View IRF7805PBF_4161415.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 96031A
IRF7805PBF
HEXFET(R) Chip-Set for DC-DC Converters
* * * * * N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free
S S S G
1 2 3 4 8 7
A D D D D
6 5
Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. The IRF7805PBF offers maximum efficiency for mobile CPU core DC-DC converters.
SO-8
Device Features VDS RDS(on) Qg Qsw Qoss
T o p V ie w
IRF7805PBF 30V 11m 31nC 11.5nC 36nC
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS Pulsed Drain Current Continuous Drain Current, VGS @ 10V
Max.
30
Units
V
e Power Dissipation e
Power Dissipation
c
e @ 10V e
12 13 10 100 2.5 1.6 0.02 -55 to + 150 W/C C W A
Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
RJL RJA
g Junction-to-Ambient eg
Junction-to-Drain Lead
Parameter
Typ.
--- ---
Max.
20 50
Units
C/W
www.irf.com
1
01/09/08
IRF7805PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltageh Static Drain-to-Source On-Resistanceh Gate Threshold Voltage
Min. Typ. Max. Units
30 --- 1.0 --- --- --- --- --- --- --- --- --- --- --- 0.5 --- --- --- --- --- 9.2 --- --- --- --- --- --- 22 3.7 1.4 6.8 8.2 3.0 --- 16 20 38 16 --- 11 3.0 70 10 150 100 -100 31 --- --- --- 11.5 3.6 1.7 --- --- --- --- nC ns V m V A
Conditions
VGS = 0V, ID = 250A VGS = 4.5V, ID = 7.0A VDS = VGS, ID = 250A VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 100C VGS = 12V VGS = -12V VGS = 5.0V VDS = 16V ID = 7.0A
h
d
Drain-to-Source Leakage Current
IGSS Qg Qgs1 Qgs2 Qgd Qsw Qoss RG td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge
h
nA
Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Switch Charge (Qgs2 + Qgd) Output Charge
nC
h
h
VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V ID = 7.0A RG= 2 Resistive Load
Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
e
Diode Characteristics
Parameter
IS ISM VSD Qrr Qrr(s) Continuous Source Current (Body Diode)A Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- 88 55 2.5 106 1.2 --- --- A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 7.0A, VGS = 0V di/dt = 700A/s VDS = 16V, VGS = 0V, IS = 7.0A di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7.0A
h
f
--- --- ---
V nC nC
Reverse Recovery Charge (with Parallel Schottky)
f
Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss R is measured at TJ of approximately 90C. Devices are 100% tested to these parameters.
2
www.irf.com
Typical Characteristics
IRF7805PBF
Fig 1. Normalized On-Resistance vs. Temperature
Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage
10
ISD , Reverse Drain Current (A)
TJ = 150 C
1
TJ = 25 C
0.1 0.4
V GS = 0 V
0.5 0.6 0.7 0.8 0.9
VSD ,Source-to-Drain Voltage (V)
Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage
100
Fig 4. Typical Source-Drain Diode Forward Voltage
Thermal Response (Z thJA )
D = 0.50 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 1000
10
1
0.1 0.001
t1 , Rectangular Pulse Duration (sec)
www.irf.com
Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
3
IRF7805PBF
SO-8 Package Details
9 6 ' & % $ 7
9DH 6 6 i p 9 @ r r C F G
% @
$ C !$Ab dA 6
!
"
#
%Y
r
DI8C@T HDI H6Y $"! %'' # (' " ! &$ (' '( (%' #(& $&# $AA76TD8 !$AA76TD8 !!'# !## (( (% % $ A A'
HDGGDH@U@ST HDI H6Y "$ &$ !$ "" $ ( !$ #' $ "' # !&AA76TD8 %"$AA76TD8 $' %! !$ $ # !& A' A
r
6
FAA#$ 8 Ab#dA 'YAG & 'YAp
'YAi !$Ab dA
6 867
IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@
APPUQSDIU 'YA&!Ab!'d
%#%Ab!$$d
"YA !&Ab$d
'YA &'Ab&d
SO-8 Part Marking
@Y6HQG@)AUCDTADTA6IADSA& AHPTA@U
DIU@SI6UDPI6G S@8UDAD@S GPBP
;;;; )
96U@A8P9@AXX QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
4
www.irf.com
IRF7805PBF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/2008
www.irf.com
5

▲Up To Search▲

Price & Availability of IRF7805PBF

	To Download IRF7805PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .