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HN7G02FU
TOSHIBA Multi Chip Discrete Device
HN7G02FU
Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
Q1 (transistor): RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent Unit: mm
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating -50 -50 -5 -100 Unit V V V mA
Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Gate-source voltage DC drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA
JEDEC JEITA TOSHIBA Weight: g (typ.)

Q1, Q2 Common Ratings (Ta = 25C) Marking
Characteristics Collector power dissipation Junction temperature Storage temperature range Symbol PC (Note 1) Tj Tstg Rating 200 150 -55~150 Unit mW C C
FT
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum Equivalent ratings. Please design the appropriate reliability upon reviewing the Toshiba 6 5 Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Q1
Circuit (top view)
4
Q2
Note 1: Total rating
1
2
3
1
2007-11-01
HN7G02FU
Q1 (Transistor) Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input resistor Symbol ICBO IEBO hFE VCE (sat) R1 Test Condition VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -5 V, IC = -1 mA IC = 5 mA, IB = -0.25 mA Min 120 3.29 Typ. -0.1 4.7 Max -100 -100 400 -0.3 6.11 V k Unit nA nA
Q2 (MOS-FET) Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Symbol IGSS V (BR) DSS IDSS Vth Yfs RDS (ON) Test Condition VGS = 10 V, VDS = 0 ID = 100 A, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA VGS = 2.5 V Min 20 0.5 20 Typ. 20 Max 1 1 1.5 40 Unit A V A V mS
2
2007-11-01
HN7G02FU
Q1 (Transistor) IC - VI (ON)
-3000 -50 -30
IC - VI (OFF)
(A)
Collector current IC
-10 -5 -3 Ta = 100C 25 -25 -1 Common emitter -0.5 -0.3 -0.1 -0.3 -1 -3 VCE = -0.2 V -10 -30 -100
Collector current IC
(A)
-1000 -500 Ta = 100C -300
25
-25
-100 -50 -30 -0 -0.2 -0.4 -0.6 -0.8 -1 Common emitter VCE = -5 V -1.2 -1.4 -1.6
Input voltage
VI (ON)
(V)
Input voltage
VI (OFF)
(V)
hFE - IC
-3000 -3
VCE (sat) - IC
Collector-emitter saturation voltage VCE (sat) (V)
-1000
-1 -0.5 -0.3
DC current gain hFE
-500 -300
Ta = 100C
25 -100 -50 -30 Common emitter VCE = -5 V -10 -0.1 -0.3 -1 -3 -10 -30 -100 -25
-0.1 -0.05 -0.03
Ta = 100C
-25
25 Common emitter IC/IB = 20
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
Collector current IC
(mA)
Collector current
IC
(mA)
3
2007-11-01
HN7G02FU
Q2 (MOS-FET) (a) Switching time test circuit 2.5 V IN 50 0 10 S VIN RL ID OUT VDD = 3 V D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common source Ta = 25C 2.5 V (b) VIN VGS 0 VDD (c) VOUT VDS VDS (ON) ton 90% tr toff tf 90% 10% 10%
VDD
ID - VDS
60 Common source Ta = 25C 50 2.5 2.2 1.0 2.5 1.2 1.2
ID - VDS ()
Common source 1.1 Ta = 25C
Drain current ID (mA)
40
Drain current ID (mA)
2.0
0.8 1.05 0.6
30
1.8
20
1.6 VGS = 1.4 V 1.2
0.4
VGS = 1.0 V 0.95 0.9 0.8
10
0.2
0 0
2
4
6
8
10
12
0 0
0.1
0.2
0.3
0.4
0.5
0.6
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
IDR - VDS
50 30 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0 S G Common source VGS = 0 Ta = 25C 50 30 10
ID - VGS
Common source VDS = 3 V
(mA)
Drain current ID (mA)
D
5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0
Ta = 100C
IDR
IDR
25 -25
-0.2 -0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
1
2
3
4
5
Drain-source voltage
VDS (V)
Gate-source voltage
VGS (V)
4
2007-11-01
HN7G02FU
Yfs - ID
100 100 Common source VDS = 3 V 50 30 Ta = 25C 50 30
C - VDS
Common source VGS = 0 V f = 1 MHz Ta = 25C
Forward transfer admittance Yfs
(mS)
(pF) Capacitance C
10 5 3 Ciss Coss Crss 1 0.5 0.3 0.1
10
5 3 0.5
1
3
5
10
30
50
100
0.3
0.5
1
3
5
10
20
Drain current ID (mA)
Drain-source voltage
VDS (V)
VDS (ON) - ID
3000 Common source 1000 VGS = 2.5 V 1000 Ta = 25C 500 300
t - ID
Drain-source ON resistance VDS (ON) (mV)
Switching time t (ns)
toff tf 100 ton tr ID 2.5 V 0 VIN 10 s 50 VOUT RL VDD = 3 V 10 3 D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common source Ta = 25C 30 100
100 50 30
10 5 0.5 1 3 5 10 30 50 100 10 0.3
1
Drain current ID (mA)
Drain current ID (mA)
PD - Ta
200
(mW) Power Dissipation PD
150 100 50
0 0
20
40
60
80
100
120
140
160
Ambient temperature Ta (C)
5
2007-11-01
HN7G02FU
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01

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