Part Number Hot Search : 
MAX6713S 74ABT646 AM7947 IP3524BD HMS81016 4805S 6975R10L 3UG4614
Product Description
Full Text Search
 

To Download 2SK296307 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 2SK2963
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2--MOS V)
2SK2963
DC-DC Converter, Relay Drive and Motor Drive Applications
* * * * * 4 V gate drive Low drain-source ON resistance: RDS (ON) = 0.5 (typ.) High forward transfer admittance: |Yfs| = 1.2 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 100 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation Drain power dissipation (Note 2) DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 100 100 20 1 3 0.5 1.5 137 1 0.05 150 -55 to 150 Unit V V V A
Pulse (Note 1)
JEDEC
W W mJ A mJ C C
2-5K1B
JEITA TOSHIBA
Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range
Weight: 0.05 g (typ.)
Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: Mounted on ceramic substrate (25.4 mm x 25.4 mm x 0.8 mm) Note 3: VDD = 25 V, Tch = 25C (initial), L = 221 mH, RG = 25 , IAR = 1 A Note 4: Repetitive rating: pulse width limited by maximum junction temperature. Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient Symbol Rth (ch-a) Max 250 Unit C/W
1
2007-03-16
2SK2963
Marking
Z
B
(The two digits represent the part number.)
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton Test Condition VGS = 16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 0.5 A VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.5 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz 10 V VGS 0V 50 ID = 0.5 A RL = 50 VOUT Min 100 0.8 0.6 Typ. 0.65 0.5 1.2 140 20 45 8 13 45 175 6.3 4.3 2 Max 10 100 2.0 0.95 0.7 ns nC nC nC Unit A A V V S pF pF pF
VDD 50 V - Duty 1%, tw = 10 s VDD 80 V, VGS = 10 V, ID = 1 A - VDD 80 V, VGS = 10 V, ID = 1 A - VDD 80 V, VGS = 10 V, ID = 1 A -
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 1 A, VGS = 0 V IDR = 1 A, VGS = 0 V, dIDR/dt = 50 A/s IDR = 1 A, VGS = 0 V, dIDR/dt = 50 A/s Min Typ. 80 140 Max 1 3 -1.5 Unit A A V ns C
2
2007-03-16
2SK2963
3
2007-03-16
2SK2963
4
2007-03-16
2SK2963
5
2007-03-16
2SK2963
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2007-03-16


▲Up To Search▲   

 
Price & Availability of 2SK296307

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X