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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP70N04MUG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP70N04MUG-S18-AY
Note
LEAD PLATING Pure Sn (Tin)
PACKING Tube 50 p/tube
PACKAGE TO-220 (MP-25K) typ. 1.9 g
Note Pb-free (This product does not contain Pb in the external electrode).
FEATURES
* Super low on-state resistance RDS(on) = 5.0 m MAX. (VGS = 10 V, ID = 35 A) * Channel temperature 175 degree rated
(TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
40 20 70 280 115 1.8 175 -55 to +175 37 137
V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Repetitive Avalanche Current Repetitive Avalanche Energy
Note2 Note2
IAR EAR
Notes 1. PW 10 s, Duty Cycle 1% 2. Tch 150C, VDD = 20 V, RG = 25 , VGS = 20 0 V, L = 100 H
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.30 83.3 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18664EJ3V0DS00 (3rd edition) Date Published November 2007 NS Printed in Japan
2007
The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
NP70N04MUG
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD
TEST CONDITIONS VDS = 40 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 35 A VGS = 10 V, ID = 35 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 35 A, VGS = 10 V, RG = 0
MIN.
TYP.
MAX. 1 100
UNIT
A
nA V S
2.0 25 49 4.0 4900 480 310 25 18 63 12
4.0
Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
5.0
m pF pF pF ns ns ns ns nC nC nC
VDD = 32 V, VGS = 10 V, ID = 70 A IF = 70 A, VGS = 0 V IF = 70 A, VGS = 0 V, di/dt = 100 A/s
90 21 31 0.96 37 42 1.5
VF(S-D) trr Qrr
V ns nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D18664EJ3V0DS
NP70N04MUG
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
140
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20 0 0 25 50 75 100 125 150 175
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
TC - Case Temperature - C

1000
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
100
R
(o DS
n)
(V
GS
d it e Lim V ) 0 i =1
ID(pulse)
PW =1
i
00
s
ID(DC) DC
w Po
y ar nd co Se
1i m
i
s
1i 0
10
ms
i
D er ip i ss io at
Br o kd ea
d it e im nL
1
TC = 25C Single pulse
wn d it e Lim
0.1 0.1 1 10 100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - C/W
10
Rth(ch-A) = 83.3C/Wi
1
Rth(ch-C) = 1.30C/Wi
0.1
Single pulse 0.01 100
1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D18664EJ3V0DS
3
NP70N04MUG
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
1000
300
ID - Drain Current - A
200
ID - Drain Current - A
100
10
Tch = -55C 25C 75C 150C 175C
100 VGS = 10 V Pulsed 0 0 0.5 1 1.5
VDS - Drain to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE
1 VDS = 10 V Pulsed 0.1 0 1 2 3 4 5 6
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S
VGS(th) - Gate to Source Threshold Voltage - V
4 3.5 3 2.5 2 1.5 1 0.5 0 -75 -25 25 75 125 175 225
Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
100 Tch = -55C 25C 75C 150C 175C 10
VDS = VGS ID = 250 A
VDS = 5 V Pulsed 1 0.1 1 10 100
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
8 VGS = 10 V Pulsed 6
RDS(on) - Drain to Source On-state Resistance - m
10 8 6 4 2 0 0 5 10 15 20 ID = 35 A Pulsed
4
2
0 1 10 100 1000
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D18664EJ3V0DS
NP70N04MUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
8 VGS = 10 V ID = 35 A 6
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
Ciss, Coss, Crss - Capacitance - pF
Coss 1000 Crss VGS = 0 V f = 1 MHz 100 0.01 0.1 1 10 100
4
2 Pulsed 0 -75 -25 25 75 125 175 225
Tch - Channel Temperature - C SWITCHING CHARACTERISTICS
1000 VDD = 20 V VGS = 10 V RG = 0 100 td(on) 10 tr td(off) tf
VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
VDS - Drain to Source Voltage - V
12 VDD = 32 V 20 V 8V
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
35 30 25 20 15 10 5 0
9
VGS
6
3 VDS ID = 70 A 0 20 40 60 80 0 100
1 0.1 1 10 100
ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
1000
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
100 VGS = 10 V 10 0V
100
10 di/dt = 100 A/s VGS = 0 V 1 0.1 1 10 100
1 Pulsed 0.1 0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet D18664EJ3V0DS
5
NP70N04MUG
PACKAGE DRAWING (Unit: mm)
TO-220 (MP-25K)
10.00.2
3.80.2
2.80.3
4.450.2 1.30.2
4 1 2 3
6.30.3
15.9 MAX. 3.10.2
0.50.2
13.70.3
1.270.2 0.80.1
2.50.2
2.54 TYP.
2.54 TYP. 1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18664EJ3V0DS
NP70N04MUG
MARKING INFORMATION
NEC 70N04 UG
Pb-free plating marking Abbreviation of part number Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP70N04MUG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method Wave soldering MP-25K
Soldering Conditions Maximum temperature (Solder temperature): 260C or below Time: 10 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Recommended Condition Symbol
THDWS
Partial heating MP-25K
Maximum temperature (Pin temperature): 350C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less P350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D18664EJ3V0DS
7
NP70N04MUG
* The information in this document is current as of November, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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