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2MBI300N-060-04
600V / 300A 2 in one-package
Features
* VCE(sat) classified for easy parallel connection * High speed switching * Voltage drive * Low inductance module structure
IGBT Module
Applications
* Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines
Equivalent Circuit Schematic
C2E1
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous current 1ms 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *1 Terminals *1 Rating 600 20 300 600 300 600 1100 +150 -40 to +125 AC 2500 (1min.) 3.5 3.5 Unit V V A A A A W C C V N*m N*m
C1
E2
G1
E1 G2 Current control circuit
E2
VCE(sat) classification
Rank F A B C D Lenge 1.85 2.00 2.15 2.30 2.50
*1 : Recommendable value : 2.5 to 3.5 N*m(M5)
Electrical characteristics (at Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbol
No
ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr
t
eco r
Characteristics Min. Typ. - - 4.5 - - - - - - - - - -
me m
- - - - 19800 4400 2000 0.6 0.2 0.6 0.2 - -
df n
Max. 2.0 30 7.5 2.8 - - - 1.2 0.6 1.0 0.35 3.0 0.3
o
ne r
de w
to 2.10V to 2.25V to 2.40V to 2.60V to 2.80V
n sig
Conditions Ic = 300A VGE = 15V Tj = 25C
.
Conditions VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=300mA VGE=15V, IC=300A VGE=0V VCE=10V f=1MHz VCC=300V IC=300A VGE=15V RG=6.8ohm IF=300A, VGE=0V IF=300A
Unit mA A V V pF
s
V s
Thermal resistance characteristics
Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. - - - - - 0.025 Conditions Max. 0.11 0.24 - IGBT Diode the base to cooling fin C/W C/W C/W Unit
Thermal resistance
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI300N-060-04
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage Tj=25C 700 700
IGBT Module
Collector current vs. Collector-Emitter voltage Tj=125C
600
600
Collector current : Ic [A]
400
Collector current : Ic [A] 0 1 2 3 4 5
500
500
400
300
300
200
200
100
100
0 Collector-Emitter voltage : VCE [V]
0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage Tj=25C
Collector-Emitter vs. Gate-Emitter voltage Tj=125C
10 VCE [V] VCE [V]
10
8
8
Collector-Emitter voltage :
6
Collector-Emitter voltage :
6
4
2
0 0 5
Gate-Emitter voltage : VGE [V]
No
10
t
com re
15 20
me
25
df n
4 2 0
o
ne r
5
de w
n sig
.
0
10
15
20
25
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current Vcc=300V, RG=6.8 ohm, VGE=15V, Tj=25C
Switching time vs. Collector current Vcc=300V, RG=6.8 ohm, VGE=15V, Tj=125C
1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.]
1000
100
100
10 0 100 200 300 400 500 Collector current : Ic [A]
10 0 100 200 300 400 500 Collector current : Ic [A]
2MBI300N-060-04
IGBT Module
Switching time vs. RG Vcc=300V, Ic=300A, VGE=15V, Tj=25C 500
Dynamic input characteristics Tj=25C 25
Switching time : ton, tr, toff, tf [n sec.]
1000 Collector-Emitter voltage : VCE [V]
400
20
300
15
100
200
10
100
5
10 1 2 Gate resistance : RG [ohm] 10 20
0 0 500 1000 Gate charge : Qg [nC] 1500
0
Forward current vs. Forward voltage VGE=0V 500 700
Reverse recovery characteristics trr, Irr, vs. IF
Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.]
600
Forward current : IF [A]
500
400
100
300
200
100
0 0 1
Forward voltage : VF [V]
No
2
t
eco r
3
me m
4
df n
50 0
o
ne r
100
de w
n sig
.
200
300
400
500
Forward current : IF [A]
Transient thermal resistance 3000
Reversed biased safe operating area > +VGE=15V, -VGE < 15V, Tj < 125C, RG = 6.8 ohm = =
Thermal resistance : Rth (j-c) [C/W]
2500
Collector current : Ic [A]
0.1
2000
1500
1000
0.01
500
0 0.001 0.01 0.1 1 0 100 Pulse width : PW [sec.] 200 300 400 500 Collector-Emitter voltage : VCE [V] 600
Gate-Emitter voltage : VGE [V]
2MBI300N-060-04
IGBT Module
Switching loss vs. Collector current Vcc=300V, RG=6.8 ohm, VGE=15V 30 100
Capacitance vs. Collector-Emitter voltage Tj=25C
Switching loss : Eon, Eoff, Err [mJ/cycle]
20
Capacitance : Cies, Coes, Cres [nF]
25
10
15
10
5
1
0 0 100 200 300 400 500 0 5 10 15 20 25 30 35 Collector current : Ic [A] Collector-Emitter voltage : VCE [V]
Outline Drawings, mm
No
t
eco r
me m
df n
o
ne r
de w
n sig
.

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