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PHOTODIODE
Si PIN photodiode
S5971, S5972, S5973 series
High-speed photodiodes (S5973 series: 1.5 GHz)
S5971, S5972 and S5973 series are high-speed Si PIN photodiodes designed for visible to near infrared light detection. These photodiodes provide wideband characteristics at a low bias, making them suitable for optical communications and other high-speed photometry. S5973 series includes a mini-lens type (S5973-01) that can be efficiently coupled to an optical fiber and a violet sensitivity enhanced type (S5973-02) ideal for violet laser detection.
Features
S5971 : 100 MHz (VR=10 V) S5972 : 500 MHz (VR=10 V) S5973 series: 1 GHz (VR=3.3 V) l Low price l High sensitivity S5973-02: 0.3 A/W, QE=91 % (=410 nm) l High reliability
Applications
l High-speed response
l Optical fiber communications l High-speed photometry l Violet laser detection (S5973-02)
s General ratings / Absolute maximum ratings
Dimensional outline/ Window material *1 /K TO-18 /L /K 0.4 0.12 Package (mm) Active area size (mm) 1.2 0.8 Effective active area (mm2) 1.1 0.5 Reverse voltage VR Max. (V) Absolute maximum ratings Power Operating Storage dissipation te m p erature te m p erature Topr Tstg P (mW) (C) (C)
Type No.
S5971 S5972 S5973 S5973-01 S5973-02
20
50
-40 to +100 -55 to +125
s Electrical and optical characteristics
S p ectral Peak response sensitivity range wavelength p (nm) 320 to 1060 (nm) 900 0.64 0.55 Photo sensitivity S (A/W) p 660 nm 780 nm Temp. Short coefficient Cut-off Terminal circuit Dark of current frequency capacitance current fc Ct ID Isc ID TCID f=1 MHz 830 100 lx nm Typ. Max. (pF) (A) (nA) (nA) (ti mes/ C) (GHz) 0.6 1.0 0.07 * 3 1 *3 1.15 0.1 *3 0.5 *3 1.5 *4 1.6 *4 3 *3 NEP VR=10 V =p
Type No.
(W/Hz1/2) 7.4 x 10-15 3.1 x 10-15 1.1 x 10-15 *4 1.9 x 10 -15 * 2, * 4
S5971
S5972 800 0.57 0.44 0.55 0.42 0.01 * 3 0.5 *3 S5973 0.09 320 to 0.52 0.51 0.47 1000 S5973-01 760 0.42 0.001 * 4 0.1 *4 2 S5973-02 0.45 0.3 * 0.42 0.37 0.09 *1: Window material K: borosilicate glass, L: lens type borosilicate glass *2: =410 nm *3: VR=10 V *4: VR=3.3 V
1
Si PIN photodiode
s Spectral response
0.7 0.6
S5971, S5972, S5973 series
s Photo sensitivity temperature characteristics
(Typ. Ta=25 C)
+1.5
(Typ.)
TEMPERATURE COEFFICIENT (%/C)
S5971
S5971 +1.0 S5972 S5973 SERIES +0.5
PHOTO SENSITIVITY (A/W)
0.5 0.4 S5973-02
S5972
0.3 0.2 0.1 0 200
S5973/-01
0
400
600
800
1000
-0.5 200
400
600
800
1000
WAVELENGTH (nm)
WAVELENGTH (nm)
KPINB0157EA KPINB0158EA
s Frequency response
(Typ. Ta=25 C, =830 nm, RL=50 )
s Cut-off frequency vs. reverse voltage
(Typ. Ta=25 C, =830 nm, RL=50 )
+10
10 GHz
S5973 SERIES
RELATIVE OUTPUT (dB)
0 -3 S5971 (VR=10 V) -10 S5972 (VR=10 V)
CUT-OFF FREQUENCY
S5973 SERIES (VR=3.3 V)
1 GHz S5972
100 MHz
S5971
-20 1 MHz
10 MHz 10 MHz 100 MHz 1 GHz 10 GHz 1 10 100
FREQUENCY
REVERSE VOLTAGE (V)
KPINB0159EB
KPINB0160EB
2
Si PIN photodiode
s Dark current vs. reverse voltage
(Typ. Ta=25 C) 100 pA
S5971, S5972, S5973 series
s Terminal capacitance vs. reverse voltage
(Typ. Ta=25 C, f=1 MHz) 100 pF
S5971
10 pA
TERMINAL CAPACITANCE
DARK CURRENT
S5971 10 pF S5972
S5972
1 pA S5973 SERIES
S5973 SERIES 100 fA 0.1 1 10 100 1 pF 0.1 1 10 100
REVERSE VOLTAGE (V)
KPINB0161EA
REVERSE VOLTAGE (V)
KPINB0162EA
s Fiber coupling characteristics (S5973-01) X, Y direction
(Typ. Ta=25 C, =780 nm, NA=0.2)
Z direction
(Typ. Ta=25 C, =780 nm, NA=0.2)
0.6
0.6
FIBER-COUPLED SENSITIVITY (A/W)
0.5
FIBER-COUPLED SENSITIVITY (A/W)
0.5
0.4
0.4 OPTICAL FIBER (CORE DIAMETER: 50 m) Y 0.2 XZ LIGHT SOURCE =780 nm LD X, Y= 0 mm
0.3 OPTICAL FIBER (CORE DIAMETER: 50 m) Y XZ 0.1 LIGHT SOURCE=780 nm LD Z=0.5 mm
0.3
0.2
0.1
0 -0.8
-0.4
0
+0.4
+0.8
0 0.2
0.5
1
2
5
10
20
SHIFT FROM LENS CENTER X, Y (mm)
DISTANCE BETWEEN LENS AND FIBER END Z (mm)
KPINB0088EA
KPINB0089EA
3
Si PIN photodiode
s Dimensional outlines (unit: mm) S5971, S5972, S5973
WINDOW 3.0 0.2 5.4 0.2
3.6 0.2
S5971, S5972, S5973 series
S5973-01
3.75 0.2 13.5
2.54 0.2
2.54 0.2
4.7 0.1
WINDOW 1.5 LENS
5.4 0.2 4.6 0.1
PHOTOSENSITIVE SURFACE 0.45 LEAD
2.8
PHOTOSENSITIVE SURFACE 0.45 LEAD
CASE
13
CASE
KPINA0022EB
2.8
0.65 0.15
KPINA0023EA
S5973-02
WINDOW 2.0 MIN. 5.4 0.2
4.0 0.2 2.8
4.6 0.1
PHOTOSENSITIVE SURFACE 0.45 LEAD
2.54 0.2
CASE
13
KPINA0061EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KPIN1025E05 Aug. 2006 DN

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