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| SEMICONDUCTOR TECHNICAL DATA AUDIO SIGNAL TUNING. FEATURES Low Series Resistance Small Package : ESC KDV1484E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK High Capacitance Ratio C 1 E 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 15 150 -55 150 UNIT V 1. ANODE 2. CATHODE B A DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC Marking Type Name V1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Current IR C2V Capacitance C6V C8V Capacitance Ratio Series Resistance C(Max.)-C(Min.) C(Min.) (VR=2V~8V) C2V/C6V C2V/C8V rS ) TEST CONDITION VR=15V VR=2V, f=1MHz VR=6V, f=1MHz VR=8V, f=1MHz VR=5V, f=470MHz MIN. 14.15 6.26 1.9 2.5 TYP. 5.4 MAX. 10 15.75 8.20 0.57 pF UNIT nA SYMBOL Note : Available in matched group for capacitance to 2.0%. 8V 2006. 10. 11 Revision No : 0 1/2 KDV1484E IR - V R TOTAL CAPACITANCE CT (pF) 10 -10 CT - VR 20 f=1MHz REVERSE CURRENT IR (A) 15 10 -11 10 10 -12 5 10 -13 0 1 10 50 0 10 20 30 40 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) rs - V R 0.6 0 f=470MHz (LOG CT) / (LOG VR) - VR SERIES RESISTANCE rs () (LOG CT) / (LOG VR) 0.5 0.4 0.3 0.2 0.1 0 1 10 50 -0.5 -1.0 -1.5 1 10 50 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) 2006. 10. 11 Revision No : 0 2/2 |
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