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| 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications * * * * * 4-V gate drive Low drain-source ON resistance: RDS (ON) = 63 m (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -100 V) Enhancement model: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating -100 -100 20 -18 -72 125 937 -18 12.5 150 -55 to150 Unit V V V A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.0 Unit C/W Circuit Configuration 4 1 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = -50 V, Tch = 25C (initial), L = 3.56 mH, RG = 25 , IAR = -18 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3 1 2006-11-16 2SJ620 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf VGS 0V ID = -9 A RL = 5.55 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -100 V, VGS = 0 V ID = -10 mA, VGS = 0 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -9 A VGS = -10 V, ID = -9 A VDS = -10 V, ID = -6 A Min Typ. 85 63 15 2900 480 1000 25 45 25 Max 10 Unit A A V V m S -100 -100 -0.8 7 VOUT -2.0 120 90 pF -10 V 4.7 ns Turn-OFF time toff Duty < 1%, tw = 10 s = VDD -50 V - 170 Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge Qg Qgs Qgd VDD -80 V, VGS = -10 V, ID = -18 A - 140 90 50 nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = -18 A, VGS = 0 V IDR = -18 A, VGS = 0 V, dIDR/dt = 50 A/s Min Typ. 220 0.97 Max -18 -72 1.7 Unit A A V s C Marking Part No. (or abbreviation code) J620 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SJ620 ID - VDS -20 Common source Tc = 25C pulse test -50 -8 -6 -10 -4.5 -4 -40 -10 -8 -6 -5 -4.5 ID - VDS Common source Tc = 25C pulse test -16 Drain current ID (A) Drain current ID (A) -3.5 -4 -30 -3.5 -12 -3 -8 -20 -4 -2.5 -3 -10 VGS = -2.5 V VGS = -2 V 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 0 -4 -8 -12 -16 -20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -20 Common source VDS = -10 V pulse test -3.0 VDS - VGS Common source Tc = 25C pulse test -16 Drain current ID (A) VDS (V) Drain-source voltage -2.5 -2.0 -12 -1.5 ID = -18 A -1.0 -9 -4.5 -8 25 -4 100 Tc = -55C -0.5 0 0 -1 -2 -3 -4 -5 0 0 -2 -4 -6 -8 -10 -12 -14 -16 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 100 0.3 Common source VDS = -10 V RDS (ON) - ID Common source Tc = 25C Pulse test Forward transfer admittance Yfs (S) 50 30 () Tc = -55C 25 Drain-source on resistance pulse test 0.1 VGS = -4 V -10 100 10 RDS (ON) 0.03 0.01 -1 5 3 2 -1 -3 -5 -10 -30 -50 -100 -3 -10 -30 -100 Drain current ID (A) Drain current ID (A) 3 2006-11-16 2SJ620 RDS (ON) - Tc () 0.20 Common source pulse test 0.15 -100 -50 IDR - VDS Common source Tc = 25C pulse test -10 Drain-source on resistance RDS (ON) (A) Drain reverse current IDR -30 -10 -5 -3 -5 0.10 -4.5 VGS = -4 V 0.05 VGS = -10 V ID = -18 A -9 -1.0 -1 VGS = 0, 1 V -0.5 40 80 120 160 -0.3 0 0.4 0.8 1.2 1.6 2.0 2.4 0 -80 -40 0 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 50000 30000 -4 Vth - Tc Common source VDS = -10 V ID = -1 mA pulse test Vth (V) Ciss (pF) 10000 5000 3000 -3 Gate threshold voltage Capacitance C -2 1000 500 Common source 300 VGS = 0 V f = 1 MHz Tc = 25C 100 -0.1 -0.3 -1 Coss -1 Crss -3 -10 -30 -100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 200 -200 Dynamic input/output characteristics Common source ID = -18 A Tc = 25C pulse test -16 Drain power dissipation PD (W) VDS (V) 150 -120 VGS -12 Drain-source voltage 100 -80 VDS -20 -40 -40 VDD = -80 V -8 50 -4 0 0 40 80 120 160 0 0 40 80 120 160 0 200 Case temperature Tc (C) Total gate charge Qg (nC) 4 2006-11-16 Gate-source voltage VGS (V) 2SJ620 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-a) 3 1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 100 1m 10m 100m Single pulse PDM t T Duty = t/T Rth (ch-c) = 1.0C/W 1 10 Pulse width tw (S) Safe operating area -1000 1000 EAS - Tch Avalanche energy EAS (mJ) 800 -100 ID max (pulsed) * 100 s * Drain current ID (A) 600 ID max (continuous) -10 DC operation Tc = 25C 1 ms * 400 -1 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. -1 -10 200 -0.1 -0.1 VDSS max -100 -1000 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD Test circuit Wave form VDS RG = 25 VDD = -50 V, L = 3.56 mH AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2006-11-16 2SJ620 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-16 |
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