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| Ordering number : ENA0727 TF202C SANYO Semiconductors DATA SHEET N-channel Silicon Junction FET TF202C Features * * * * * Electret Condenser Microphone Applications Especially suited for use in electret condenser microphone for audio equipments and telephones. Ultrasmall package permitting applied sets to be small and slim. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW C C Electrical Characteristics at Ta=25C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Drain Current Symbol V(BR)GDO VGS(off) IDSS IG=-100A VDS=5V, ID=1A VDS=5V, VGS=0V Conditions Ratings min --20 --0.2 140* --0.6 --1.2 350* typ max Unit V V A Marking: E * : The TF202C is classified by IDSS as follows : (unit : A) Rank E4 E5 IDSS 140 to 240 210 to 350 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31407GB TI IM TC-00000549 No. A0727-1/5 TF202C Continued from preceding page. Parameter Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Voltage Gain Reduced Voltage Characteristic Frequency Characteristic Input Impedance Output Impedance Total Harmonic Distortion Output Noise Voltage Symbol yfs Ciss Crss GV GVV Gvf ZIN ZO THD VNO Conditions VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1MHz VDS=5V, VGS=0V, f=1MHz VIN=10mV, f=1kHz VIN=10mV, f=1kHz, VCC=4.51.5V f=1kHz to 110Hz f=1kHz f=1kHz VIN=30mV, f=1kHz VIN=0V, A curve 25 1000 1.0 --110 Ratings min 0.5 typ 1.2 3.5 0.65 --3.0 --1.2 --3.5 --1.0 max Unit mS pF pF dB dB dB M % dB [Ta=25C, VCC=4.5V, RL=1k, Cin=15pF, See specified Test Circuit.] Package Dimensions unit : mm (typ) 7048-001 Top View 1.2 0.11 Test Circuit 0.2 Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 1k VCC=4.5V VCC=1.5V 15pF 33F + 3 0 to 0.02 1.2 0.8 1 0.2 2 0.2 0.4 VTVM V OSC THD 0.38 BA 1 0.15 2 Output Impedance 1 : Drain 2 : Source 3 : Gate SANYO : TSSFP 3 Bottom View 500 450 400 ID -- VDS 500 450 400 ID -- VDS Drain Current, ID -- A 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 Drain Current, ID -- A 350 300 250 200 VGS=0V VGS=0V --0.1V --0.1V 150 100 50 0 0 1 2 3 --0.2V --0.3V --0.4V 7 8 --0.2V --0.5V 9 10 IT02310 --0.3V --0.4V 4 --0.5V 5 IT03015 Drain-to-Source Voltage, VDS -- V Drain-to-Source Voltage, VDS -- V No. A0727-2/5 TF202C 500 450 400 ID -- VGS VDS=5V 400 360 320 ID -- VGS VDS=5V Drain Current, ID -- A 350 300 250 200 150 100 Drain Current, ID -- A 280 240 200 160 120 80 40 50 0 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 0 --1.0 --0.9 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --2 --0.2 --0.1 1 5 C A 50 Ta = 2 75 C ID 50 =3 SS A 50 25 C A --0 Gate-to-Source Voltage, VGS -- V 1.3 IT02312 --0.70 --0.65 yfs -- IDSS Gate-to-Source Voltage, VGS -- V IT02313 VGS(off) -- IDSS Forward Transfer Admittance, yfs -- mS 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 Cutoff Voltage, VGS(off) -- V VDS=5V VGS=0V f=1kHz VDS=5V ID=1A --0.60 --0.55 --0.50 --0.45 --0.40 --0.35 --0.30 100 200 300 400 Drain Current, IDSS -- A 100 500 IT02314 120 0 100 200 300 400 THD -- VIN Drain Current, IDSS -- A 500 IT02315 PD -- Ta Allowable Power Dissipation, PD -- mW Total Harmonic Distortion, THD -- % THD : VCC=4.5V f=1kHz IDSS : VDS=5.0V 10 100 250A I DSS= 150A 350A 80 60 1.0 40 20 0.1 0 50 100 150 200 IT02316 0 0 20 40 60 80 100 120 140 160 Input Voltage, VIN -- mV 2 Ambient Temperature, Ta -- C 5 IT02317 Ciss -- VDS Reverse Transfer Capacitance, Crss -- pF Crss -- VDS VGS=0V f=1MHz VGS=0V f=1MHz Input Capacitance, Ciss -- pF 10 7 5 3 2 1.0 7 5 3 2 3 2 1.0 7 1.0 2 3 5 7 10 2 3 0.1 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V ITR03814 Drain-to-Source Voltage, VDS -- V ITR03815 No. A0727-3/5 TF202C GV : VCC=4.5V VIN=10mV RL=1.0k f=1kHz IDSS : VDS=5.0V Reduced Voltage Characteristics, GVV -- dB 0 GV -- IDSS --0.5 GVV -- IDSS GVV : VCC=4.5V1.5V --1 --0.7 Voltage Gain, GV -- dB VIN=10mV f=1kHz IDSS : VDS=5.0V --2 --0.9 --3 --1.1 --4 --1.3 --5 --6 --7 0 100 200 300 400 --1.5 --1.7 0 100 200 300 400 Drain Current, IDSS -- A 2.5 500 IT02320 32 THD -- IDSS Drain Current, IDSS -- A 500 IT02321 ZIN -- IDSS Total Harmonic Distortion, THD -- % Input Impedance, ZIN -- M 2.0 THD : VCC=4.5V VIN=30mV f=1MHz IDSS : VDS=5.0V 31 Zi : VCC=4.5V VIN=10mV f=1kHz IDSS : VDS=5.0V 30 1.5 29 1.0 28 0.5 27 0 0 100 200 300 400 26 Drain Current, IDSS -- A 960 500 IT02322 --111 0 100 200 300 400 ZO -- IDSS Drain Current, IDSS -- A 500 IT02323 VNO -- IDSS 950 Output Noise Voltage, VNO -- dB Output Impedance, ZO -- ZO : VCC=4.5V VIN=10mV f=1kHz IDSS : VDS=5.0V --112 --113 --114 --115 --116 --117 --118 --119 VNO : VCC=4.5V VIN=0V, ACurve RL=1.0k IDSS : VDS=5.0V 940 930 920 910 900 0 100 200 300 400 --120 Drain Current, IDSS -- A 500 IT02324 0 100 200 300 400 Drain Current, IDSS -- A 500 IT02325 No. A0727-4/5 TF202C SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2007. Specifications and information herein are subject to change without notice. PS No. A0727-5/5 |
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