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| 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN September 2007 - Rev 15-Sep-07 B1007-QT Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias 100% RF, DC and Output Power Testing General Description Mimix Broadband's two stage 4.0-11.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a +20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. The device is ideally suited as an LO or RF buffer stage with broadband performance at a very low cost. The device comes in an RoHS compliant 3x3mm QFN surface mount package offering excellent RF and thermal properties. This device is well suited for Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 180 mA +0.3 VDC +20.0 dBm -65 to +165 OC -55 to MTTF Graph1 MTTF Graph1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Noise Figure Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Drain Bias Voltage (Vd) Gate Bias Voltage (Vg) Supply Current (Id) (Vd=4.0V, Vg2=-0.5V Typical) Units GHz dB dB dB dB dB dB dBm dBm VDC VDC mA Min. 4.0 -1.0 Typ. 20.0 12.0 23.0 +/-1.5 65.0 4.5 +20.0 +21.0 +4.0 -0.5 90 Max. 11.0 +5.5 0.0 - Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN September 2007 - Rev 15-Sep-07 B1007-QT Buffer Amplifier Measurements XB1007-QT, Vd = 4V, Id = 100 mA: S11 vs Frequency 0 -5 -10 -15 S11 (dB) -20 -25 -30 -35 -40 2 3 4 5 6 7 8 9 10 11 12 13 14 Frequency (GHz) XB1007-QT, Vd = 4V, Id = 100 mA: Gain vs Frequency 30 25 20 S21 (dB) 15 10 5 0 2 3 4 5 6 7 8 9 10 11 12 13 14 Frequency (GHz) XB1007-QT, Vd = 4V, Id = 100 mA: S22 vs Frequency 0 -2 -4 -6 -8 S22 (dB) -10 -12 -14 -16 -18 -20 -22 -24 2 3 4 5 6 7 8 9 10 11 12 13 14 Frequency (GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN September 2007 - Rev 15-Sep-07 B1007-QT Buffer Amplifier Measurements (cont.) XB1007-QT, Vd = 4V, Id = 90 mA, Pin = -15dBm: OIP3 vs Frequency 35 35 30 30 25 OIP3 (dBm) OIP3 (dBm) 25 20 15 4 GHz 10 15 5 10 4 5 6 7 Frequency (GHz) 8 9 10 0 6 8 10 12 14 16 Gain (dB) 18 20 22 24 26 6 GHz 8 GHz 10 GHz XB1007-QT, Pin = -15dBm: OIP3 vs Gain 20 XB1007-QT, Pin = -15dBm: OIP3 vs Current 35 30 25 Noise Figure (dB) OIP3 (dBm) 20 15 10 5 0 0 20 40 60 80 100 120 140 Drain Current (mA) 4 GHz 6 GHz 8 GHz 10 GHz 10 9 8 7 6 5 4 3 2 1 0 4 5 XB1007-QT, Vd = 4V, Id = 100mA: Noise Figure over Temperature 25 C 50 C 75 C 6 7 8 9 10 11 12 13 14 15 16 Frequency (GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN September 2007 - Rev 15-Sep-07 B1007-QT Package Dimensions / Layout (Note: Engineering designator is 8MPA0811) Functional Block Diagram gnd 1 6 gnd 1 5 gnd 1 4 VD 1 3 Pin Designations 12 11 10 9 gnd RF Out gnd gnd Pin Number Pin Name Pin Function Nominal Value 1 GND Ground 2 RF In RF Input 3-4 GND Ground 5 VG Gate Bias -0.5V 6-10 GND Ground 11 RF Out RF Output 12 GND Ground 13 VD 4.5V, 130 mA Drain Bias 14-16 GND Ground gnd RF In gnd gnd 1 2 3 4 5 VG 6 gnd 7 gnd 8 gnd Page 4 of 6 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN September 2007 - Rev 15-Sep-07 B1007-QT App Note [1] Biasing - The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended to bias this device at Vd=4V with Id=90 mA. It is also recommended to use active biasing to control the drain currents because this gives the most reproducible results over temperature or RF level variations. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. MTTF Graphs 1.00E+09 These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. XB1007-QT Vd=4.0 V Id=130 mA 1.00E+04 XB1007-QT Vd=4.0 V Id=130 mA 1.00E+08 1.00E+03 MTTF (hours) 1.00E+07 FITS 1.00E+02 1.00E+06 1.00E+01 1.00E+05 55 65 75 85 95 105 115 125 Backplate Temperature (deg C) 1.00E+00 55 65 75 85 95 105 115 125 Backplate Temperature (deg C) XB1007-QT Vd=4.0 V Id=130 mA 172 170 168 166 164 220 210 200 190 XB1007-QT Vd=4.0 V Id=130 mA Rth (deg C/W) 158 156 154 152 150 148 146 144 142 140 55 65 75 85 95 105 115 125 Backplate Temperature (deg C) Tch (deg C) 162 160 180 170 160 150 140 130 120 55 65 75 85 95 105 115 125 Backplate Temperature (deg C) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN September 2007 - Rev 15-Sep-07 B1007-QT Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. |
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