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| 2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 2N5485 2N5486 PRODUCT SUMMARY Part Number 2N/SST5484 2N/SST5485 2N/SST5486 SST5484 SST5485 SST5486 VGS(off) (V) -0.3 to -3 -0.5 to -4 -2 to -6 V(BR)GSS Min (V) -25 -25 -25 gfs Min (mS) 3 3.5 4 IDSS Min (mA) 1 4 8 FEATURES D Excellent High-Frequency Gain: Gps 13 dB (typ) @ 400 MHz - 5485/6 D Very Low Noise: 2.5 dB (typ) @ 400 MHz - 5485/6 D Very Low Distortion D High AC/DC Switch Off-Isolation BENEFITS D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification APPLICATIONS D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), packages provide low-cost options and are available with tape-and-reel to support automated assembly (see Packaging Information). TO-226AA (TO-92) D S 1 D 1 TO-236 (SOT-23 ) 3 2 S 2 G G 3 Top View 2N5484 2N5485 2N5486 Top View SST5484 (H4)* SST5485 (H5)* SST5486 (H6)* *Marking Code for TO-236 For applications information see AN102 and AN105. Document Number: 70246 S-50148--Rev. G, 24-Jan-05 www.vishay.com 1 2N/SST5484 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N5484 2N5485 2N5486 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS(F) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA IG = 10 mA , VDS = 0 V -35 -25 -0.3 1 -3 5 -1 -200 -25 -0.5 4 -4 10 -1 -200 -25 -2 8 -6 20 -1 -200 V mA nA pA V -0.002 -0.2 -20 0.8 Gate-Source Forward Voltagec Dynamic Common-Source Forward TransconductanceNO TAG Common-Source Output ConductanceNO TAG Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss Crss Coss en VDS = 15 V, VGS = 0 V f = 100 Hz VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 15 V, VGS = 0 V f = 1 kHz 2.2 0.7 1 10 3 6 50 5 1 2 3.5 7 60 5 1 2 4 8 75 5 1 2 nV Hz pF mS mS High-Frequency Common-Source Transconductanced Common-Source Output Conductanced Common-Source Input Conductanced Yf (RE) fs(RE) Yos(RE) (RE) Yiis(RE) (RE) VDS = 15 V VGS = 0 V f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz VDS = 15 V, ID = 1 mA f = 100 MHz Gps VDS = 15 V ID = 4 mA f = 100 MHz f = 400 MHz 5.5 5.5 45 65 0.05 0.8 20 21 13 0.3 2 1 2.5 2.5 3 2 4 2 4 16 25 18 10 30 20 2.5 18 10 30 20 2.5 dB 0.1 1 1 75 100 100 2.5 3 3.5 mS mS mS Common-Source Power C S P Gaind Gi VDS = 15 V, VGS = 0 V RG = 1 MW , f = 1 kHz Noise Figured g NF VDS = 15 V, ID = 1 mA RG = 1 kW , f = 100 MHz VDS = 15 V ID = 4 mA RG = 1 kW www.vishay.com f = 100 MHz f = 400 MHz 2 Document Number: 70246 S-50148--Rev. G, 24-Jan-05 2N/SST5484 Series Vishay Siliconix SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED) Limits SST5484 SST5485 SST5486 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Gate-Source Forward Voltagec Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS(F) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA IG = 10 mA , VDS = 0 V -35 -25 -0.3 1 -3 5 -1 -200 -25 -0.5 -4 10 -1 -200 -25 -2 8 -6 20 -1 -200 V mA nA pA V 4 -0.002 -0.2 -20 0.8 Dynamic Common-Source Forward TransconductanceNO TAG Common-Source Output ConductanceNO TAG Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss Crss Coss en VDS = 15 V, VGS = 0 V f = 100 Hz VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 15 V, VGS = 0 V f = 1 kHz 2.2 0.7 1 10 nV Hz pF 3 6 50 3.5 7 60 4 8 75 mS mS High-Frequency Common-Source Transconductance Common-Source Output Conductance Common-Source Input Conductance Yf fs Yos Yiis VDS = 15 V VGS = 0 V f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz VDS = 15 V, ID = 1 mA f = 100 MHz Gps VDS = 15 V ID = 4 mA f = 100 MHz f = 400 MHz 5.5 5.5 45 65 0.05 0.8 20 21 13 0.3 2 1 2.5 NH dB mS mS mS Common-Source Power Gain VDS = 15 V, VGS = 0 V RG = 1 MW , f = 1 kHz Noise Figure g NF VDS = 15 V, ID = 1 mA RG = 1 kW , f = 100 MHz VDS = 15 V ID = 4 mA RG = 1 kW f = 100 MHz f = 400 MHz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. d. Not a production test. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 70246 S-50148--Rev. G, 24-Jan-05 www.vishay.com 3 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 20 IDSS - Saturation Drain Current (mA) 10 rDS(on) - Drain-Source On-Resistance ( ) gfs - Forward Transconductance (mS) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 500 100 rDS @ ID = 300 mA, VGS = 0 V 400 gos @ VDS = 10 V, VGS = 0 V f = 1 kHz gos - Output Conductance (S) 80 16 IDSS 8 12 gfs 6 300 rDS gos 60 8 4 200 40 4 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 2 100 20 0 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) -10 0 0 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) -10 0 100 nA 10 nA Gate Leakage Current ID = 5 mA gfs - Forward Transconductance (mS) 1 mA 0.1 mA 10 Common-Source Forward Transconductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz 8 TA = -55_C IG - Gate Leakage 1 nA 100 pA 10 pA 1 pA 0.1 pA 0 TA = 125_C IGSS @ 125_C 1 mA TA = 25_C 0.1 mA IGSS @ 25_C 6 25_C ID = 5 mA 4 125_C 2 0 4 8 12 16 VDG - Drain-Gate Voltage (V) 20 0.1 1 ID - Drain Current (mA) 10 Output Characteristics 10 VGS(off) = -2 V 8 ID - Drain Current (mA) 12 ID - Drain Current (mA) 15 Output Characteristics VGS(off) = -3 V VGS = 0 V -0.2 V -0.4 V VGS = 0 V 9 -0.3 V -0.6 V 6 -0.9 V -1.2 V 3 -1.5 V -1.8 V 6 4 -0.6 V -0.8 V -1.0 V -1.2 V -1.4 V 8 2 0 0 2 4 6 10 0 0 2 4 6 8 10 VDS - Drain-Source Voltage (V) www.vishay.com VDS - Drain-Source Voltage (V) Document Number: 70246 S-50148--Rev. G, 24-Jan-05 4 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics 10 VGS(off) = -2 V 8 ID - Drain Current (mA) ID - Drain Current (mA) TA = -55_C 6 25_C VDS = 10 V 8 10 VGS(off) = -3 V TA = -55_C 25_C 6 125_C VDS = 10 V Transfer Characteristics 4 125_C 4 2 2 0 0 -0.4 -0.8 -1.2 -1.6 VGS - Gate-Source Voltage (V) -2 0 0 -0.6 -1.2 -1.8 -2.4 VGS - Gate-Source Voltage (V) -3 Transconductance vs. Gate-Source Voltage 10 gfs - Forward Transconductance (mS) VGS(off) = -2 V VDS = 10 V f = 1 kHz 10 gfs - Forward Transconductance (mS) Transconductance vs. Gate-Source Voltage VGS(off) = -3 V VDS = 10 V f = 1 kHz 8 TA = -55_C 6 25_C 8 TA = -55_C 6 25_C 4 125_C 4 125_C 2 2 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 300 rDS(on) - Drain-Source On-Resistance ( ) TA = 25_C 240 AV - Voltage Gain VGS(off) = -2 V 180 -3 V 120 80 100 Circuit Voltage Gain vs. Drain Current g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 10 V ID 60 40 VGS(off) = -2 V 60 20 -3 V 0 0.1 1 ID - Drain Current (mA) 10 0 0.1 1 ID - Drain Current (mA) 10 Document Number: 70246 S-50148--Rev. G, 24-Jan-05 www.vishay.com 5 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage Crss - Reverse Feedback Capacitance (pF) f = 1 MHz Ciss - Input Capacitance (pF) 4 5 3 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz 2.4 3 VDS = 0 V 1.8 VDS = 0 V 2 10 V 1 1.2 10 V 0.6 0 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) -20 0 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) -20 100 Input Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source 100 Forward Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source bis 10 gis (mS) 10 (mS) gfs -bfs 1 1 0.1 100 200 500 1000 0.1 100 200 500 1000 f - Frequency (MHz) f - Frequency (MHz) Reverse Admittance 10 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10 -brs 1 (mS) Output Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source bos 1 (mS) -grs 0.1 0.1 gos 0.01 100 200 500 f - Frequency (MHz) 1000 0.01 100 200 500 f - Frequency (MHz) 1000 www.vishay.com 6 Document Number: 70246 S-50148--Rev. G, 24-Jan-05 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 20 Equivalent Input Noise Voltage vs. Frequency VGS(off) = -3 V VDS = 10 V 20 Output Conductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz Hz gos - Output Conductance (S) 16 16 TA = -55_C 12 25_C 125_C 4 en - Noise Voltage nV / 12 8 ID = 5 mA ID = IDSS 0 10 100 1k f - Frequency (Hz) 10 k 100 k 8 4 0 0.1 1 ID - Drain Current (mA) 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70246. Document Number: 70246 S-50148--Rev. G, 24-Jan-05 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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