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| PH1214-55EL Radar Pulsed Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty Features * * * * * * * * * NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant M/A-COM Products Released, 30 May 07 Outline Drawing Absolute Maximum Ratings at 25C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 58 3.0 7.0 220 -65 to +200 200 Units V V A W C C Electrical Specifications: TC = 25 5C (Room Ambient ) Parameter Test Conditions Frequency Symbol BVCES ICES F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz RTH(JC) POUT GP Min 58 55 6.6 50 - Max 6.0 0.8 -10 3:1 1.5:1 Units V mA C/W W dB % dB - Collector-Emitter Breakdown Voltage IC = 120mA Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability VCE = 28V Vcc = 28V, Pin = 12W Vcc = 28V, Pin = 12W Vcc = 28V, Pin = 12W Vcc = 28V, Pin = 12W Vcc = 28V, Pin = 12W Vcc = 28V, Pin = 12W Vcc = 28V, Pin = 12W C RL VSWR-T VSWR-S 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. PH1214-55EL Radar Pulsed Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty RF Test Fixture Impedance F (GHz) 1.2 1.3 1.4 M/A-COM Products Released, 30 May 07 ZIF () 5.8 + j1.8 2.4 + j1.3 2.4 + j0.6 ZOF () 5.5 - j3.4 3.3 - j2.3 2.0 - j2.3 Test Fixture Circuit Dimensions Test Fixture Assembly 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. |
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