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SUR2X100-06
Ultra Fast Recovery Epitaxial Diodes
Dimensions SOT-227(ISOTOP)
Dim. A B C D E F G H J K L M N O P Q Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08
SUR2X100-06
VRSM V 600
VRRM V 600
R S T U V W
Symbol IFRMS IFAVM IFRM
Test Conditions TVJ=TVJM TC=70oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
Maximum Ratings 150 96 TBD 1200 1300 1080 1170 7200 7100 5800 5700 -40...+150 150 -40...+150
Unit A
IFSM
TVJ=150oC TVJ=45oC
A
I2t
TVJ=150oC
A2s
TVJ TVJM Tstg Ptot VISOL Md Weight TC=25oC 50/60Hz, RMS _ IISOL<1mA Mounting torque Terminal connection torque (M4)
o
C
250 2500 1.5/13 1.5/13 30
W V~ Nm/lb.in. g
SUR2X100-06
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=100A; TVJ=150oC TVJ=25oC For power-loss calculations only
Characteristic Values typ. max. 3 1 20 1.17 1.25 0.70 4.7 0.5 0.05
Unit
IR
mA
VF VTO rT RthJC RthCK trr IRM
V V m K/W ns A
IF=1A; -di/dt=400A/us; VR=30V; TVJ=25oC _ VR=100V; IF=80A; -diF/dt=200A/us; L<0.05mH; TVJ=100 C
o
35 19
50 24
FEATURES
* International standard package miniBLOC (ISOTOP compatible) * Isolation voltage 2500 V~ * Matched diodes f. parallel operation * Planar passivatd chips * Two independent diodes * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling
SUR2X100-06
Ultra Fast Recovery Epitaxial Diodes
150 A 125 IF Qr 100 4 75
TVJ=150C
7 T = 100C C VJ V = 300V 6R 5
IF=200A IF=100A IF= 50A
80 A TVJ= 100C 70 VR = 300V IRM 60 50 40 30
IF=200A IF=100A IF= 50A
3 2 1
TVJ=25C
50
TVJ=100C
20 10 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt
25 0 0.0
0.5
1.0 V VF
1.5
0 100
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr versus -diF/dt
260 ns 240 trr 220 200
TVJ= 100C VR = 300V
Fig. 3 Peak reverse current IRM versus -diF/dt
60 V 50 VFR 40
tfr
1.4
1.2 Kf 1.0
Qr IRM
3.0 TVJ= 100C IF = 100A us 2.5 tfr 2.0
VFR
0.8
180 160
IF=200A IF=100A IF= 50A
30 20 10 0
1.5 1.0 0.5 0.0 1000 A/us
0.6 140 0.4 0 50 100 TVJ C 150 120 0 200 400 600 A/us 1000 800 -diF/dt
0
200
400
600 800 diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1 K/W
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.02 0.05 0.076 0.24 0.114 ti (s) 0.00002 0.00081 0.01 0.94 0.45
D=0.7
ZthJC
0.5 0.3 0.2 0.1
1 2 3 4 5
0.1
0.05 Single Pulse
0.05 0.001
0.01
0.1
1s
10 t
Fig. 7 Transient thermal impedance junction to case at various duty cycles

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