 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK2882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2--MOSV) 2SK2882 Chopper Regulator, DC-DC Converter and Motor Drive Applications * * * * * 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 (typ.) High forward transfer admittance: |Yfs| = 17 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 150 V) Enhancement mode: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 150 150 20 18 54 45 176 18 4.5 150 -55~150 Unit V V V A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit C/W C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 50 V, Tch = 25C (initial), L = 0.8 mH, RG = 25 , IAR = 18 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-20 2SK2882 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr VGS Turn-on time Switching time Fall time tf ton 10 V 0V 4.7 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 150 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 9 A VGS = 10 V, ID = 9 A VDS = 10 V, ID = 9 A Min 150 0.8 10 VOUT 24 ns 56 Typ. 0.09 0.08 17 1380 200 610 12 Max 10 100 2.0 0.18 0.12 Unit A A V V S pF pF pF ID = 9 A RL = 11 VDD 100 V - Duty < 1%, tw = 10 s = Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff 130 Qg Qgs Qgd VDD 120 V, VGS = 10 V, ID = 18 A - 57 43 14 nC nC nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR Test Condition Min Typ. Max 18 Unit A IDRP VDSF trr Qrr IDR = 18 A, VGS = 0 V IDR = 18 A, VGS = 0 V dIDR/dt = 100 A/s 185 1.3 54 -1.7 A V ns C Marking K2882 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-20 2SK2882 ID - VDS 20 8 6 16 10 3.5 12 3.2 8 VGS = 3 V 4 4 3.8 Common source Tc = 25C Pulse test 50 Common source Tc = 25C Pulse test ID - VDS 10 8 6 5 4.5 40 Drain current ID (A) Drain current ID (A) 30 4 20 3.5 10 3 VGS = 2.5 V 0 0 1 2 3 4 5 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 30 Common source 4 VDS - VGS Common source Tc = 25C VDS (V) VDS = 10 V Pulse test 3 Drain current ID (A) Pulse test 20 Drain-source voltage 2 ID = 18 A Tc = -55C 10 100 25 1 9 3 0 0 1 2 3 4 5 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 50 30 Common source VDS = 10 V Pulse test (S) Tc = -55C 25 1000 Common source RDS (ON) - ID Drain-source ON resistance RDS (ON) (m) 500 300 Tc = 25C Pulse test Forward transfer admittance Yfs 100 10 5 3 100 50 30 4 VGS = 10 V 1 1 3 5 10 30 50 100 10 0.1 0.3 0.5 1 3 5 10 30 50 Drain current ID (A) Drain current ID (A) 3 2006-11-20 2SK2882 RDS (ON) - Tc 200 Common source 160 ID = 18 A 120 4.5 80 9 Pulse test 100 Common source 50 30 Tc = 25C Pulse test IDR - VDS Drain-source ON resistance RDS (ON) (m) Drain reverse current IDR (A) 10 10 5 3 3 5 1 1 0 VGS = 0, -1 V 40 0 -80 -40 0 40 80 120 160 -0.4 -0.8 -1.2 -1.6 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 5000 3000 Ciss 4 Vth - Tc Common source VDS = 10 V ID = 1 mA Pulse test Vth (V) Gate threshold voltage (pF) 1000 500 300 Coss 3 Capacitance C 2 100 50 30 Crss Common source VGS = 0 V f = 1 MHz Tc = 25C 0.3 0.5 1 3 5 10 30 50 100 1 10 0.1 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 60 160 Dynamic Input/Output Characteristics 40 Common source ID = 18 A Tc = 25C Pulse test 120 VDS 80 30 VDD = 120 V 10 20 30 Drain power dissipation PD (W) 40 Drain-source voltage VDS (V) 20 60 40 VGS 0 0 40 80 120 160 0 0 20 40 60 0 Case temperature Tc (C) Total gate charge Qg (nC) 4 2006-11-20 2SK2882 rth - tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.03 0.01 0.01 0.005 0.003 10 100 1m 10 m 100 m Single pulse 0.05 0.02 PDM t T Duty = t/T Rth (ch-c) = 2.78C/W 1 10 Pulse width tw (s) Safe Operating Area 100 50 30 ID max (continuous)* ID max (pulsed)* 200 EAS - Tch Avalanche energy EAS (mJ) 100 s* 1 ms* 160 Drain current ID (A) 10 5 3 DC operation Tc = 25C 120 80 40 1 0.5 0.3 0 25 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 50 75 100 125 150 Channel temperature (initial) Tch (C) VDSS max 30 100 300 0.1 1 3 10 Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Test circuit RG = 25 VDD = 50 V, L = 0.8 mH Wave form 1 2 B VDSS AS = *L*I * B 2 - VDD VDSS 5 2006-11-20 2SK2882 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-20 |
Price & Availability of 2SK288206
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |