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| SEMICONDUCTOR TECHNICAL DATA SWITCHING TYPE POWER SUPPLY APPLICATIONS. B A USFB13A SCHOTTKY BARRIER TYPE DIODE G H FEATURES Low Profile Surface Mount Package. Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free Wheeling, and Polarity Protection Applications. F E 2 1 CATHODE MARK C ED C APPLICATION Switching Power Supply. Reversed Battery Connection Protection. DC/DC Converter. J I DIM A B C D E MILLIMETERS _ 1.9 + 0.1 _ 2.5 + 0.1 _ 0.61 + 0.05 _ 0.8 + 0.1 _ 0.91 + 0.05 _ 1.2 + 0.1 _ 1.3 + 0.1 _ 0.46 + 0.1 _ 0.11 + 0.05 _ 0.6 + 0.1 1. ANODE Cellular Phones. F G H I J 2. CATHODE MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL VRRM IO IFSM PD * Tj Tstg RATING 30 1 22 830 -40 125 -40 125 Type Name UNIT V A A mW USF Maximum Repetitive Peak Reverse Voltage Average Output Rectified Current Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Power Dissipation Junction Temperature Storage Temperature Range Marking Lot No. * Mounted on a glass epoxy board (Soldering land : 6mm 6mm) BA CATHODE MARK ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current Junction Capacitance ) TEST CONDITION IFM=0.7A MIN. TYP. 5 40 MAX. 0.45 0.52 50 UNIT V V A pF SYMBOL VFM IFM=1.0A IRRM Cj VRRM=30V VR=10V, f=1.0MHz 2007. 5. 11 Revision No : 1 1/2 USFB13A I F - VF 1000 100 REVERSE CURRENT IR (mA) 10 1 3V IR - Tj FORWARD CURRENT IF (A) 900 800 700 600 500 400 300 200 100 0 0 100 200 300 400 500 Ta=25 C 75 C 100 C 150 C VR = 30V 10V 15V 20V 5V 0.1 0.01 0.001 0.0001 0 20 40 60 80 100 120 140 160 FORWARD VOLTAGE VF (V) JUNCTION TEMPERATURE Tj ( C) CJ - VR JUNCTION CAPACITANCE CJ (pF) 250 200 150 100 50 0 Rth(j-a) - t Transient themal impedance Rth (j-a) ( C/W ) 1000 100 10 0 5 10 15 20 25 30 1 0.001 On glass-epoxy substrate Soldering Land 6mm 6mm 0.01 0.1 1 10 100 1000 REVERSE VOLTAGE VR (V) Time t (s) 2007. 5. 11 Revision No : 1 2/2 |
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