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ZXMP3A16N8
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.040
ID = -6.7A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
* Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package
SO8
APPLICATIONS
* Disconnect switches * Motor control
ORDERING INFORMATION
DEVICE ZXMP3A16N8TA ZXMP3A16N8TC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units
PINOUT
DEVICE MARKING
* ZXMP
3A16 Top View
PROVISIONAL ISSUE A - JULY 2002 1
ZXMP3A16N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =-10V; T A =25C (b) V GS =-10V; T A =70C (b) V GS =-10V; T A =25C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a) Linear Derating Factor Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT -30 20 -6.7 -5.4 -5.6 -26 -3.2 -26 1.9 15.2 2.8 22.4 -55 to +150 UNIT V V A
I DM IS I SM PD PD T j :T stg
A A A W mW/C W mW/C C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 65 45 UNIT C/W C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
PROVISIONAL ISSUE A - JULY 2002 2
ZXMP3A16N8
CHARACTERISTICS
10 1
Max Power Dissipation (W)
-ID Drain Current (A)
RDS(on) Limited
2.0 1.6 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 140 160
DC 1s 100ms 10ms Single Pulse Tamb=25C 1ms 100s
100m 10m
-VDS Drain-Source Voltage (V)
1
10
Temperature (C)
Safe Operating Area
70 60 50 40 30 20 10 0 100 1m 10m 100m 1
D=0.2 D=0.1 Single Pulse D=0.05 D=0.5 Tamb=25C
Derating Curve
Thermal Resistance (C/W)
MaximumPower (W)
100
Single Pulse Tamb=25C
10
10
100
1k
1 100 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
PROVISIONAL ISSUE A - JULY 2002 3
ZXMP3A16N8
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V (BR)DSS I DSS I GSS V GS(th) SYMBOL
MIN. -30
TYP.
MAX.
UNIT CONDITIONS. V
I D =-250A, V GS =0V V DS =-30V, V GS =0V V GS = 20V, V DS =0V I =-250 A,V DS = V GS D V GS =-10V, I D =-4.2A V GS =-4.5V, I D =-3.4A V DS =-15V,I D =-4.2A
-1.0 100 -1.0 0.040 0.070 9.2 970 166 116 1.95 3.82 31.8 10.2 12.9 24.9 2.67 3.86 -0.85 21.2 18.7 -0.95
A nA V
Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr t d(on) tr t d(off) tf Qg Qg Q gs Q gd C iss C oss C rss g fs
S pF pF pF ns ns ns ns nC nC nC nC V ns nC
V DS =-15 V, V GS =0V, f=1MHz
V DD =-15V, I D =-1A R G =6.0, V GS =-10V
V DS =-15V,V GS =-5V, I D =-4.2A V DS =-15V,V GS =-10V, I D =-4.2A
T J =25C, I S =-3.6A, V GS =0V T J =25C, I F =-2A, di/dt= 100A/s
NOTES (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 2002 4
ZXMP3A16N8
CHARACTERISTICS
T = 25C
10V
4V
-ID Drain Current (A)
10
-ID Drain Current (A)
3.5V 3V 2.5V 2V -VGS
T = 150C
10V
4V
10
3.5V 3V 2.5V 2V 1.5V
1
1
-VGS
0.1
1.5V
0.1
0.01
0.1
-VDS Drain-Source Voltage (V)
1
10
0.01
0.1
-VDS Drain-Source Voltage (V)
1
10
Output Characteristics
1.6
T = 150C T = 25C
Output Characteristics
VGS = -10V ID = -4.2A RDS(on)
Normalised RDS(on) and VGS(th)
10
-ID Drain Current (A)
1.4 1.2 1.0 0.8 0.6 0.4 -50 0
1
VGS(th) VGS = VDS ID = -250uA
-VDS = 10V
0.1 1
2
3
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (C)
Typical Transfer Characteristics
100
RDS(on) Drain-Source On-Resistance () -ISD Reverse Drain Current (A)
Normalised Curves v Temperature
100 10 1 0.1 0.01 0.01
1.5V -VGS 2V
T = 25C
T = 150C
10 1 0.1
T = 25C
2.5V 3V 3.5V 4V 10V
0.1
1
10
0.01 0.0
-ID Drain Current (A)
-VSD Source-Drain Voltage (V)
0.2
0.4
0.6
0.8
1.0
1.2
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE A - JULY 2002 5
ZXMP3A16N8
CHARACTERISTICS
C Capacitance (pF)
1200 1000 800 600 400 200 0 0.1 1
CISS COSS
-VGS Gate-Source Voltage (V)
1400
10
VGS = 0V f = 1MHz -ID = 4.2A
8 6 4 2
-VDS = 15V
CRSS
10
0 0
5
10
15
20
25
-VDS - Drain - Source Voltage (V)
Q - Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
C URRENT R EGULATOR
QG
50K 12V 0 .2 F 0 .3 F
S AME AS D .U .T
-10V
Q GS Q GD
IG
V DS
D .U .T
VG
VGS
ID
C HARGE
B ASIC G ATE C HARGE W AVEFORM
G ATE C HARGE TEST C IRCUIT
VGS 10%
VGS RG
RD
V DS V CC
90% VDS
T D(ON)
T R
P ULSE W IDTH < 1 S
D UTY F ACTOR 0 .1 %
T D(OFF)
T F
S WI TCHING TIME W AVEFORMS
S WI TCHING TIME TEST C IRCUIT
PROVISIONAL ISSUE A - JULY 2002 6
ZXMP3A16N8
PACKAGE OUTLINE PACKAGE DIMENSIONS
INCHES DIM MIN A A1 D H E L e b c 0.053 0.004 0.189 0.228 0.150 0.016 MAX 0.069 0.010 0.197 0.244 0.157 0.050 MIN 1.35 0.10 4.80 5.80 3.80 0.40 MAX 1.75 0.25 5.00 6.20 4.00 1.27 MILLIMETRES
0.050 BSC 0.013 0.008 0 0.020 0.010 8 0.020
1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50
CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES
h
0.010
(c) Zetex plc 2002
Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uk.sales@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to
www.zetex.com
PROVISIONAL ISSUE A - JULY 2002 7

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