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| AEGIS SEMICONDUTORES LTDA. A5F:1000.XXHY VOLTAGE RATINGS Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 125OC A5F:1000.02HY A5F:1000.04HY A5F:1000.06HY A5F:1000.08HY A5F:1000.10HY A5F:1000.12HY A5F:1000.14HY A5F:1000.16HY A5F:1000.18HY A5F:1000.20HY 200 400 600 800 1000 1200 1400 1600 1800 2000 Max. VRSM , VR (V) Max. nonrep. peak reverse voltage O TJ = -40 to 0 C 200 400 600 800 1000 1200 1400 1600 1800 2000 TJ = 25 to 125OC 300 500 700 900 1100 1300 1500 1700 1900 2100 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 125 -40 to 150 1000 70 1500 19.3 IFSM Max. Peak non-rep. surge current 21.1 kA 22.1 24 1328 I2t Max. I2t capability 1447 1514 1650 It 2 1/2 UNITS O O NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms Initial TJ = 125 C, rated VRRM applied after surge. O O O C C C A O IF(RMS) Nom. RMS current A Initial TJ = 125 C, no voltage applied after surge. O Initial TJ = 125 C, rated VRRM applied after surge. Initial TJ = 125OC, no voltage applied after surge. O kA s t = 10ms t = 8.3 ms kA2s1/2 2 1/2 1/2 tx . 2 Max. I t 2 1/2 capability 25500 Initial TJ = 125 C, no voltage applied after surge. for time tx = I t O 2 It * (0.1 < tx < 10ms). di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power F Mounting Force 800 A/ms TJ = 125 C, VD = VDRM , ITM = 3140A. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms - 16 3 2500 W W N.m Rua Felicissimo de Souza, 44 - CEP 05160-040 - Pirituba - Sao Paulo - SP - Brasil Telefone (phone): (5511) 3901-1093 - Fax: (5511) 3903-0337 Web site: www.aegis.com.br - e-mail: aegis@aegis.com.br AEGIS SEMICONDUTORES LTDA. A5F:1000.XXHY CHARACTERISTICS PARAMETER VTM peak on-state voltage VT(TO) Threshold voltage rT Slope resistance IL Latching current IH Holding current td Delay time MIN. ------------TYP. 2.22 ----270 100 1.5 MAX. UNITS 2.36 1.43 0.36 --500 --V V mW mA mA ms ms A V/ms TEST CONDITIONS Initial TJ = 25OC, 50-60Hz half sine, I peak = 3140A. TJ = 125 OC Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)]2 Use low values for ITM < p rated IT(AV) TC = 25O C, 12V anode. Gate pulse: 10V, 20W, 100ms. TC = 25OC, 12V anode. Initial IT = 10A. TC = 25OC, VD = rated VDRM , 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. TJ = 125OC, ITM = 500A, di/dt = 25A/ms, VR = 50V. dv/dt = 200 V/ms lin. To 80% rated VDRM . Gate: 0V, 100W. TJ = 125OC, ITM = 3140A, diR/dt = 50A/ms. TJ = 125OC. Exp. to 100% or lin. To 80% V DRM , gate open. Higher dv/dt values avaliable. tq Turn-off time IRM(REC) Recovery current ----- --135 700 --100 ------1.2 ----------425(15) A-24 15-60 ------------3.3 2.5 0.3 0.023 0.026 0.027 0.01 --O dv/dt Critical rate-of-rise of off- 500 state voltage 1000 IRM, IDM Peak reverse and offstate current IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigger RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style --400 200 ----------------- TJ = 125OC, Exp. To 67% VDRM , gate open. mA mA V V O TJ = 125OC, Rated VRRM and VDRM , gate open. TC = -40OC TC = 25OC TC = -40OC TC = 25OC TC = 25OC, Max. Value which will not trigger with rated V DRM anode-to-cathode. +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. C/W DC operation. C/W 180O sine wave, double side cooled. C/W 120 O rectangular wave, double side cooled. O O O C/W Mtg. Surface smooth, flat and greased. ----- g(oz.) JEDEC Rua Felicissimo de Souza, 44 - CEP 05160-040 - Pirituba - Sao Paulo - SP - Brasil Telefone (phone): (5511) 3901-1093 - Fax: (5511) 3903-0337 Web site: www.aegis.com.br - e-mail: aegis@aegis.com.br AEGIS SEMICONDUTORES LTDA. A5F:1000.XXHY Maximum Allowable Case Temperature Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) 120 Maximum Allowable Case Temperature (C) 120 110 110 100 100 90 30 60 90 30 80 90 120 80 60 90 120 DC 70 180 70 180 60 0 200 400 600 800 1000 1200 *Sinusoidal waveform 60 0 *Rectangular waveform 250 500 750 1000 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average Forward Power Loss 16500 30 15000 Maximum Average Forward Power Loss 30 Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) 15000 13500 12000 10500 9000 7500 6000 4500 3000 1500 0 *Sinusoidal waveform 90 120 180 60 13500 12000 10500 9000 7500 6000 4500 3000 1500 0 *Rectangular waveform 60 90 120 180 DC 0 250 500 750 1000 1250 1500 0 500 1000 1500 Average Forward Current (A) Average Forward Current (A) Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics Rua Felicissimo de Souza, 44 - CEP 05160-040 - Pirituba - Sao Paulo - SP - Brasil Telefone (phone): (5511) 3901-1093 - Fax: (5511) 3903-0337 Web site: www.aegis.com.br - e-mail: aegis@aegis.com.br AEGIS SEMICONDUTORES LTDA. A5F:1000.XXHY Forward Voltage Drop 0.1 Transient Thermal Impedance ZthJC 1000 Transient Thermal Impedance ZthJC (C/W) Instantaneous Forward Current (A) 0.01 100 125C 25C 10 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1E-3 1E-3 0.01 0.1 1 10 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics Frequency Characteristics 10000 50 Hz 100 Hz Frequency Characteristics 10000 50 Hz 100 Hz Peak On-State Current (A) 200 Hz 500 Hz 1 kHz 2 kHz 10 kHz 15 kHz 5 kHz Peak On-State Current (A) 200 Hz 500 Hz 1 kHz 2 kHz 5 kHz 10 kHz 15 kHz 1x101 *Sinusoidal pulse Tc = 60C 1x102 1x103 104 *Rectangular pulse Tc = 60C 1x102 1x103 104 Pulse Basewidth (?s) Pulse Basewidth (?s) Fig. 7 - Frequency Characteristics Fig. 8 - Frequency Characteristics Rua Felicissimo de Souza, 44 - CEP 05160-040 - Pirituba - Sao Paulo - SP - Brasil Telefone (phone): (5511) 3901-1093 - Fax: (5511) 3903-0337 Web site: www.aegis.com.br - e-mail: aegis@aegis.com.br AEGIS SEMICONDUTORES LTDA. A5F:1000.XXHY Frequency Characteristics 10000 10000 50 Hz 100 Hz Frequency Characteristics Peak On-State Current (A) 200 Hz 500 Hz 1 kHz 2 kHz 5 kHz 10 kHz 15 kHz Peak On-State Current (A) 100 Hz 200 Hz 1 kHz 2 kHz 5 kHz 10 kHz 15 kHz 500 Hz 50 Hz *Sinusoidal Pulse Tc = 80C 1x102 1x103 104 *Rectangular Pulse Tc = 80C 1x102 1x103 104 Pulse Basewidth (?s) Pulse Basewidth (?s) Fig. 9 - Frequency Characteristics Fig. 10 - Frequency Characteristics Frequency Characteristic 10000 Frequency Characteristics 10000 200 Hz 500 Hz 1 kHz 2 kHz 5 kHz 10 kHz 15 kHz Peak On-State Current (A) 100 Hz 50 Hz Peak On-State (A) 200 Hz 2 kHz 5 kHz 10 kHz 15 kHz 1 kHz 500 Hz 100 Hz 50 Hz 1000 *Sinusoidal pulse Tc = 100C 1x102 1x103 104 Pulse Basewidth (?s) *Rectangular pulse Tc = 100C 1x102 1x103 104 Pulse Basewidth (?s) Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Rua Felicissimo de Souza, 44 - CEP 05160-040 - Pirituba - Sao Paulo - SP - Brasil Telefone (phone): (5511) 3901-1093 - Fax: (5511) 3903-0337 Web site: www.aegis.com.br - e-mail: aegis@aegis.com.br AEGIS SEMICONDUTORES LTDA. A5F:1000.XXHY Maximu On-State Energy Power Loss 1000 10 J 5J 5J Maximu On-State Energy Power Loss 1000 20 J 10 J 2J 2J Peak On-State Current (A) 0.5 J 0.1 J 0.2 J 0.05 J 0.01 J 0.02 J 1J Peak On-State Current (A) 0.5 J 0.2 J 0.1 J 1J 100 100 0.02 J 0.01 J 0.05 J 10 10 *Sinusoidal pulse 1x102 1x103 104 *Rectangular pulse 1x103 104 Pulse Basewidth (?s) Pulse Basewidth (?s) Fig. 13 - Maximum On-State Energy Power Loss Characteristics Fig. 14 - Maximum On-State Energy Power Loss Characteristics 450 TJ = 125C Reverse Recovery Charge ITM = 1500A 100 Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 10?; tr<=1?s. b)Recommended load line for <=30% rated di/dt: 10V, 10?; tr<=1?s. Gate Characteristics (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms Maximum Reverse Recovery Charge (?C) 400 350 300 250 200 150 100 50 10 20 30 40 50 60 70 80 90 100 0.1 1E-3 500A Instantaneous Gate Voltage (V) 10 (b) (a) 1000A TJ = -40C T = 25C 1 TJ = 125C (1) (2) (3) VGD IGD Frequency Limited by PG(Av) 0.01 0.1 1 10 100 Rate of Fall of On-State Current - di/dt (A/?s) Instantaneous Gate Current (A) Fig. 15 - Reverse Recovery Charge Characteristics Fig. 16 - Gate Trigger Characteristics Rua Felicissimo de Souza, 44 - CEP 05160-040 - Pirituba - Sao Paulo - SP - Brasil Telefone (phone): (5511) 3901-1093 - Fax: (5511) 3903-0337 Web site: www.aegis.com.br - e-mail: aegis@aegis.com.br AEGIS SEMICONDUTORES LTDA. A5F:1000.XXHY A-24 Fig. 17 - Outline Characteristics Rua Felicissimo de Souza, 44 - CEP 05160-040 - Pirituba - Sao Paulo - SP - Brasil Telefone (phone): (5511) 3901-1093 - Fax: (5511) 3903-0337 Web site: www.aegis.com.br - e-mail: aegis@aegis.com.br |
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