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 ZXMN2A01E6
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12
ID = 3.1A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
* Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT23-6 package
SOT23-6
APPLICATIONS
* DC - DC Converters * Power management functions * Disconnect switches * Motor control
ORDERING INFORMATION
DEVICE ZXMN2A01E6TA ZXMN2A01E6TC REEL SIZE 7" 13" TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units
PINOUT
DEVICE MARKING
* 2A1
Top View
ISSUE 3 - FEBRUARY 2006 1
ZXMN2A01E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V; T A =25C (b) V GS =10V; T A =70C (b) V GS =10V; T A =25C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a) Linear Derating Factor Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT 20 12 3.1 2.5 2.5 11 2.4 11 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V A
I DM IS I SM PD PD T j :T stg
A A A W mW/C W mW/C C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 113 70 UNIT C/W C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 3 - FEBRUARY 2006 2
ZXMN2A01E6
CHARACTERISTICS
ISSUE 3 - FEBRUARY 2006 3
ZXMN2A01E6
ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated)
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V (BR)DSS I DSS I GSS V GS(th) 0.7 20 1 100 V A nA V 0.12 0.225 6.1 S I D =250A, V GS =0V V DS =20V, V GS =0V V GS = 12V, V DS =0V I =250A, V DS = V GS D V GS =4.5V, V GS =2.5V, I D =4A I D =1.5A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr 0.9 23 5.65 t d(on) tr t d(off) tf Qg Q gs Q gd 2.49 5.21 7.47 4.62 3.0 0.8 1.0 C iss C oss C rss 303 59 30 g fs
V DS =10V,I D =4A
pF pF pF V DS =15 V, V GS =0V, f=1MHz
ns ns ns ns nC nC nC V DS =10V,V GS =4.5V, I D =4A V DD =10V, I D =4A R G =6.0, V GS =5V
0.95
V ns nC
T J =25C, I S =3.2A, V GS =0V T J =25C, I F = 4A, di/dt= 100A/s
NOTES: (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
ISSUE 3 - FEBRUARY 2006 4
ZXMN2A01E6
TYPICAL CHARACTERISTICS
ISSUE 3 - FEBRUARY 2006 5
ZXMN2A01E6
TYPICAL CHARACTERISTICS
C Capacitance (pF)
400
CISS COSS
200
CRSS
VGS Gate-Source Voltage (V)
VGS = 0V f = 1MHz
0 0.1
1
10
4.5 4.0 ID = 4A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0
VDS = 10V
1
2
3
4
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Q - Charge (nC) Gate-Source Voltage v Gate Charge
ISSUE 3 - FEBRUARY 2006 6
ZXMN2A01E6
PACKAGE OUTLINE PAD LAYOUT DETAILS
b
e L2
E
E1
e1 D
a
DATUM A
C
A
A2
A1
CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES
PACKAGE DIMENSIONS
Millimeters DIM Min A A1 A2 b C D 0.90 0.00 0.90 0.35 0.09 2.80 Max 1.45 0.15 1.30 0.50 0.20 3.00 Min 0.35 0 0.035 0.014 0.0035 0.110 Max 0.057 0.006 0.051 0.019 0.008 0.118 E E1 L e e1 L Inches DIM Min 2.60 1.50 0.10 Max 3.00 1.75 0.60 Min 0.102 0.059 0.004 Max 0.118 0.069 0.002 Millimeters Inches
0.95 REF 1.90 REF 0 10
0.037 REF 0.074 REF 0 10
(c) Zetex Semiconductors plc 2006
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com
ISSUE 3 - FEBRUARY 2006 7


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