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| MIG200J6CMB1W MITSUBISHI SEMICONDUCTOR MIG200J6CMB1W (600V/200A 6in1) High Power Switching Applications Motor Control Applications * * * * * * Integrates inverter and control circuits (IGBT drive units, and units for protection against short-circuit current, over-current, under-voltage and over-temperature) into a single package. The electrodes are isolated from the case Low thermal resistance VCE (sat) = 2.0 V (typ.) UL recognized: File No.E87989 Weight: 385 g (typ.) Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT W 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. FO (U) VD (W) Open V 3. 10. 17. IN (U) FO (W) IN (X) 4. 11. 18. U GND (U) IN (W) IN (Y) 5. 12. 19. VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L) GND (L) N 7. 14. IN (V) FO (L) P 2004-10-01 1/10 MIG200J6CMB1W Package Dimensions Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) Open 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2004-10-01 2/10 MIG200J6CMB1W Signal Terminal Layout Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) Open 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2004-10-01 3/10 MIG200J6CMB1W Maximum Ratings (Tj = 25C) Stage Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Module Storage temperature Range Isolation voltage Screw torque AC 1 min M5 Tc = 25C, DC Tc = 25C, DC Tc = 25C, DC VD-GND Terminal IN-GND Terminal FO-GND Terminal FO sink current Characteristics Condition P-N Power terminal Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO Rating 450 600 200 200 1000 150 20 20 20 10 -20~+100 -40~+125 2500 3 Unit V V A A W C V V V mA C C V N*m Tc Tstg VISO Electrical Characteristics 1. Inverter stage Characteristics Collector cut-off current Symbol ICES Test Condition VCE = 600 V VD = 15 V, IC = 200 A, VIN = 15 V 0 V Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1.7 VCC = 300 V, IC = 200 A VD = 15 V, VIN = 3 V 0 V Tj = 25C, Inductive load (Note 1) Typ. 2.0 2.2 2.2 2.0 0.4 0.2 1.3 0.2 Max 1 10 2.4 2.6 2.9 2.3 s V V Unit mA Collector-emitter saturation voltage Forward voltage VCE (sat) VF ton tc (on) IF = 200 A, Tj = 25C Switching time trr toff tc (off) Note 1: Switching time test circuit & timing chart 2004-10-01 4/10 MIG200J6CMB1W 2. Control stage (Tj = 25C) Characteristics Control circuit current Input on signal voltage Input off signal voltage Protection Fault output current Normal Over current protection trip level Inverter High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC SC toff (OC) Trip level Reset level Trip level Reset level OT OTr UV UVr tFO VD = 15 V VD = 15 V Test Condition Min 1.4 2.2 320 320 110 11.0 12.0 1 Typ. 13 39 1.6 2.5 10 5 118 98 12.0 12.5 2 Max 17 51 1.8 2.8 12 mA 0.1 125 12.5 13.0 3 ms A A s C V Unit mA VD = 15 V VD = 15 V VD = 15 V, Tj < 125C = VD = 15 V, Tj < 125C = VD = 15 V Case temperature Short circuit protection trip Inverter level Over current cut-off time Over temperature protection Control supply under voltage protection Fault output pulse width V 3. Thermal resistance (Tc = 25C) Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) IGBT FRD Compound is applied Test Condition Min Typ. 0.013 Max 0.125 0.195 C/W Unit C/W 2004-10-01 5/10 MIG200J6CMB1W Switching Time Test Circuit Intelligent power module TLP559 (IGM) VD 0.1 F 15 k OUT IN 15 V 47 F GND VS P GND U (V, W) VCC VD IF = 16mA PG 15 V 47 F GND 0.1 F 15 k OUT IN VS N GND Timing Chart Input pulse 15 V VIN Waveform 0 2.5 V 1.6 V 90% Irr IC Waveform Irr 90% trr 20% Irr VCE Waveform 10% toff 10% tc (off) 10% ton 10% tc (on) 2004-10-01 6/10 MIG200J6CMB1W 4. Recommended conditions for application Characteristics Supply voltage Control supply voltage Carrier frequency Dead time (Note 2) Symbol VCC VD fc tdead Test Condition P-N Power terminal VD-GND Signal terminal PWM Control Switching time test circuit (See page.6) Min 13.5 4 Typ. 300 15 Max 400 16.5 20 Unit V V kHz s Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 2004-10-01 7/10 MIG200J6CMB1W IC - VCE 400 400 IC - VCE VD = 17 V VD = 17 V 13 V IC (A) 300 15 V 200 IC (A) 15 V 300 13 V Collector current Collector current Common emitter Tj = 25C 200 100 100 Common emitter Tj = 125C 0 0 1 2 3 4 0 0 1 2 3 4 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Switching time - IC 10 10 Switching time - IC (s) 1 (s) ton toff ton toff 1 tc (on) Switching time tc (on) tc (off) 0.1 Tj = 25C VCC = 300 V VD = 15 V L-LOAD 0.01 0 50 100 150 200 250 Switching time tc (off) 0.1 Tj = 125C VCC = 300 V VD = 15 V L-LOAD 0.01 0 50 100 150 200 250 Collector current IC (A) Collector current IC (A) IF - VF 400 350 100 trr, Irr - IF Peak reverse recovery current Irr (A) Reverse recovery time trr (x10 ns) Irr (A) Forward current IF 300 250 200 150 100 Common cathode 50 0 0 : Tj = 25C : Tj = 125C 1 2 3 4 10 trr Common cathode : Tj = 25C : Tj = 125C 1 0 50 100 150 200 250 Forward voltage VF (V) Forward current IF (A) 2004-10-01 8/10 MIG200J6CMB1W OC - Tc (mA) 600 50 ID (H) - fc Over current protection trip level OC (A) ID (H) High side control circuit current 500 40 400 30 300 20 200 100 VD = 15 V 0 0 25 50 75 100 125 150 10 VD = 15 V Tj = 25C 0 0 5 10 15 20 25 Case temperature Tc (C) Carrier frequency fc (kHz) ID (L) - fc (mA) 120 400 Reverse bias SOA ID (L) 100 OC Low side control circuit current 80 IC (A) Collector current 320 240 60 160 40 20 VD = 15 V Tj = 25C 0 0 5 10 15 20 25 80 VD = 15 V Tj < 125C = 0 0 100 200 300 400 500 600 700 Carrier frequency fc (kHz) Collector-emitter voltage VCE (V) Rth (t) - tw Inverter stage 1 Transient thermal resistance Rth (t) (C/W) Diode 0.1 Transistor 0.01 Tc = 25C 0.001 0.001 0.01 0.1 1 10 Pulse width tw (s) 2004-10-01 9/10 MIG200J6CMB1W Turn on loss - IC 100 100 Turn off loss - IC (mJ) 10 (mJ) Eoff 10 Eon Turn on loss VCC = 300 V 0.1 VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 0.01 0 50 100 150 200 250 Turn off loss 1 1 VCC = 300 V 0.1 VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 0.01 0 50 100 150 200 250 Collector current IC (A) Collector current IC (A) 2004-10-01 10/10 |
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