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Technical Data Sheet 1.6mm Side Looking Infrared Emitting Diode IR958-8P Features Low forward voltage Peak wavelength p=950nm High reliability Pb free The product itself will remain within RoHS compliant version. Descriptions The IR958-8P is a GaAs infrared emitting diode. The miniature side-facing device is a chip that emits radiation from the side of the pink clear package. Applications VCR Floppy disk drive Automatic stroboscope Cassette type recorder Optoelectronic switch Photo interrupter Device Selection Guide Part No. IR Chip Material GaAs Lens Color Pink Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 2 Page:1 of 6 Device No:DIR-958-142 IR958-8P Package Dimensions Notes: 1.All dimensions are in millimeters 2.Tolerances unless dimensions 0.2mm Device No:DIR-958-142 Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 2 Page:2 of 6 IR958-8P Absolute Maximum Ratings (Ta=25) Item Power Dissipation Reverse Voltage Forward Current Peak Forward Current (*1) Operating Temperature Storage Temperature Soldering Temperature (1/16 inch from body for 5 seconds) Notes: (*1) tw=100 secs. T=10 m secs. Symbol PD VR IF IFP Topr Tstg Tsol Rating 75 6 50 1 -25~+85 -40~+85 260 Unit mW V mA A Electro-Optical Characteristics (Ta=25) Parameter Collector Current Peak Wavelength Spectral Bandwidth View Angle Forward Voltage Reverse Current Symbol Ic(on) p 21/2 VF IR Min 300 Typ 950 80 11 1.2 Max 2000 1.5 10 Unit A nm nm Deg V A Condition IF=4mA,VCE=3.5V IF =20mA IF =20mA IF =20mA IF =20mA VR=6V Device No:DIR-958-142 Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 2 Page:3 of 6 IR958-8P Typical Electro-Optical Characteristics Curves Fig.1 Forward Current vs. Ambient Temperature Fig.2 Spectral Distribution 70 60 50 40 30 20 10 0 -25 0 25 50 75 85 100 100 80 60 40 20 0 IF=20mA Ta=25C Fig.3 Peak Emission Wavelength Ambient Temperature Fig.4 Forward Current vs. Forward Voltage 980 10 4 960 10 940 3 10 920 2 900 -25 1 10 0 25 50 75 100 0 1 2 3 4 Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 2 Page:4 of 6 IR958-8P Typical Electro-Optical Characteristics Curves Fig.5 Relative Intensity vs. Forward Current Fig.6 Relative Radiant Intensity vs Angular Displacement 1000 Ie-Radiant Intensity(mW/sr) -20 -10 0 10 20 30 100 1.0 10 40 50 60 70 80 0.9 0.8 0.7 10 0 1 10 1 10 2 10 3 10 4 IF-Forward Current (mA) Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 2 Page:5 of 6 IR958-8P Test Method To Distinguish Intensity: Ranks Color Code No paint No paint No paint No paint No paint Parameter 7-2 7-1 6-2 6-1 5-2 Symbol Ic(on) Ic(on) Ic(on) Ic(on) Ic(on) Min 300 330 450 630 1000 Max 450 565 770 1300 2000 Unit A A A A A Test Condition IF=4mA,VCE=3.5V IF=4mA,VCE=3.5V IF=4mA,VCE=3.5V IF=4mA,VCE=3.5V IF=4mA,VCE=3.5V Device No:DIR-958-142 Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 2 Page:6 of 6 IR958-8P Reliability Test Item And Condition The reliability of products shall be satisfied with items listed below. Confidence level90% LTPD10% NO. Item Test Conditions TEMP.2605 30mins 5mins 30mins 5mins 10secs 5mins 1000 hrs 1000 hrs 1000 hrs 1000 hrs 22pcs 22pcs 22pcs 22pcs 50 Cycles 22pcs UUpper Specification Limit LLower Specification Limit 0/1 0/1 0/1 0/1 Test Hours/ Cycles 10 secs 50 Cycles Sample Sizes 22pcs 22pcs IRUx2 Ic(ON)Lx0.8 VFUx1.2 Failure Judgment Criteria Ac/Re 0/1 0/1 1 Solder Heat 2 Temperature Cycle H : +85 L : -55 3 Thermal Shock H :+100 L :-10 4 High Temperature Storage 5 Low Temperature Storage 0/1 TEMP.+100 TEMP.-55 6 DC Operating Life IF=20mA 7 High Temperature/ 85 / 85% R.H High Humidity EVERLIGHT ELECTRONICS CO., LTD. Office: No 25, Lane 76, Sec 3, Chung Yang Rd, Tucheng, Taipei 236, Taiwan, R.O.C Tel: 886-2-2267-2000, 2267-9936 Fax: 886-2267-6244, 2267-6189, 2267-6306 http:\\www.everlight.com Device No:DIR-958-142 Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 2 Page:7 of 6 |
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