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| 2SK2644-01 Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=35V Guarantee Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIS SERIES Outline Drawings TO-3P Applications Switching regulators UPS DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Repetitive or non-repetitive Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol VDS ID ID[puls] VGS IAV EAV PD Tch Tstg Rating 500 18 72 35 18 518.5 125 +150 -55 to +150 Unit V A A V A mJ W C C Remarks Drain(D) Equivalent circuit schematic Gate(G) Rch <150C = Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=35V VDS=0V ID=9A VGS=10V ID=9A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V RG=10 ID=18A VGS=10V L=2.93mH Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Min. 500 3.5 Tch=25C Tch=125C Typ. Max. Units V V A mA nA S 4.0 4.5 10 500 0.2 1.0 10 100 0.38 0.45 5.5 11 1700 2600 280 420 120 180 20 30 100 150 110 165 65 100 18 1.1 1.65 620 9.0 pF ns A V ns C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Min. Typ. Max. 1.0 35.0 Units C/W C/W 1 FUJI POWER MOSFET Characteristics 2SK2644-01 2 FUJI POWER MOSFET 2SK2644-01 3 FUJI POWER MOSFET 2SK2644-01 4 |
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