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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant LD 242
Wesentliche Merkmale * Hergestellt im Schmelzepitaxieverfahren * Kathode galvanisch mit dem Gehauseboden verbunden * Hohe Zuverlassigkeit * Groer Offnungskegel * Gehausegleich mit BP 103, BPX 63, SFH 464, SFH 483 * Anwendungsklasse nach DIN 40 040 GQC Anwendungen * Lichtschranken fur Gleich- und Wechsellichtbetrieb * Sensorik * Lichtgitter Typ Type LD 242-2/3 LD 242 E7800
1)
Features * * * * * Fabricated in a liquid phase epitaxy process Cathode is electrically connected to the case High reliability Wide beam Same package as BP 103, BPX 63, SFH 464, SFH 483 * DIN humidity caregory in acc. with DIN 40 040 GQG Applications * Photointerrupters * Sensor technology * Light curtains
Bestellnummer Ordering Code Q62703Q4749 Q62703Q3509
Strahlstarkegruppierung 1) (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping 1) Ie (mW/sr) > 4.0 1 - 3.2
gemessen bei einem Raumwinkel = 0.01 sr measured at a solid angle of = 0.01 sr
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LD 242
Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlassstrom Forward current Stostrom, 10 s, D = 0 Surge current Verlustleistung Power dissipation Warmewiderstand Thermal resistance Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA, tp = 20 ms Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimension of the active chip area Abstand Chipoberflache bis Linsenscheitel Distance chip surface to lens top Symbol Symbol peak Wert Value 950 Einheit Unit nm Symbol Symbol Wert Value - 40 ... + 80 5 300 3 470 450 160 Einheit Unit C V mA A mW K/W K/W
Top; Tstg VR IF IFSM Ptot RthJA RthJC
55
nm
40 0.25 0.5 x 0.5 0.3 ... 0.7
Grad deg. mm2 mm mm
A LxB LxW H
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Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Kapazitat Capacitance VR = 0 V Durchlassspannung Forward voltage IF = 100 mA IF = 1 A, tp = 100 s Sperrstrom, VR = 5 V Reverse current Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von peak, IF = 100 mA Temperature coefficient of peak, IF = 100 mA Symbol Symbol Wert Value 1 Einheit Unit s
tr , tf
Co
40
pF
VF VF IR
e
1.3 ( 1.5) 1.9 ( 2.5) 0.01 ( 1) 16
V V A mW
TCI
- 0.55
%/K
TCV TC
- 1.5 0.3
mV/K nm/K
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LD 242
Gruppierung der Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Grouping of Radiant Intensity Ie in Axial Direction measured at a solid angle of = 0.01 sr Bezeichnung Parameter Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s
1)
Symbol LD 242-2
Werte Values LD 242-3 LD 242 78001)
Einheit Unit
Ie Ie typ.
4...8 50
> 6.3 75
1 ... 3.2 -
mW/sr mW/sr
Die Messung der Strahlstarke und des Halbwinkels erfolgt mit einer Lochblende vor dem Bauteil (Durchmesser der Lochblende: 1,1 mm; Abstand Lochblende zu Gehauseruckseite: 4,0 mm). Dadurch wird sichergestellt, dass bei der Strahlstarkemessung nur diejenige Strahlung in Achsrichtung bewertet wird, die direkt von der Chipoberflache austritt. Von der Bodenplatte reflektierte Strahlung (vagabundierende Strahlung) wird dagegen nicht bewertet. Diese Reflexionen sind besonders bei Abbildungen der Chipoberflache uber Zusatzoptiken storend (z.B. Lichtschranken groer Reichweite). In der Anwendung werden im allgemeinen diese Reflexionen ebenfalls durch Blenden unterdruckt. Durch dieses der Anwendung entsprechende Messverfahren ergibt sich fur die Anwender eine besser verwertbare Groe. Diese Lochblendenmessung ist gekennzeichnet durch den Eintrag E 7800", der an die Typenbezeichnung angehangt ist. An aperture is used in front of the component for measurement of the radiant intensity and the half angle (diameter of the aperture: 1.1 mm; distance of aperture to case back side: 4.0 mm). This ensures that solely the radiation in axial direction emitting directly from the chip surface will be evaluated during measurement of the radiant intensity. Radiation reflected by the bottom plate (stray radiation) will not be evaluated. These reflections impair the projection of the chip surface by additional optics (e.g. long-range light reflection switches). In respect of the application of the component, these reflections are generally suppressed by apertures as well. This measuring procedure corresponding with the application provides more useful values. This aperture measurement is denoted by "E 7800" added to the type designation.
1)
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LD 242
Relative Spectral Emission Irel = f ()
100 %
OHR01938
Radiant Intensity
Ie = f (IF) Ie 100 mA
OHR01037
Single pulse, tp = 20 s
e
10 2
Max. Permissible Forward Current IF = f (TA)
300
OHR00971
rel
e (100 mA)
F mA
250 R thJC = 160 K/W
80
10 1
60
200
150
40
R thJA = 450 K/W
10 0
20
100
50
10 -1 10 -2
0 880
920
960
1000
nm
1060
10 -1
10 0
A F
10 1
0
0
20
40
60
80 C 100 TA , T C
Forward Current IF = f (VE)
10 1 A
OHR01040
Permissible Pulse Handling Capability IF = f (), TC = 25 C, duty cycle D = parameter
F
10 4 mA 5 D=
OHR01937
F
tP tP T
F
T D= 0.005 0.01 0.02 0.05 0.1
10 0
typ.
max.
10 3 5
0.2 0.5
10 -1
DC
10 -2
1
1.5
2
2.5
3
3.5
4 V 4.5 VF
10 2 10 -5
10 -4
10 -3
10 -2
s
10 0
Radiation Characteristics Irel = f ()
40 30 20 10 0 1.0
OHR01877
50
0.8 60
0.6
70
0.4
80 90
0.2 0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
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LD 242
Mazeichnung Package Outlines
2.7 (0.106) o0.45 (0.018)
Chip position
o4.3 (0.169)
o4.1 (0.161)
( .1 1 1.1 (0
4 0.0 (
3)
0.9
3 0.0
5)
2.54 (0.100) spacing
1 2 14.5 (0.571) 12.5 (0.492)
0.9
(0
.03
.04
5)
3)
o5.5 (0.217) o5.2 (0.205)
GETY6625
3.6 (0.142) 3.0 (0.118)
Mae in mm (inch) / Dimensions in mm (inch).
Gehause Package Anschlussbelegung pin configuration
18 A3 DIN 41876 (TO-18), klares Epoxy-Gieharz 18 A3 DIN 41876 (TO-18), transparent epoxy resin 1 = Anode/ anode 2 = Kathode/ cathode
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Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering
(nach CECC 00802) (acc. to CECC 00802)
OHLY0598
300 C T 250 235 C ... 260 C
10 s
Normalkurve standard curve 2. Welle 2. wave Grenzkurven limit curves
200 1. Welle 1. wave 150 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling ca 200 K/s 5 K/s 2 K/s
0 0 50 100 150 t 200 s 250
Published by OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
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