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Datasheet File OCR Text: |
Semiconductor STS1979 PNP Silicon Transistor Description * Medium power amplifier Features * Large collector current : ICMax=-500mA * Suitable for low-Voltage operation because of its low saturation voltage * Complementary pair with STS5342 Ordering Information Type NO. STS1979 Marking STS1979 Package Code TO-92 Outline Dimensions 3.450.1 4.50.1 2.250.1 unit : mm 4.50.1 0.40.02 2.060.1 14.00.40 1.27 Typ. 2.54 Typ. 123 1.200.1 0.38 PIN Connections 1. Emitter 2. Base 3. Collector KST-9051-000 1 STS1979 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -40 -32 -5 -500 625 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Test Condition IC=-100A, IE=0 IC=-10mA, IB=0 IE=-10A, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA IC=-100mA, IB=-10mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz Min. Typ. Max. -40 -32 -5 120 200 7.5 -0.1 -0.1 240 -0.25 - Unit V V V A A V MHz pF KST-9051-000 2 STS1979 Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - VBE Fig. 3 I C - VCE Fig. 4 VCE(sat) - IC Fig. 5 hFE - IC Fig. 6 hFE - IC KST-9051-000 3 |
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