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 Bulletin I27294 12/06
IRKDS201/045P
SCHOTTKY RECTIFIER
Description/ Features
The IRKDS201.. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, free-wheeling diodes, welding, and reverse battery protection. 175C TJ operation Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability UL pending TOTALLY LEAD-FREE, RoHS Compliant
(3) (1)
100 Amp
~
+
(2)
Mechanical Description
The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules.
Major Ratings and Characteristics Characteristics
IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 s sine VF TJ @ 100Apk, TJ=125C range
Values
100 45 8600 0.65 - 55 to 175
Units
A V A V C Outline TO-240AA
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1
IRKDS201/ 045P
Bulletin I27295 12/06
Voltage Ratings
Parameters
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
IRKDS201/045P
45
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current IFSM EAS IAR Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current (Per Leg) Per Module Per Leg
Values
200 100 8600 1850 270 20
Units
A
Conditions
50% duty cycle @ TC = 120 C, rectangular wave form 5s Sine or 3s Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied
Max. Peak One Cycle Non-Repetitive
A mJ A
TJ = 25 C, IAS = 24 Amps, L = 1mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop (1)
Values Units
0.7 0.92 0.65 0.86 V V V V mA mA pF nH V @ 100A @ 200A @ 100A @ 200A TJ = 25 C
Conditions
TJ = 25 C TJ = 125 C VR = rated VR
IRM CT LS
VINS
Max. Reverse Leakage Current (1) Max. Junction Capacitance Typical Series Inductance RMS isolation voltage (1 sec)
10 90 5200 7.0 10000 3500
TJ = 125 C
VR = 5VDC (test signal range 100Khz to 1Mhz) 25C From top of terminal hole to mounting plane 50 Hz, circuit to base, all terminals shorted
(1) Pulse Width < 500s
dv/dt Max. Voltage Rate of Change
V/ s (Rated VR)
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range
Values
-55 to 175 -55 to 175 0.6 0.1
Units
C C
Conditions
RthJC Max. Thermal Resistance, Junction to Case (Per Leg) RthCS Max. Thermal Resistance, case to Heatsink wt T Approximate Weight Mounting Torque 10% Case Style to heatsink busbar
C/W DC operation C/W Mounting Surface, smooth and greased
110 (4) gr (oz) 5 Nm 4 TO - 240AA JEDEC
2
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IRKDS201/ 045P
Bulletin I27294 12/06
1000
Reverse Current - IR (mA)
1000 175C 100 125C 10 1 0.1 0.01 0.001 5 10 15 20 25 30 35 40 45
Tj = 175C
Instantaneous Forward Current - IF (A)
25C
100
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
10000
10
Tj = 125C
Junction Capacitance - CT (pF)
Tj = 25C
Tj = 25C
1 0.0 0.5 1.0 1.5 2.0 2.5
Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics
1
1000 0 10 20 30 40 50
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
Thermal Impedance ZthJC (C/W)
D = 0.75 D = 0.5 D = 0.33 D = 0.25 0.1 D = 0.2 Single Pulse (Thermal Resistance)
0.01 1E-05
1E-04
1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
1E+01
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3
IRKDS201/ 045P
Bulletin I27295 12/06
180
Allowable Case Temperature (C) Average Power Loss - (Watts)
100
Square wave (D=0.50) 80% rated Vr applied
160 140 120 100 80 60 40 20 0 0 50 100
see note (2)
80 60 40 20 0
180 120 90 60 30
DC
DC
RMS Limit
150
200
250
300
0
30
60
90
120
150
Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
Non-Repetitive Surge Current - IFSM (A)
10000
Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics
At Any Rated Load Condition And With Rated Vrrm Applied Following Surge
1000 10 100 1000 10000
Square Wave Pulse Duration - tp (microsec) Fig. 7 - Max. Non-Repetitive Surge Current
L HIGH-S PEED S CH WIT FREE-WHEEL DIODE 40HF L40S 02
+
DUT
IR P460 F R = 25 ohm g
Vd = 25 Volt
CURR ENT MONIT OR
Fig. 8 - Unclamped Inductive Test Circuit
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
4
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IRKDS201/ 045P
Bulletin I27294 12/06
Outline Table
Dimensions are in millimeters and [inches]
Ordering Information Table
Device Code
IR
1 1 2 3 4 5 6 7
KD
2 -
S
3
20
4
1
5
/
045
6
P
7
International Rectifier Circuit Configuration KC = Add-A-Pak - 2 diodes in Series S = Schottky Diode Average Rating (x10) Product Silicon Identification Voltage Rating (045 = 45V) Lead-Free
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5
IRKDS201/ 045P
Bulletin I27295 12/06
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/06
6
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