Q - Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
ISSUE 3 - AUGUST 2004 7
ZXMC6A09DN8
P-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 3 - AUGUST 2004 8
ZXMC6A09DN8
P-CHANNEL TYPICAL CHARACTERISTICS
-VGS Gate-Source Voltage (V)
2500 2250 2000 1750 1500 1250 1000 750 500 250 0 0.1
10
VGS = 0V f = 1MHz ID = -3.5A
C Capacitance (pF)
8 6 4 2
VDS = -30V
CISS COSS CRSS
1
10
0 0
10
20
30
40
-VDS - Drain - Source Voltage (V)
Q - Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
ISSUE 3 - AUGUST 2004 9
ZXMC6A09DN8
PACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS
PACKAGE DIMENSIONS
Millimeters DIM Min A A1 D H E L 1.35 0.10 4.80 5.80 3.80 0.40 Max 1.75 0.25 5.00 6.20 4.00 1.27 Min 0.053 0.004 0.189 0.228 0.150 0.016 Max 0.069 0.010 0.197 0.244 0.157 0.050 h e b c Inches DIM Min Max Min Max 1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50 0.050 BSC 0.013 0.008 0 0.010 0.020 0.010 8 0.020 Millimeters Inches
(c) Zetex Semiconductors plc 2004
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com
ISSUE 3 - AUGUST 2004 10

▲Up To Search▲

Price & Availability of ZXMC6A09DN8TC

	To Download ZXMC6A09DN8TC Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .