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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES S8836B HIGH POWER P1dB= 29.5 dBm at 8 GHz HIGH GAIN G1dB= 7.5 dB at 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency SYMBOL P1dB G1dB IDS VDS= 10V f = 8 GHz CONDITION UNIT MIN. TYP. MAX. dBm dB A % 28.5 6.5 29.5 7.5 0.25 30 0.4 add ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITION VDS= 3V IDS= 0.28A VDS= 3V IDS= 5mA VDS= 3V VGS= 0V IGS= -10A Channel to Case UNIT MIN. mS V A V C/W -2.0 -5 TYP. MAX. 170 -3.5 0.55 20 -5.0 0.7 30 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Revised Aug. 2000 S8836B ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 1.4 7.5 175 -65 +175 PACKAGE OUTLINE (2-3K1B) Unit in mm 2-1.60.1 2.2 MAX. 0.50.15 2-C0.5 2.0 MIN. Gate Source 2.30.1 2.50.1 Drain 0.50.15 6.10.1 8.7 MAX 3.0 MAX 0.1 -0.05 +0.1 2.0 MIN. 0.530.2 HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 0.80.15 1.5 MAX. S8836B RF PERFORMANCES Output Power vs. Input Power f = 8 GHz DS=10V VDS=10V DS IDS 0.25A 90 80 70 31 Po 29 60 Po(dBm 27 add 40 30 25 20 10 23 16 18 20 22 Pin(dBm) 24 26 0 POWER DISSIPATION vs. CASE TEMPERATURE 6 5 4 PT(W) 3 2 1 0 0 40 80 120 160 200 Tc(C) 3 add(%) 50 |
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