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| AP18P10GS RoHS-compliant Product Advanced Power Electronics Corp. Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic G P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -100V 160m -12A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. GD S TO-263(S) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -100 20 -12 -10 -48 35.7 0.29 2 Units V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 40 -9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.5 62 Units /W /W Data and specifications subject to change without notice 201018072-1/4 AP18P10GS Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance3 Test Conditions VGS=0V, ID=-1mA VGS=-10V, ID=-8A VGS=-4.5V, ID=-6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150oC) Min. -100 -1 - Typ. 8 16 4.4 8.7 9 14 45 40 110 70 8 Max. Units 160 200 -3 -1 -25 100 25.6 12 V m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=-250uA VDS= -10V, ID= -8A VDS=-100V, VGS=0V VDS=-80V, VGS=0V VGS= 20V ID=-8A VDS=-80V VGS=-4.5V VDS=-50V ID=-8A RG=3.3,VGS=-10V RD=6.25 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 3 1590 2550 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 3 3 Test Conditions IS=-12A, VGS=0V IS=-8A, VGS=0V, dI/dt=-100A/s Min. - Typ. 49 110 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25oC , VDD=-50V , L=1.0mH , RG=25. 3.Pulse test THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED. 2/4 AP18P10GS 40 20 T C = 25 C 30 o -10V -7.0V -5.0V -4.5V -ID , Drain Current (A) T C =150 o C 15 -10V -7.0V -5.0V -4.5V -ID , Drain Current (A) 20 10 V G = -3.0V 5 10 V G = -3.0 V 0 0 4 8 12 16 20 0 0 2 4 6 8 10 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 300 2.0 270 I D = -8 A T C =25 1.6 I D = - 12 A V G = -10V Normalized RDS(ON) 240 RDS(ON) (m ) 210 1.2 180 0.8 150 120 0.4 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 8 6 1.5 4 T j =150 o C T j =25 o C Normalized -VGS(th) (V) -IS(A) 1.0 2 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP18P10GS f=1.0MHz 15 10000 -VGS , Gate to Source Voltage (V) 12 V DS = - 80 V ID= -8A 9 C iss 1000 6 100 C (pF) C oss C rss 3 0 0 10 20 30 40 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 10 100us 0.2 0.1 -ID (A) 0.1 1ms 1 0.05 PDM t 0.02 T C =25 C Single Pulse 0 0.1 1 10 o 10ms 100ms DC T Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.01 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 15 V DS = -5V 12.5 T j =25 o C T j =150 o C VG QG -ID , Drain Current (A) 10 -4.5V QGS QGD 7.5 5 2.5 Charge 0 0 2 4 6 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 E SYMBOLS Millimeters MIN NOM MAX A A1 A2 4.25 0.00 2.20 0.70 1.07 0.30 1.15 8.30 9.70 2.04 ----4.50 ----- 4.75 0.15 2.45 0.90 1.27 0.45 1.30 8.90 10.10 2.54 1.50 4.90 1.50 5.20 0.30 2.70 1.10 1.47 0.60 1.45 9.40 10.50 3.04 ----5.30 ---- D b b1 c c1 L2 b1 L3 b D E e L2 L3 L4 e L4 A A2 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. c1 c A1 Part Marking Information & Packing : TO-263 Part Number Package Code XXXXXS 18P10GS meet Rohs requirement YWWSSS LOGO Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence |
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