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| LS4448 /LS4148/LS914B Pb RoHS COMPLIANCE 500mW Hermetically Sealed Glass Fast Switching Diodes QUADRO MINI MELF Features Fast switching device (TRR< 4.0nS) Quadro Mini-MELF package Surface device type mounting Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and leads are readily solderable RoHS compliant Matte Tin (Sn) lead finish 1st band indicates cathode Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25oCambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Working Inverse Voltage Non-repetitive Peak Forward Current Average Rectified Current Peak Forward Surge Current Operating Junction Temperature Storage Temperature Range Symbol Pd WIV IFM Io IFSURGE TJ TSTG Symbol IR=100uA IR=5uA Value 500 75 450 150 2 175 -65 to + 200 Min 100 75 0.62 - Units mW V mA mA A O C O C Max Units V 0.72 1.0 1.0 25 5 Electrical Characteristics Type Number Breakdown Voltage Forward Voltage LS4448, LS914B IF=5.0mA LS4148 IF= 10mA LS4448, LS914B IF =100mA Reverse Leakage Current VR=20V VR=75V Junction Capacitance VR=0, f=1.0MHz BV VF IR V nA uA pF nS 4.0 Cj Reverse Recovery Time (Note 1) 4.0 trr Notes: 1. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100, IRR=1mA Version: B07 RATINGS AND CHARACTERISTIC CURVES (LS4448/LS4148/LS914B) 1000 LS4148 IF - Forward Current (mA) 1000 100 Scattering Limit 10 IR- Reverse Current (nA) Tj = 25 C 100 Scattering Limit 10 1 Tj = 25 C 0 0.4 0.8 1.2 1.6 2.0 0.1 1 1 10 VR- Reverse Voltage (V) 100 VF - Forward Voltage (V) Figure 1. Forward Current vs. Forward Voltage Figure 3. Reverse Current vs. Reverse Voltage 1000 CD - Diode Capacitance (pF) LS4448 IF - Forward Current (mA) 3.0 2.5 2.0 1.5 1.0 0.5 0 2.0 0.1 1 10 100 VR - Reverse Voltage (V) f = 1 MHz Tj = 25 C 100 Scattering Limit 10 1 Tj = 25 C 0.1 0 0.4 0.8 1.2 1.6 VF - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage Figure 4. Diode Capacitance vs. Reverse Voltage Version: B07 |
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