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POSITION SENSITIVE PHOTOMULTIPLIER TUBES
R8900-00-C12, R8900U-00-C12
FEATURES
I 6 (X) + 6 (Y) Cross Plate Anode I High Spatial Resolution I Wide Effective Area
APPLICATIONS
I Animal PET (Positron Emission Tomography) I Compact Gamma Camera I Scintillation Mammography
Left: R8900-00-C12, Right: R8900U-00-C12
GENERAL
Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Effective Area Material Window Thickness Structure Dynode Number of Stages Anode Weight Suitable Socket Operating Ambient Temperature Storage Temperature Description / Value 300 to 650 420 Bialkali 23.5 x 23.5 Borosilicate glass 0.8 Metal channel dynode 11 6 (X) + 6 (Y) Cross plate anode Approx. 28 (U Type: Approx. 38) E678-32B (sold separately) -80 to +50 (U Type: -30 to +50) -80 to +50 (U Type: -30 to +50) Unit nm nm -- mm -- mm -- -- -- g -- C C
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter Supply Voltage Between Anode and Cathode Average Anode Current in Total Value 1000 0.1 Min. 50 -- 7.5 15 -- -- -- -- -- Typ. 85 25 10 60 0.7 x 106 2 2.2 11.9 0.75 Max. -- -- -- -- -- 10 -- -- -- Unit V mA Unit A/lm % -- A/lm -- nA ns ns ns
CHARACTERISTICS (at 25 C)
Cathode Sensitivity Parameter Luminous (2856 K) Quantum Efficiency at 420 nm Blue Sensitivity Index (CS 5-58) Luminous (2856 K)
Anode Sensitivity Gain Anode Dark Current in Total of Anodes (after 30 min storage in darkness) Anode Pulse Rise Time Electron Transit Time Time Response Transit Time Spread (FWHM)
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes Ratio K 0.5 G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 P 1 1 1 1 0.5 1.5 2 1 1 1 1 1
Supply Voltage: 800 V, K: Cathode, G: Grid, Dy: Dynode, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K.
POSITION SENSITIVE PHOTOMULTIPLIER TUBES R8900-00-C12, R8900U-00-C12
Figure 1: Typical Spectral Response
100
TPMHB0670EB
Figure 2: Typical Gain and Anode Dark Current
108
TPMHB0671EC
10-4
CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%)
CATHODE RADIANT SENSITIVITY
107 GAIN 106
10-5
10-6
1
GAIN
QUANTUM EFFICIENCY
105
10-7
104 ANODE DARK CURRENT IN TOTAL OF ANODES 103 0.1 102
10-8
10-9
10-10
0.01 200
300
400
500
600
700
800
101 400
500
600
700
800
10-11 900 1000
WAVELENGTH (nm)
SUPPLY VOLTAGE (V)
Figure 3: Spatial Resolution X-Axis
100
TPMHB0761EA
Y-Axis
100
TPMHB0762EA
RELATIVE OUTPUT (%)
RELATIVE OUTPUT (%)
80 PX6 60 PX5 PX4 PX3 PX2 PX1
80 PY6 60 PY5 PY4 PY3 PY2 PY1
40
40
20
20
0
0 0 5 10 15 20 25 30
0
5
10
15
20
25
ANODE DARK CURRENT (A)
30
10
POSITION (mm)
SUPPLY VOLTAGE : -800 V LIGHT SOURCE : TUNGSTEN LAMP SPOT DIAMETER : 1 mm * Output of each anode under a light spot scanning at a center.
POSITION (mm)
SUPPLY VOLTAGE : -800 V LIGHT SOURCE : TUNGSTEN LAMP SPOT DIAMETER : 1 mm
Figure 4: Position Response Using PX/PY Anodes
1.5
TPMHB0763EA
1
PX6 (PY6)
CALCULATED POSITION
0.5
0
-0.5
PX1 (PY1) PX-ANODES PY-ANODES
-1
-1.5 -15
-10
-5
0
5
10
15
INCIDENT POSITION (mm)
SUPPLY VOLTAGE: -800 V LIGHT SOURCE : TUNGSTEN LAMP WAVELENGTH: 400 nm SPOT DIAMETER: 1 mm SCAN PITCH : 1 mm
Figure 5: Positioning Histogram Example
TPMHB0764EA
row 1 (PX1)
Positioning histogram profile for row 5 (left: column 1)
TPMHB0765EA
row 10 (PX6) column 1 (PY6) column 10 (PY1)
Positioning histogram of a 10 x 10 array of 2 mm x 2 mm x 20 mm BGO elements for 511 keV -rays.
Positioning histogram profile for column 5 (left: row 10)
Figure 6: R8900-00-C12 Dimensional Outline and Basing Diagram (Unit: mm) Basing Diagram
27.2 0.5 23.5 25.5 0.5 0.8 26.2 - 0.5 7.0 0.5 5 MAX. 5 MAX. GUIDE MARK 45 10 2.54 25.7 0.4 2.54 PITCH K Dy2 Dy4 Dy6 34- 1.5 10.16 Dy8 Dy10 BOTTOM VIEW CUT (IC) 123456789 10 32 31 11 12 30 29 13 28 14 CUT CUT (IC) (IC) 27 15 26 16 33 34 25 24 23 22 21 20 19 18 17 PX1 PX2 PX3 PY1 PX4 PX5 PX6 G CUT (IC) Dy1 Dy3 Dy5 Dy7 Dy9 Dy11 CUT (IC)
+0
4-R3
PHOTOCATHODE
1.2 MAX. 2.5 MAX.
TOP VIEW
SIDE VIEW
25- 0.45
CUT PY6 PY5 PY4 CUT PY3 PY2 CUT CUT K : Photocathode (IC) (IC) (IC) (IC) Dy : Dynode (Dy1-Dy11) P : Anode (PX1-PX6) BOTTOM VIEW (PY1-PY6) Basing Diagram G : Grid IC : Internal Connection (Do not use)
TPMHA0523EA
Figure 7: R8900U-00-C12 Dimensional Outline and Basing Diagram (Unit: mm) (R8900-00-C12 with an Insulation Cover) Basing Diagram
29.0 0.5 4-R1 23.5 0.6 0.4 30.0 0.5 26.2 -0.5 4 MAX. 4.4 0.7 12.0 0.5 GUIDE CORNER 2.54 PITCH K Dy2 Dy4 25- 0.45 Dy6 Dy8 BOTTOM VIEW Dy10 CUT CUT K : Photocathode Dy : Dynode (Dy1-Dy11) P : Anode (PX1-PX6) (PY1-PY6) G : Grid PY6 PY5 PY4 CUT PY3 PY2 CUT BOTTOM VIEW Basing Diagram 123456789 10 32 31 11 12 30 29 13 28 14 27 15 26 16 25 24 23 22 21 20 19 18 17 PX1 PX2 PX3 PY1 PX4 PX5 PX6 CUT G CUT Dy1 Dy3 Dy5 Dy7 Dy9 Dy11 CUT
4-R3
PHOTOCATHODE
+0
INSULATION COVER SIDE VIEW
TOP VIEW
TPMHA0524EC
POSITION SENSITIVE PHOTOMULTIPLIER TUBES R8900-00-C12, R8900U-00-C12
[ACCESSORIES] (Unit: mm) G Socket E678-32B SOLD SEPARATELY
22.86 20.32 2.54 4.45 2.92 PIN No. 1 25.4 0.5
G D Type Socket Assembly E7514 SOLD SEPARATELY
25.4 0.5 PX6 PY6 PX5 PY5 PX4 15.0 0.5 SIGNAL GND
16 24
PX6 PY6 PX5 PY5 PX4 PY4 SIGNAL OUTPUT : 0.8D-QEV (GRAY) PX3 PY3 PX2 PY2 PX1 PY1 R18 R14 C3 C2 C1
15 23
14 22
22.86
20.32
12.7
0.51
POM HOUSING
PY4 PX3 PY3 PX2 PY2
12 20 11 19 10 13
12.7
1.57 450
TACCA0094ED
PX1 PY1 DY11 DY10 DY9 DY8
8
R17 R13
27
R16 R12
7
R11
28
PX2 PX1 -H.V : RG-174/U (RED) POTTING COMPOUND
PY1 PX4 PX5 PX3 PX6 PY2 PY3 PY4 PY5 PY6
R10 DY7 DY6 DY5 DY4 DY3 DY2
6
R9
29
R8
5
R1, R14: 110 k R2: 330 k R3 to R13: 220 k R15: 1 M R16 to R18: 51 C1 to C3: 10 nF
R7
30
R6
4
GUIDE MARK
R5
31
R4 R3 DY1 G K
3
R2
1
R15
32
R1
-H.V : RG-174/U (RED) POWER SUPPLY GND
In case of using PMT with E7514, PMT must be operated within 0 C to 50 C (Storage temperature for E7514 only: -15 C to +60 C)
TACCA0236EB
WARNING ~ High Voltage ~
The product is operated at high voltage potential. Further, the metal housing of the product is connected to the photocathode (potential) so that it becomes a high voltage potential when the product is operated at a negative high voltage (anode grounded). Accordingly, extreme safety care must be taken for the electrical shock hazard to the operator or the damage to the other instruments.
* PATENT: USA: 5410211 and other(9), GBR: 551767 and other(9), DEU: 69209809 and other(9), FRA: 551767 and other(9), JPN: 3078905 and other(9)
WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se TPMH1299E01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it
OCT. 2006 IP

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