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| HUR1560 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode HUR1560 VRSM V 600 VRRM V 600 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=140oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=1A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 35 15 110 0.1 0.1 -55...+175 175 -55...+150 95 0.4...0.6 2 Unit A A mJ A o C W Nm g HUR1560 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=15A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 100 0.5 1.35 2.04 1.6 0.5 Unit uA mA V K/W ns IR VF RthJC RthCH trr IRM IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C o 35 4.9 A FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR1560 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 40 A IF 30 2000 TVJ= 100C nC VR = 300V 40 A 30 IRM TVJ= 100C VR = 300V 1500 TVJ=150C TVJ=100C 20 Qr 1000 TVJ= 25C IF= 30A IF= 15A IF= 7.5A 20 IF= 30A IF= 15A IF= 7.5A 10 500 10 0 0 1 VF 2 V 0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 120 ns Fig. 3 Peak reverse current IRM versus -diF/dt 20 2.0 TVJ= 100C VR = 300V TVJ= 100C V IF = 15A 1.6 VFR us tfr 1.2 1.5 Kf trr 110 VFR 15 100 1.0 IF= 30A IF= 15A IF= 7.5A tfr 10 0.8 IRM 0.5 90 Qr 80 5 0.4 0.0 0 40 80 120 C 160 TVJ 70 0 200 400 600 -diF/dt 800 A/us 1000 0 0 200 400 0.0 600 A/us 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 ZthJC 0.1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.908 0.35 0.342 ti (s) 0.0052 0.0003 0.017 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case Sirectifier R |
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