![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
ESAB82-004 (5A) SCHOTTKY BARRIER DIODE 10+0.5 0 2.70.1 (40V / 5A ) Outline drawings, mm O3.60.2 4.50.2 0 14 -0.5 1.2 3.70.2 150.2 6.40.2 0.4 0.8 2.54 5.08 2.7 Features Low VF Super high speed switching High reliability by planer design JEDEC EIAJ TO-220AB SC-46 Connection diagram Applications High speed power switching h arc m Maximum ratings and characteristics on . Absolute maximum ratings te ole esign Symbol Conditions Item Rating Unit obs w d be ne d VRRM 40 Repetitive peak reverse voltage V ule d for dn e h VRSM sc tw=500ns, duty=1/40 48 Non-repetitive peak reverse voltage me V s t i ecom wave, duty=1/2 c du Io t r Square 5.0* Average output current A Tc=126C pro No is Sine wave IFSM Surge current Th 100 A 10ms Operating junction temperature Storage temperature Tj Tstg -40 to +150 -40 to +150 C C 1 2 3 0 20 7. * Average forward current of centertap full wave connection Electrical characteristics (Ta=25C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=2.0A VR=VRRM Junction to case Max. 0.55 5.0 5.0 Unit V mA C/W (40V / 5A ) Characteristics Forward Characteristic (typ.) ESAB82-004 (5A) Reverse Characteristic (typ.) Tj=150C 10 10 1 Tj=125C Forward Current (A) Reverse Current (mA) 10 0 Tj=100C Tj=150C Tj=125C Tj=100C Tj=25C 1 10 -1 IF IR 10 -2 Tj=25C 0.1 0.0 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -3 0 10 20 30 40 50 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 3.5 2.0 Io 360 360 VR Reverse Power Dissipation DC 3.0 Forward Power Dissipation 2.5 2.0 Square wave =160C Sine wave =180C DC Square wave =120C 1.5 Square wave =180C 1.0 0.5 0.0 0.0 0.5 Io Th 160 150 arc m on . te ole esign obs w d e d b or ne le du nd f e sch me is ct recom odu ot r N is p 1.5 Reverse Power Dissipation h 0 20 (W) (W) 7. 1.0 =180C 0.5 WF Per 1element 2.5 PR 0.0 1.0 1.5 2.0 3.0 0 10 20 30 40 50 Average Forward Current (A) VR Reverse Voltage (V) Current Derating (Io-Tc) 1000 Junction Capacitance Characteristic (typ.) (C) DC 130 Sine wave =180C Square wave =180C Square wave =120C 120 Junction Capacitance (pF) CJ 8 140 Case Temperature 100 110 360 Io VR=30V Square wave =60C TC 100 90 80 0 1 10 2 3 4 5 6 7 10 100 IO Average Output Current (A) VR Reverse Voltage (V) :Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection (40V / 5A ) Surge Capability 1000 ESAB82-004 (5A) Peak Half - Wave Current IFSM (A) 100 10 1 10 100 Number of Cycles at 50Hz Transient Thermal Impedance 10 2 10 1 10 0 10 -1 10 -3 Th arc m on . te ole esign obs w d e d b or ne le du nd f e sch me is ct recom odu ot r N is p 10 -2 Transient Thermal Impedance h 0 20 7. (C/W) 10 -1 10 0 10 1 10 2 t Time (sec.) |
Price & Availability of ESAB82-00401
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |