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| SK45GB063 Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP(R) 2 Inverse Diode IGBT Module SK45GB063 SK45GAL063 SK45GAR063 Preliminary Data Freewheeling Diode Features Module Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GB GAL GAR 1 12-04-2007 SCT (c) by SEMIKRON SK45GB063 Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP(R) 2 IGBT Module SK45GB063 SK45GAL063 SK45GAR063 Preliminary Data Freewheeling Diode Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications GB GAL GAR 2 12-04-2007 SCT (c) by SEMIKRON SK45GB063 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 12-04-2007 SCT (c) by SEMIKRON SK45GB063 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic FWD and APD typical forward characteristic 4 12-04-2007 SCT (c) by SEMIKRON SK45GB063 UL recognized file no. E 63 532 5 12-04-2007 SCT (c) by SEMIKRON |
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