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| TELEFUNKEN Semiconductors TDS.51.. 13 mm Seven Segment Display Color Red Orange red g Yellow Green Type TDSR515. TDSR516. TDSO515. TDSO516. TDSY515. TDSY516. TDSG515. TDSG516. Circuitry Common anode Common cathode Common anode Common cathode Common anode Common cathode Common anode Common cathode Description The TDS.51.. series are 13 mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance up to 7 meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments provide an optimum on-off contrast. All displays are categorized in luminous intensity groups. That allows users to assemble displays with uniform appearence. Typical applications include instruments, panel meters, point-of-sale terminals and household equipment. Features D D D D D D D Evenly lighted segments Grey package surface Untinted segments Luminous intensity categorized Yellow and green categorized for color Wide viewing angle Suitable for DC and high peak current 96 11508 Applications Panel meters Test- and measure- equipment Point-of-sale terminals Control units TV sets Rev. A1: 01.06.1995 1 (9) TDS.51.. Absolute Maximum Ratings Tamb = 25C, unless otherwise specified TELEFUNKEN Semiconductors TDSR515. /TDSR516. , TDSO515. /TDSO516. , TDSY515. /TDSY516. , TDSG515. /TDSG516. Parameter Reverse voltage per segment or DP DC forward current per segment or DP Test Conditions Type TDSR315./316. TDSO315./316. TDSY315./316. TDSG315./316. TDSR315./316. TDSO315./316. TDSY315./316. TDSG315./316. Symbol VR IF IF IF IF IFSM IFSM IFSM IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 35 25 25 25 0.5 0.15 0.15 0.15 550 100 -40 to + 85 -40 to + 85 260 100 Unit V mA mA mA mA A A A A mW C C C C K/W Surge forward current g per segment or DP tp 10 ms m (non repetitive) Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance LED junction/ ambient Tamb 45C t 3 sec, 2mm below seating plane Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Red (TDSR515. , TDSR516. ) Parameter Test Conditions IF = 10 mA Type Symbol IV ld lp VF VR Min 280 Typ Max Unit mcd Luminous intensity per segment TDSR5150/5160 (digit average) 1) Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage per segment or DP IF = 20 mA Reverse voltage per segment or DP IR = 10 mA 1) I Vmin and IV groups are mean values of segments a to g 6 655 660 50 1.6 15 2 nm nm deg V V 2 (9) Rev. A1: 01.06.1995 TELEFUNKEN Semiconductors Orange red (TDSO515. , TDSO516. ) Parameter Test Conditions IF = 10 mA Type Symbol IV ld lp VF VR TDS.51.. Min 700 612 630 50 2 15 625 Typ Max Unit mcd Luminous intensity per segment TDSO5150/5160 (digit average) 1) Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage per segment or DP IF = 20 mA Reverse voltage per segment or DP IR = 10 mA 1) I Vmin and IV groups are mean values of segments a to g Yellow (TDSY515. , TDSY516. ) Parameter Test Conditions IF = 10 mA Type 3 6 nm nm deg V V Symbol IV ld lp VF VR Min 700 581 Typ Max Unit mcd Luminous intensity per segment TDSY5150/5160 (digit average) 1) Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage per segment or DP IF = 20 mA Reverse voltage per segment or DP IR = 10 mA 1) I Vmin and IV groups are mean values of segments a to g Green (TDSG515. , TDSG516. ) Parameter Test Conditions IF = 10 mA Type 594 585 50 2.4 15 3 6 nm nm deg V V Symbol IV ld lp VF VR Min 700 562 Typ Max Unit mcd Luminous intensity per segment TDSG5150/5160 (digit average) 1) Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage per segment or DP IF = 20 mA Reverse voltage per segment or DP IR = 10 mA 1) I Vmin and IV groups are mean values of segments a to g 575 565 50 2.4 15 3 6 nm nm deg V V Rev. A1: 01.06.1995 3 (9) TDS.51.. 1000 PV - Power Dissipation ( mW ) IF - Forward Current ( mA ) 1000 Red 100 TELEFUNKEN Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 800 600 10 400 200 0 0 20 40 60 80 100 1 tp/T=0.001 tp=10ms 1 1.5 2 2.5 3 0.1 Tamb - Ambient Temperature ( C ) 95 10073 95 11481 VF - Forward Voltage ( V ) Figure 1. Power Dissipation vs. Ambient Temperature 60 IF - Forward Current ( mA ) 50 40 30 20 10 0 0 95 11482 Figure 4. Forward Current vs. Forward Voltage 1.6 Iv rel - Relative Luminous Intensity Red 1.2 Red 0.8 0.4 0 20 40 60 80 100 95 10074 IF=10mA 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature 0 Iv rel - Relative Luminous Intensity 10 20 Figure 5. Rel. Luminous Intensity vs. Ambient Temperature 2.4 Iv rel - Relative Luminous Intensity Red 2.0 1.6 1.2 0.8 0.4 IFAV=10mA, const. 0 10 95 10075 30 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 20 0.5 50 0.2 100 0.1 200 0.05 500 0.02 IF(mA) tp/T 95 10082 1 Figure 3. Rel. Luminous Intensity vs. Angular Displacement Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 4 (9) Rev. A1: 01.06.1995 TELEFUNKEN Semiconductors TDS.51.. 1.6 Iv rel - Relative Luminous Intensity Orange-Red 1.2 10 Iv rel - Relative Luminous Intensity Red 1 0.8 0.1 0.4 0.01 1 95 10076 0 10 IF - Forward Current ( mA ) 100 95 10087 IF=10mA 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 7. Relative Luminous Intensity vs. Forward Current 1.2 Iv rel - Relative Luminous Intensity Red 1.0 0.8 0.6 0.4 0.2 0 620 95 10077 Figure 10. Rel. Luminous Intensity vs. Ambient Temperature 2.4 Iv rel - Relative Luminous Intensity Orange-Red 2.0 1.6 1.2 0.8 0.4 IFAV=10mA, const. 0 640 660 680 700 720 95 10088 10 1 20 0.5 50 0.2 100 0.1 200 0.05 500 0.02 IF(mA) tp/T l - Wavelength ( nm ) Figure 8. Relative Luminous Intensity vs. Wavelength 1000 Orange-Red IF - Forward Current ( mA ) 100 Figure 11. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 10 Iv rel - Relative Luminous Intensity Orange-Red 1 10 0.1 1 tp/T=0.001 tp=10ms 0 2 4 6 8 10 0.1 95 10086 0.01 1 95 10089 10 IF - Forward Current ( mA ) 100 VF - Forward Voltage ( V ) Figure 9. Forward Current vs. Forward Voltage Figure 12. Relative Luminous Intensity vs. Forward Current Rev. A1: 01.06.1995 5 (9) TDS.51.. 1.2 Iv rel - Relative Luminous Intensity Orange-Red 1.0 0.8 0.6 0.4 0.2 0 590 95 10090 TELEFUNKEN Semiconductors 2.4 Iv rel - Relative Luminous Intensity Yellow 2.0 1.6 1.2 0.8 0.4 0 610 630 650 670 690 95 10260 10 1 20 0.5 50 0.2 100 0.1 200 0.05 500 0.02 IF(mA) tp/T l - Wavelength ( nm ) Figure 13. Relative Luminous Intensity vs. Wavelength 1000 Yellow 100 tp/T=0.001 tp=10ms Figure 16. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 10 Iv rel - Relative Luminous Intensity Yellow 1 IF - Forward Current ( mA ) 10 0.1 1 0.1 0 95 10030 0.01 2 4 6 8 10 95 10033 1 10 IF - Forward Current ( mA ) 100 VF - Forward Voltage ( V ) Figure 14. Forward Current vs. Forward Voltage 1.6 Iv rel - Relative Luminous Intensity Figure 17. Relative Luminous Intensity vs. Forward Current 1.2 Iv rel - Relative Luminous Intensity Yellow 1.2 Yellow 1.0 0.8 0.6 0.4 0.2 0 550 0.8 0.4 0 0 95 10031 IF=10mA 20 40 60 80 100 95 10039 570 590 610 630 650 Tamb - Ambient Temperature ( C ) l - Wavelength ( nm ) Figure 15. Rel. Luminous Intensity vs. Ambient Temperature Figure 18. Relative Luminous Intensity vs. Wavelength 6 (9) Rev. A1: 01.06.1995 TELEFUNKEN Semiconductors TDS.51.. 10 Iv rel - Relative Luminous Intensity Green 1 1000 IF - Forward Current ( mA ) Green 100 10 tp/T=0.001 tp=10ms 0.1 1 0.1 0 95 10034 0.01 2 4 6 8 10 95 10037 1 10 IF - Forward Current ( mA ) 100 VF - Forward Voltage ( V ) Figure 19. Forward Current vs. Forward Voltage 1.6 Iv rel - Relative Luminous Intensity Figure 22. Relative Luminous Intensity vs. Forward Current 1.2 Iv rel - Relative Luminous Intensity Green 1.2 Green 1.0 0.8 0.6 0.4 0.2 0 520 0.8 0.4 IF=10mA 0 20 40 60 80 100 0 95 10035 540 560 580 600 620 Tamb - Ambient Temperature ( C ) 95 10038 l - Wavelength ( nm ) Figure 20. Rel. Luminous Intensity vs. Ambient Temperature 2.4 Iv rel - Relative Luminous Intensity Green 2.0 1.6 1.2 0.8 0.4 0 10 95 10263 Figure 23. Relative Luminous Intensity vs. Wavelength 20 0.5 50 0.2 100 0.1 200 0.05 500 0.02 IF(mA) tp/T 1 Figure 21. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Rev. A1: 01.06.1995 7 (9) TDS.51.. Dimensions in mm TELEFUNKEN Semiconductors 95 11344 Pin connections 10 9 8 a 7 6 1 2 3 4 5 6 7 8 9 10 e d A (K) c DP b a A (K) f g f g e d c b DP 1 2 3 4 5 95 10896 8 (9) Rev. A1: 01.06.1995 TELEFUNKEN Semiconductors TDS.51.. Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A1: 01.06.1995 9 (9) |
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