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| MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES .119(3.00) .110(2.80) 60 Volts POWER 225 mW SOT- 23 Unit: inch (mm) Collector-emitter voltage VCE = -60V .056(1.40) Collector current IC = -600mA Pb free product are available : 99% Sn above can meet RoHS environment substance directive request .047(1.20) .007(.20)MIN PNP epitaxial silicon, planar design .103(2.60) .083(2.10) .066(1.70) .006(.15) .002(.05) .044(1.10) .006(.15)MAX Case: SOT-23 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.008 grams Device Marking : M7A .020(.50) .013(.35) ABSOLUTE MAXIMUM RATINGS Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol Value -60 -60 -5.0 -600 .035(0.90) MECHANICAL DATA Units V V V mA VC E O VC B O VE B O IC THERMAL CHATACTERISTICS Parameter Max Power Dissipation (Note 1) Storage Temperature Junction Temperaure Thermal Resistance, Junction to Ambient Symbol Value 225 -55 to 150 -55 to 150 556 O Units mW O PT O T TS T G TJ R J A C C O C/W Note 1 : Transistor mouted on FR-5 board 1.0 x 0.75 x 0.062 in. .086(2.20) REV.0-JUN.1.2005 PAGE . 1 MMBT2907A ELECTRICAL CHARACTERISTICS Parameter (TJ=25OC, unless otherwise noted) Symbol Test Condition Min. Typ. Max. Units Collector-Emitter Breakdown Voltage V(B R )C EO V(B R )C BO V(B R )EBO IB L IC E X IC =-10mA,IB =0 IC =-10A,IE =0 IE =-10A,IC =0 VC E =-30V,VE B =-0.5V VC E =-30V,VE B =-0.5V VC E =-50V,IE =0 -60 - - V Collector-Base Breakdown Voltage -60 - - V Emitter-Base Breakdown Voltage -5.0 - - V Base Cutoff Current - - -50 nA - - -50 nA Collector Cutoff Current - - -10 nA A IC B O VC E =-50V,IE =0 TJ =125O C IC =-0.1mA,VC E =-10V IC =-1.0mA,VC E =-10V IC =-10mA,VC E =-10V IC =-150mA,VC E =-10V IC =-500mA,VC E =-10V IC =-150mA,IB =-15mA IC =-500mA,IB =-50mA IC =-150mA,IB =-15mA IC =-500mA,IB =-50mA VC B =-10V,IE =0,f=1MHz VC B =-2V,IC =0,f=1MHz IC =-50mA,VC E =-20V, f=100MHz VC C =-30V,VB E =-0.5V, IC =-150mA,IB =-15mA VC C =-30V,VB E =-0.5V, IC =-150mA,IB =-15mA VC C =-30V,VB E =-0.5V, IC =-150mA,IB 1 =-15mA VC C =-6V,IC =-150mA, IB 1 =IB 2 =-15mA VC C =-6V,IC =-150mA, IB 1 =IB 2 =-15mA VC C =-6V,IC =-150mA, IB 1 =IB 2 =-15mA 75 100 100 100 50 - - -10 300 -0.4 -1.6 -1.3 -2.6 8.0 DC Current Gain hF E - Collector-Emitter Saturation Voltage VC E (S A T ) VB E (S A T ) CC B O CE B O FT to n td tr to ff ts tf V Base-Emitter Saturation Voltage V Collector-Base Capacitance pF Emitter-Base Capacitance - - 30 pF Current Gain-Bandwidth Product 200 - - MHz Turn-On Time - - 45 ns Delay Time - - 10 ns Rise Time - - 40 ns Turn-Off Time - - 100 ns Storage Time - - 80 ns Fall Time - - 30 ns REV.0-JUN.1.2005 PAGE . 2 MMBT2907A 3.0 2.0 VCE=-1.0V VCE=-10V T J=125 C 25 C 1.0 0.7 0.5 0.3 0.2 -0.1 -55 C O O O h FE, NORMALIZED CUTTENT GAIN -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 I C, COLLECTOR CURRENT (mA) Fig.1-DC Cuttent Gain -1.0 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -0.8 I C=-1.0mA -10mA -100mA -500mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05-0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 I B, BASE CUTTENT (mA) Fig.2-Collector Saturation Region 300 200 100 70 50 30 20 10 7.0 5.0 500 tr V CC=-30V I C/I B=10 O T J=25 C t, TIME (ns) 300 200 100 70 50 30 20 tf t, TIME (ns) V CC=-30V I C/I B=10 I B1=I B2 T J=25 OC t s=t s-1/8t f , td@V BE(OFF)=0V 2.0V 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 I C, COLLECTOR CURRENT Fig.3-Turn-On Time 10 7.0 5.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200-300 -500 I C,COLLECTOR CURRENT (mA) Fig.4-Turn-Off Time REV.0-JUN.1.2005 PAGE . 3 MMBT2907A 10 10 f=1.0kHz NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8.0 6.0 I C=-1.0mA,R S=430 W -500 m A,R S=560 W -50 m A,R =2.7k W -100 m A,R =1.6 W 8.0 I C=-50 m A -100 m A -500 m A -1.0mA 6.0 4.0 R S=OPTIMUM SOURCE RESISANCE 2.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 50 100 200 500 1.0k 2.0k 5.0k 10k 20k R S, SOURGE RESISTANCE (OHMS) Fig.6-Source Resistance Effects f,FREQUENCY (kHz) Fig.5-Frequency Effects 50k 30 f T , CURREN T-GAIN- BANDW IDTH PRODU CT (MHz) 400 C eb 300 200 C,CAPACITANCE (pF) 20 10 7.0 5.0 C cb 100 80 60 40 30 20 -1.0 -2.0 V CE=-20V O T J=25 C 3.0 2.0 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0-3.0 -5.0 -10 -20 -30 REVERSE VOLTAGE (VOLTS) -5.0 -10 -20 -50 -100 -200 -500-1000 I C, COLLECTOR CUTTENT (mA) Fig.8-Current-Gain-Bandwidth Product Fig.7-Capacitances -1.0 T J=25 C O +0.5 V BE(sat)@I C/I B=10 O COEFFICIEN T (mV/ C) -0.8 V,VOLTAGE (VOLTS) 0 R QVC for V CE(sat) -0.5 -1.0 -1.5 -2.0 -0.6 V BE(on)@V CE=-10V -0.4 -0.2 V CE(sat)@ I C/I B=10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 R QVB for V BE -50 -100-200 -500 I C,COLLECTOR CURRENT (mA) Fig.9-On Voltage -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 I C,COLLECTOR CUTTENT (mA) Fig.10-Temperature Coefficients REV.0-JUN.1.2005 PAGE . 4 MOUNTING PAD LAYOUT ORDER INFORMATION * Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-AUG.06.2004 PAGE . 5 |
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