 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 4M x 8 SRAM MODULE SYS84000RKX - 85/10/12 Issue 1.7 : April 2001 Description The SYS84000RKX is a plastic 32Mbit Static RAM Module housed in a standard 38 pin Single In-Line package organised as 4M x 8 with access times of, 85,100, or 120 ns. The module is constructed using eight 512Kx8 SRAMs in TSOPII packages mounted onto both sides of an FR4 epoxy substrate. This offers an extremely high PCB packing density. The device is offered in standard and low power versions, with the -L module having a low voltage data retention mode for battery backed applications. Buffering is provided on the module to reduce the output capacitance to 8pF(Typ). Note: CS and OE on the module, should be used with care to avoid on and off board bus contention. Features Access Times of 85/100/120 ns. Low Power Disipation: Operating 770 mW (Max.) Standby-L Version (CMOS) 4.84mW (Max.) * 5 Volt Supply 10%. * Completely Static Operation. * Equal Access and Cycle Times. * Low Voltage VCC Data Retention. * On-board Decoding & Capacitors. * 38 Pin Single-In-Line package (SIP). * Upgrade path to SYS88000RKX (64Mbits). * * Block Diagram Pin Definition NC A20 Vcc WE D2 D3 D0 A1 A2 A3 A4 GND D5 A10 A11 A5 A13 A14 A19 CS A15 A16 A12 A18 A6 D1 GND A0 A7 A8 A9 D7 D4 D6 A17 Vcc OE A21 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 OE WE A0 - A18 512K x 8 SRAM CS CS CS CS T/R A19 A20 A21 Q0~3 DECODER Q4~7 D0 - D7 D0 - D7 /8 CS CS 512K x 8 SRAM OE CS CS CS Pin Functions Address Inputs Data Input/Output Chip Select Write Enable Output Enable No Connect Power (+5V) Ground A0 - A21 D0 - D7 CS WE OE NC VCC GND Package Details Plastic 38 pin Single-In-Line (SIP) ISSUE 1.7 April 2001 SYS84000RKX - 85/10/12 DC OPERATING CONDITIONS Absolute Maximum Ratings (1) Parameter Voltage on any pin relative to VSS Power Dissipation Storage Temperature Symbol V PT TSTG (2) T Min -0.3 -55 Typ - Max 7.0 2.0 125 Unit V W o C Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temperature Symbol VCC VIH VIL TA TAI Min 4.5 2.2 -0.3 0 -40 Typ 5.0 - Max 5.5 VCC+0.3 0.8 70 85 Unit V V V o C o C (Commercial) (Industrial) DC Electrical Characteristics (VCC=5V10%) TA 0 to 70 oC Parameter I/P Leakage Current Address,OE,WE Symbol Test Condition ILI ILO ICC1 TTL levels CMOS levels -L Version (CMOS) Min Typ -8 -8 2.4 - max 8 8 140 24 16 880 0.4 - Unit A A mA mA mA uA V V 0V < VIN < VCC CS = VIH, VI/O = GND to VCC Min. Cycle, CS = VIL,VIL ISB1 ISB2 ISB3 VOL VOH Output Voltage Typical values are at VCC=5.0V,TA=25oC and specified loading. Add 420mA to -L & -P CMOS standby currents to obtain industrial temp range parameters. Capacitance (VCC=5V10%,TA=25oC) Note: Capacitance calculated, not measured. Parameter Input Capacitance (Address,OE,WE) I/P Capacitance (other) I/O Capacitance Symbol Test Condition CIN1 CIN2 CI/O VIN = 0V VIN = 0V VI/O = 0V max 64 12 12 Unit pF pF pF 2 SYS84000RKX - 85/10/12 ISSUE 1.7 April 2001 AC Test Conditions Output Load * Input pulse levels: 0V to 3.0V * Input rise and fall times: 5ns * Input and Output timing reference levels: 1.5V * Output load: see diagram * VCC=5V10% I/O Pin 645 1.76V 100pF Operation Truth Table CS H L L L L OE X L L H H WE X L H L H DATA PINS High Impedance Invalid State Data Out Data In High-Impedance SUPPLY CURRENT ISB1 , ISB2 , ISB3, ISB4 ~ ICC1 ICC1 ICC1 MODE Standby Invalid Read Write High-Z Notes : H = VIH : L =VIL : X = VIH or VIL OE must not be tied low permanently. Low Vcc Data Retention Characteristics - L Version Only Parameter VCC for Data Retention Data Retention Current Symbol VDR ICCDR1 (2) ICCDR3 tCDR tR Test Condition CS > VCC-0.2V VCC = 3.0V, CS > VCC-0.2V TOP = 0C to 70C TOP = TAI See Retention Waveform See Retention Waveform min 2.0 0 5 typ(1) - max 1 TBA - Unit V mA uA ns ms Chip Deselect to Data Retention Time Operation Recovery Time Notes - (1) Typical figures are measured at 25C. (2) This parameter is guaranteed not tested. ISSUE 1.7 April 2001 SYS84000RKX - 85/10/12 AC OPERATING CONDITIONS Read Cycle -85 Parameter Read Cycle Time Address Access Time Chip Select Access Time Output Enable to Output Valid Output Hold from Address Change Chip Selection to Output in Low Z Output Enable to Output in Low Z Chip Deselection to O/P in High Z Output Disable to Output in High Z -10 max 85 85 50 5 5 -12 max 100 100 55 5 5 Symbol tRC tAA tACS tOE tOH tCLZ tOLZ tCHZ tOHZ min 85 11.5 1.5 1.5 0 0 min 100 11.5 1.5 1.5 0 0 min 120 11.5 1.5 1.5 0 0 max 120 120 60 5 5 Unit ns ns ns ns ns ns ns ns ns Write Cycle -85 Parameter Write Cycle Time Chip Selection to End of Write Address Valid to End of Write Address Setup Time Write Pulse Width Write Recovery Time Write to Output in High Z *** Data to Write Time Overlap Data Hold from Write Time Output active from end of write *** -10 max 35 - -12 max 40 - Symbol tWC tCW tAW tAS tWP tWR tWHZ tDW tDH tOW min 85 75 75 0 60 5 0 40 0 5 min 100 80 80 0 70 5 0 45 0 5 min 120 100 100 0 70 5 0 45 0 5 max 40 - Unit ns ns ns ns ns ns ns ns ns ns *** Theses signals are the internal Ram signals on the module and are included to assist control signal timing. 4 SYS84000RKX - 85/10/12 ISSUE 1.7 April 2001 Read Cycle Timing Waveform (1,2) t RC Address t AA OE t OE t OLZ t OH CS t ACS t CLZ (4,5) t OHZ (3) Don't care. Dout Data Valid t CHZ (3,4,5) AC Read Characteristics Notes (1) WE is High for Read Cycle. (2) All read cycle timing is referenced from the last valid address to the first transition address. (3) tCHZ and tOHZ are defined as the time at which the outputs achieve open circuit conditions and are not referenced to output voltage levels. (4) At any given temperature and voltage condition, tCHZ (max) is less than tCLZ (min) both for a given module and from module to module. (5) These parameters are sampled and not 100% tested. Write Cycle No.1 Timing Waveform(1,4) tWC Address t WR(7) OE t AS(6) t AW t CW CS Don't Care WE t OHZ(3,9) t WP(2) High-Z t DW t DH t OW (8) Dout High-Z Din Data Valid ISSUE 1.7 April 2001 SYS84000RKX - 85/10/12 Write Cycle No.2 Timing Waveform (1,5) tWC Address t AS(6) t CW t WR(7) CS t AW t WP(2) WE t WHZ(3,9) t OW High-Z t DW tOH (8) (4) Don't Care Dout High-Z t DH Din Data Valid AC Write Characteristics Notes (1) All write cycle timing is referenced from the last valid address to the first transition address. (2) All writes occur during the overlap of CS and WE low. (3) If OE, CS, and WE are in the Read mode during this period, the I/O pins are low impedance state. Inputs of opposite phase to the output must not be applied because bus contention can occur. (4) Dout is the Read data of the new address. (5) OE is continuously low. (6) Address is valid prior to or coincident with CS and WE low, too avoid inadvertant writes. (7) CS or WE must be high during address transitions. (8) When CS is low : I/O pins are in the output state. Input signals of opposite phase leading to the output should not be applied. (9) Defined as the time at which the outputs achieve open circuit conditions and are not referenced to output voltage levels. These parameters are sampled and not 100% tested. Data Retention Waveform Vcc 4.5V DATA RETENTION MODE 4.5V tCDR 2.2V tR 2.2V V DR CS > Vcc -0.2V 0V CS 6 SYS84000RKX - 85/10/12 ISSUE 1.7 April 2001 Package Information Dimensions in mm 9 7 .1 6 M a x . 4 .3 0 M a x 2 0 .6 5 M a x . 1 3 . 5 0 + /- 0 . 5 0 0 .5 0 T y p . 2 .5 4 T y p . Ordering Information SYS84000RKXLI - 85 Speed 85 = 85 ns 10 = 100 ns 12 = 120 ns Temperature Range Blank = Commercial Temperature I = Industrial Temperature Blank = Standard Part L = Low Power Part RKX = Plastic 38 pin SIP 84000 = 4M x 8 SYS = Static RAM Power Consumption Package Organization Memory Type Note : Although this data is believed to be accurate, the information contained herein is not intended to and does not create any warranty of merchantibility or fitness for a particular purpose. Our products are subject to a constant process of development. Data may be changed at any time without notice. Products are not authorised for use as critical components in life support devices without the express written approval of a company director. |
Price & Availability of SYS84000RKXLI-85
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |