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| NTMS4503N Power MOSFET 28 V, 14 A, N-Channel, SO-8 Features * Low RDS(on) * High Power and Current Handling Capability * Low Gate Charge Applications V(BR)DSS 28 V http://onsemi.com RDS(on) TYP 7.0 mW @ 10 V 8.8 mW @ 4.5 V ID MAX (Note 1) 14 A * * * * DC/DC Converters Motor Drives Synchronous Rectifier - POL Buck Low-Side D MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current Continuous @ Ta = 25C (Note 1) Continuous @ Ta = 25C (Note 2) Continuous @ Ta = 25C (Note 3) Single Pulse (tp = 10 ms) Total Power Dissipation TA = 25C (Note 1) TA = 25C (Note 2) TA = 25C (Note 3) Operating and Storage Temperature Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 30 V, VGS = 10 V, IL = 12.2 A, L = 1.0 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID 14 12 9.0 40 W 2.5 1.66 0.93 TJ, Tstg EAS -55 to 150 75 C mJ 8 Value 28 $20 Unit V V A S G IDM PD MARKING DIAGRAM/ PIN ASSIGNMENT 1 1 8 Drain Drain Drain Drain 4503N ALYW SO-8 CASE 751 STYLE 12 4503N A L Y W Source Source Source Gate (Top View) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week TL 260 C THERMAL RESISTANCE RATINGS Rating Thermal Resistance Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Junction-to-Ambient (Note 3) Symbol RqJA Value 50 75 135 Unit C/W ORDERING INFORMATION Device NTMS4503NR2 Package SO-8 Shipping 2500/Tape & Reel 1. Surface-mounted on FR4 board using minimum recommended pad size (Cu area 0.412 in2), t < 10 s. 2. Surface-mounted on FR4 board using 1 pad size (Cu area 1.127 in2) steady state. 3. Surface-mounted on FR4 board using minimum recommended pad size (Cu area 0.412 in2), steady state. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2003 1 November, 2003 - Rev. 0 Publication Order Number: NTMS4503N/D NTMS4503N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS VGS = 0 V, ID = 250 mA - TJ = 25C TJ = 100C 28 - - - - 31 22 - - - - - 1.0 25 $100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit VGS = 0 V VDS = 24 V V, Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = $20 V VGS(TH) VGS(TH)/TJ RDS(on) () VGS = VDS, ID = 250 mA - VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 10 A 1.0 - - - - - -5.0 7.0 8.8 30 2.0 - 8.0 9.8 - V mV/C mW Forward Transconductance gFS VDS = 10 V, ID = 14 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4 5 V VDS = 16 V ID = 10 A 4.5 V, V, VGS = 0 V, f = 1.0 MHz, VDS = 16 A , , - - - - - - - 2400 1000 375 23 2.0 5.0 12 - - - - - - - nC pF SWITCHING CHARACTERISTICS, VGS = V (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V IS = 10 A V, TJ = 25C TJ = 125C - - - VGS = 0 V, dISD/dt = 100 A/ms, IS = 14 A - - - 0.82 0.65 48 23 25 25 1.2 - - - - - nC ns V td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 16 V, ID = 10 A, RG = 2.0 W - - - - 18.5 70 21 23 - - - - ns Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR Ta Tb QRR 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMS4503N TYPICAL PERFORMANCE CURVES 30 ID, DRAIN CURRENT (AMPS) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 2.6 V 2.8 V VGS = 10, 3.6, 3.2 V 35 3V TJ = 25C ID, DRAIN CURRENT (AMPS) 30 25 20 15 10 5 0 10 1 TJ = 25C TJ = -55C TJ = 100C 4 VDS 10 V 2.4 V 2.2 V 9 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2.5 1.5 2 3 3.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.011 ID = 14 A TJ = 25C 0.012 Figure 2. Transfer Characteristics TJ = 25C 0.011 0.010 0.009 0.008 VGS = 10 V 0.007 0.006 0.005 0.004 4 8 12 16 20 ID, DRAIN CURRENT (AMPS) VGS = 4.5 V 0.010 0.009 0.008 0.007 0.006 1 9 3 5 7 11 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 14 A VGS = 4.5 V 1.4 IDSS, LEAKAGE (nA) 1000 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1.2 1 100 TJ = 100C 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTMS4503N TYPICAL PERFORMANCE CURVES TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4200 3600 C, CAPACITANCE (pF) 3000 2400 1800 1200 600 0 10 VDS = 0 V 5 VGS 0 VDS VGS = 0 V 5 10 15 Crss 20 Coss Crss Ciss 5 QT 4 VDS QGS QGD VGS 20 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 16 3 12 Ciss 2 8 1 0 0 5 ID = 10 A TJ = 25C 10 20 15 QG, TOTAL GATE CHARGE (nC) 4 0 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 tr tf td(off) td(on) IS, SOURCE CURRENT (AMPS) VDD = 16 V ID = 10 A VGS = 4.5 V t, TIME (ns) 100 10 9 8 7 6 5 4 3 2 Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 10 1 1 10 RG, GATE RESISTANCE (OHMS) 100 1 0 0.4 0.7 0.5 0.6 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTMS4503N PACKAGE DIMENSIONS SO-8 CASE 751-07 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 -X- A 8 5 B 1 4 S 0.25 (0.010) M Y M -Y- G C -Z- H D 0.25 (0.010) M SEATING PLANE K N X 45 _ 0.10 (0.004) M J ZY S X S DIM A B C D G H J K M N S STYLE 12: PIN 1. 2. 3. 4. 5. 6. 7. 8. http://onsemi.com 5 NTMS4503N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTMS4503N/D |
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