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| 1MBI600UB-120 IGBT Module U-Series Features * High speed switching * Voltage drive * Low inductance module structure 1200V / 600A 1 in one-package Equivalent Circuit Schematic Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 1200 20 800 600 1600 1200 600 1200 3570 +150 -40 to +125 2500 4.5 11.0 1.7 Unit V V A Continuous Tc=25C Tc=80C 1ms Tc=25C Tc=80C 1ms 1 device Collector Power Dissipation Junction temperature Storage temperature AC:1min. Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 Terminals *2 *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 3.5 to 4.5N*m(M6), Terminal 10.0 to 11.0 N*m(M8), 1.3 to 1.7 N*m(M4) W C VAC N*m Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=600mA VGE=15V, IC=600A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC=600V IC=600A VGE=15V RG= 1.1 VGE=0V IF=600A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 4.5 6.5 - 1.95 - 2.20 - 1.75 - 2.00 - 67 - 0.36 - 0.21 - 0.03 - 0.37 - 0.07 - 1.80 - 1.90 - 1.60 - 1.70 - - - 0.30 Unit Max. 8.0 1600 8.5 2.30 - 2.10 - - 1.20 0.60 - 1.00 0.30 2.10 - 1.90 - 0.35 - mA nA V V Input capacitance Turn-on time nF s Turn-off time Forward on voltage V Reverse recovery time Lead resistance, terminal-chip*3 IF=600A s m *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.0063 Unit Max. 0.035 0.054 - C/W C/W C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 1MBI600UB-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 1400 1200 Collector current : Ic [A] 1000 800 10V 600 400 200 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] VGE=20 15V 12V 1400 1200 Collector current : Ic [A] 1000 800 600 400 200 0 0 1 2 3 VGE=20V 15V IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 12V 10V 8V 8V 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 1400 Tj=25C Collector - Emitter voltage : VCE [ V ] 1200 Collector current : Ic [A] 1000 Tj=125C 800 600 400 200 0 0 1 2 3 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 8 6 4 Ic=1200A Ic= 600A Ic= 300A 2 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 100.0 Capacitance : Cies, Coes, Cres [ nF ] Cies Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=600V, Ic=600A, Tj= 25C VGE 10.0 Cres Coes VCE 1.0 0 10 20 30 0 0 500 1000 1500 2000 2500 3000 3500 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 1MBI600UB-120 IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=1.1, Tj= 25C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=1.1, Tj=125C 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 0 200 400 600 800 1000 1200 Collector current : Ic [ A ] 10 0 200 400 600 800 1000 1200 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=600A, VGE=15V, Tj= 25C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 120 100 80 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=1.1 Eoff(125C) ton toff 1000 Eoff(25C) 60 40 20 0 Err(125C) Eon(125C) Err(25C) Eon(25C) tr 100 tf 10 0.1 1.0 10.0 100.0 0 200 400 600 800 1000 1200 Gate resistance : Rg [ ] Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=600A, VGE=15V, Tj= 125C 400 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 1.1 ,Tj <= 125C 1400 1200 Collector current : Ic [ A ] 300 Eon 1000 800 600 400 200 200 Eoff 100 Err 0 0.10 1.00 10.00 100.00 Gate resistance : Rg [ ] 0 0 400 800 1200 Collector - Emitter voltage : VCE [ V ] 1MBI600UB-120 Forward current vs. Forward on voltage (typ.) chip 1400 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 1200 Forward current : IF [ A ] Tj=25C 1000 800 600 400 200 0 0 1 2 3 4 Forward on voltage : VF [ V ] Tj=125C 1000 IGBT Module Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=1.1 Irr (125C) Irr (25C) trr (125C) trr (25C) 100 10 0 200 400 600 800 1000 1200 Forward current : IF [ A ] Transient thermal resistance (max.) 0.100 Thermal resistanse : Rth(j-c) [ C/W ] FWD IGBT 0.010 0.001 0.001 0.010 0.100 1.000 Pulse width : Pw [ sec ] Outline Drawings, mm M138 |
Price & Availability of 1MBI600UB-120
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