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GT10G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10G131
Strobe Flash Applications
* * * * * * * Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) Peak collector current: IC = 200 A (max) Built-in zener diode between gate and emitter SOP-8 package Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation(t=10 s) Junction temperature Storage temperature range DC Pulse Pulse (Note 1) (Note 2a) (Note 2b) Symbol VCES VGES VGES ICP PC (1) PC (2) Tj Tstg Rating 400 6 8 200 1.9 1.0 150 -55~150 Unit V V A W W C C
1.2.3 Emitter 4 Gate 5.6.7.8 Collector
JEDEC JEITA TOSHIBA
2-6J1C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Weight: 0.08 g (typ.)
Circuit Configuration
8 7 6 5
Thermal Characteristics
Characteristics Thermal resistance , junction to ambient (t = 10 s) (Note2a) Thermal resistance , junction to ambient (t = 10 s) (Note2b) Symbol Rth (j-a) (1) Rth (j-a) (2) Rating 65.8 125 Unit C/W C/W 1 2 3 4
Marking
(Note 3)
10G131
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the next page.
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GT10G131
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time tf toff Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Test Condition VGE = 6 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 200 A, VGE = 4 V VCE = 10 V, VGE = 0, f = 1 MHz 4V 0 1.5 51 Min 0.6 Typ. 0.9 2.3 2800 2.8 3.1 1.8 2.0 Max 10 10 1.2 Unit A A V V pF

300V

s
VIN: tr < 100 ns = tf < 100 ns = < Duty cycle = 1%
Note
Note 1: Please use devices on condition that the junction temperature is below 150C. Repetitive rating: pulse width limited by maximum junction temperature. Note 2a : Device mounted on a glass-epoxy board (a)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
Note 2b : Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
for COLLECTOR for EMITTER for GATE
for GATE for COLLECTOR for EMITTER
Note 3: on lower right of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) Pb-Free Finish (Only a coating lead terminal) : It is marking about an underline to a week of manufacture mark.
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GT10G131
Caution on handling
This device is MOS gate type. Therefore , please care of a protection from ESD in your handling .
Caution in design
You should be design dV/dt value is below 400 V/s when IGBT turn off. definition of dv/dt
The slope of vce from 30v to 90v (attached figure.1)
dv/dt = (90V-30V) / (t) = 60V / t
waveform
waveform (expansion)
IC IC(begin) VCE 90V 30V 0V, 0A t IC(end) VCE
dv/dt
period
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GT10G131
IC - VCE
200 2.5 200
IC - VCE
3.0 2.5
(A)
(A)
160 VGE = 5.0 V 120
4.0 3.0
160 VGE = 5.0 V 120 4.0 2.0
IC
2.0
Collector current
80
Collector current
IC
80 40 Common emitter Tc = 25C 5 0 0 1 2 3 4 5
40 Common emitter Tc = -10C 0 0 1 2 3 4
Coleector-emitter voltage
VCE (V)
Collector-emitter voltage
VCE
(V)
IC - VCE
200 3.0 4.0 2.5 200
IC - VCE
4.0 3.0
(A)
(A)
160 VGE = 5.0 V 120
160 VGE = 5.0 V 120
2.5
IC
Collector current
2.0
Collector current
IC
2.0 80
80
40 Common emitter Tc = 70C 0 0 1 2 3 4 5
40 Common emitter Tc = 125C 0 0 1 2 3 4 5
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
IC - VCE
200 200
IC - VGE
(A)
(A)
160 Tc = -10C 70 120 125 80
25
160 Tc = -10C 120 125 80 70 25
IC
Collector current
40 Common emitter 0 0 VGE = 4 V 1 2 3 4 5
Collector current
IC
40
Common emitter VCE = 5 V
0 0
1
2
3
4
5
Collector-emitter voltage
VCE
(V)
Gate-emitter voltage
VGE
(V)
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GT10G131
VCE (sat) - Tc
4 1.6 Common emitter
VGE (OFF) - Tc
Common emitter VCE = 5 V IC = 200 A 170 150
Collector-emitter saturation voltage VCE (sat) (V)
3
Gate-emitter cut-off voltage VGE (OFF) (V)
VGE = 4 V
IC = 1 mA 1.2
2
120 90 60
0.8
1
0.4
0 -50
0
50
100
150
0 -50
0
50
100
150
Case temperature
Tc
(C)
Case temperature
Tc
(C)
C - VCE
10000 600 Common emitter VCC = 300 V RL = 1.5 Tc = 25C
VCE, VGE - QG
6
(V)
(pF)
VCE
Cies
500
VGE
5
Collector-emitter voltage
1000
400
4
C
300
3
100
Coes Cres
200 VCE 100
2
Common emitter VGE = 0 V f = 1 MHz Tc = 25C 100 1000
1
10 1
10
0 0
10
20
30
40
0 50
Collector-emitter voltage
VCE
(V)
Gate charge
QG
(nC)
Switching time - RG
10 Common emitter VCE = 300 V VGE = 4 V IC = 200 A Tc = 25C ton 10
Switching time - IC
(s)
Switching time
toff 3 tf
Swithching time
(s)
tr
toff
tf 1 ton Common emitter VCC = 300 V VGE = 4 V RG = 51 Tc = 25C 100 150 200
tr
1 1
10
100
1000
0.1 0
50
Gate resistance
RG
()
Collector current
IC
(A)
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Gate-emitter voltage
Capacitance
VGE
(V)
GT10G131
Minimum gate drive area
240 800
Maximum operating area
(A)
200
ICP
Tc = 25C 70
(F) Main capacitance CM
600
160
Peak collector current
120
400
80
200
40
VCM = 350 V Tc < 70C = VGE = 4.0 V < < 10 = RG = 300 40 80 120 160 200 240
0 0
2
4
6
8
0 0
Gate-emitter voltage
VGE
(V)
Peak collector current
ICP
(A)
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GT10G131
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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