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PD - 95990
AUTOMOTIVE MOSFET
Features
l l l l l l
IRLL024ZPBF
HEXFET(R) Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 150C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 55V
G S
RDS(on) = 60m ID = 5.0A
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
SOT-223
Absolute Maximum Ratings
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) i Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Parameter
Max.
5.0 4.0 40 2.8
Units
A
Power Dissipation Linear Derating Factor Gate-to-Source Voltage
i j
i
i h
1.0 0.02 16 21 38 See Fig.12a, 12b, 15, 16 -55 to + 150
W W/C V mJ A mJ C
EAS (Thermally limited) Single Pulse Avalanche Energyd Single Pulse Avalanche Energy Tested Value Avalanche CurrentA Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
g
Thermal Resistance
RJA RJA
i Junction-to-Ambient (PCB mount, steady state) j
Junction-to-Ambient (PCB mount, steady state)
Parameter
Typ.
--- ---
Max.
45 120
Units
C/W
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IRLL024ZPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
55 --- --- --- --- 1.0 7.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.049 --- 48 60 --- 80 --- 100 --- 3.0 --- --- --- 20 --- 250 --- 200 --- -200 7.0 11 1.5 --- 4.0 --- 8.6 --- 33 --- 20 --- 15 --- 380 --- 66 --- 36 --- 220 --- 53 --- 93 ---
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 3.0A m VGS = 5.0V, ID = 3.0A VGS = 4.5V, ID = 3.0A V VDS = VGS, ID = 250A VDS = 25V, ID = 3.0A S A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C nA VGS = 16V VGS = -16V ID = 3.0A nC VDS = 44V VGS = 5.0V VDD = 28V ns ID = 3.0A RG = 56 VGS = 5.0V VGS = 0V VDS = 25V pF = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V
e e e
e e
f
Source-Drain Ratings and Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 15 9.1 5.0 A 40 1.3 23 14 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 3.0A, VGS = 0V TJ = 25C, IF = 3.0A, VDD = 28V di/dt = 100A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 4.8mH RG = 25, IAS = 3.0A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population.
100% tested to this value in production.
When mounted on 1 inch square copper board. When mounted on FR-4 board using minimum
recommended footprint.
2
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IRLL024ZPBF
100
TOP VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V
100
TOP VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
3.0V 1
3.0V 1
60s PULSE WIDTH
Tj = 25C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 0.1 0.1 1
60s PULSE WIDTH
Tj = 150C 10 100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
Gfs, Forward Transconductance (S)
10 TJ = 25C 8 T J = 150C
ID, Drain-to-Source Current ()
T J = 150C 10
6
4
1
T J = 25C
2
0.1 0 2 4
VDS = 10V 60s PULSE WIDTH 6 8 10
V DS = 10V 300s PULSE WIDTH 0 2 4 6 8 10 12
0 ID,Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance vs. Drain Current
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IRLL024ZPBF
10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
6.0 ID= 3.0A
VGS, Gate-to-Source Voltage (V)
5.0
VDS= 44V VDS= 28V VDS= 11V
C, Capacitance(pF)
1000
4.0 3.0
Ciss Coss Crss
100
2.0
1.0
10 1 10 100
0.0 0 1 2 3 4 5 6 7 8
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
100
1000 100 10 100sec 1 0.1 DC T A = 25C Tj = 150C Single Pulse 0.1 1.0 10 100 1000.0 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on)
T J = 150C 10
TJ = 25C 1
VGS = 0V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, Source-to-Drain Voltage (V)
0.0001
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
0.01
0.001
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLL024ZPBF
5
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0
ID = 3.0A VGS = 10V
4
ID, Drain Current (A)
1.5
3
2
1.0
1
0 25 50 75 100 125 150 T A , Ambient Temperature (C)
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig 9. Maximum Drain Current vs. Ambient Temperature
Fig 10. Normalized On-Resistance vs. Temperature
100
10
Thermal Response ( Z thJA )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
0.1
Ri (C/W) i (sec) 5.3396 0.000805 19.881 19.771 0.706300 20.80000
0.01
1
2
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci= i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
0.0001 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLL024ZPBF
100
EAS , Single Pulse Avalanche Energy (mJ)
15V
VDS
L
DRIVER
80
ID 3.0A 0.80A BOTTOM 0.69A TOP
RG
20V VGS
D.U.T
IAS tp
+ V - DD
60
A
0.01
40
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
20
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy vs. Drain Current
10 V
QGS VG QGD
VGS(th) Gate threshold Voltage (V)
2.5
2.0
Charge
Fig 13a. Basic Gate Charge Waveform
ID = 250A
1.5
L DUT
0
VCC
1.0 -75 -50 -25 0 25 50 75 100 125 150
1K
T J , Temperature ( C )
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage vs. Temperature
6
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IRLL024ZPBF
100
Avalanche Current (A)
10
Duty Cycle = Single Pulse
1
0.01 0.05 0.10
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses
0.1
0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
25
EAR , Avalanche Energy (mJ)
20
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 3.0A
15
10
5
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy vs. Temperature
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IRLL024ZPBF
Driver Gate Drive
D.U.T
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
RD
V DS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
8
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IRLL024ZPBF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
T HIS IS AN IRFL014
PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
LOT CODE AXXXX
FL014 314P
A = AS S EMBLY S IT E DATE CODE CODE (YYWW) YY = YEAR WW = WEEK P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL)
T OP
BOT T OM
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IRLL024ZPBF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010)
TR
2.05 (.080) 1.95 (.077)
7.55 (.297) 7.45 (.294)
7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272)
16.30 (.641) 15.70 (.619)
2.30 (.090) 2.10 (.083)
NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4
330.00 (13.000) MAX.
50.00 (1.969) MIN.
NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
18.40 (.724) MAX. 14.40 (.566) 12.40 (.488)
4
3
Data and specifications subject to change without notice. This product has been designed for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04
10
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