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PD - 97323 IRFP4004PBF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G HEXFET(R) Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability S 40V 1.35m 1.70m 350Ac 195A D D G S TO-247AC G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 350c 250c 195 1390 380 2.5 20 2.0 -55 to + 175 300 10lbxin (1.1Nxm) Units A W W/C V V/ns C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy e Avalanche Current d Repetitive Avalanche Energy g 290 See Fig. 14, 15, 22a, 22b mJ A mJ Thermal Resistance Symbol RJC RCS RJA Parameter Junction-to-Case k Case-to-Sink, Flat Greased Surface Junction-to-Ambient jk Typ. --- 0.24 --- Max. 0.40 --- 40 Units C/W www.irf.com 1 06/05/08 IRFP4004PBF Static @ TJ = 25C (unless otherwise specified) Symbol V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 40 --- --- 2.0 --- --- --- --- --- --- 0.035 --- 1.35 1.70 --- 4.0 --- 20 --- 250 --- 200 --- -200 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 5mAd m VGS = 10V, ID = 195A g V VDS = VGS, ID = 250A A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync RG(int) td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 290 --- --- --- --- --- Conditions VDS = 10V, ID = 195A ID = 195A VDS = 20V VGS = 10V g ID = 195A, VDS =0V, VGS = 10V --- 220 59 75 145 6.8 59 370 160 190 8920 2360 930 2860 3110 --- 330 --- --- --- --- --- --- --- --- --- --- --- --- --- S nC --- ns VDD = 20V ID = 195A RG = 2.7 VGS = 10V g VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 0V to 32V i VGS = 0V, VDS = 0V to 32V h --- --- --- --- --- --- Effective Output Capacitance (Energy Related)i --- --- Effective Output Capacitance (Time Related)h pF Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) di Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- 350c 1390 A Conditions MOSFET symbol showing the integral reverse G S D --- --- 1.3 V --- 83 130 ns --- 78 120 --- 190 290 nC TJ = 125C --- 210 320 --- 4.0 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) p-n junction diode. TJ = 25C, IS = 195A, VGS = 0V g TJ = 25C VR = 20V, TJ = 125C IF = 195A di/dt = 100A/s g TJ = 25C Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Refer to App Notes (AN-1140). Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.015mH RG = 25, IAS = 195A, VGS =10V. Part not recommended for use above this value. ISD 195A, di/dt 690A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90C. 2 www.irf.com IRFP4004PBF 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) BOTTOM BOTTOM 100 100 4.5V 4.5V 60s PULSE WIDTH Tj = 25C 10 0.1 1 V DS, Drain-to-Source Voltage (V) 10 10 0.1 60s PULSE WIDTH Tj = 175C 1 V DS, Drain-to-Source Voltage (V) 10 Fig 1. Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance Fig 2. Typical Output Characteristics 2.0 ID = 195A VGS = 10V ID, Drain-to-Source Current (A) 100 T J = 175C 1.5 (Normalized) T J = 25C 10 1.0 VDS = 10V 60s PULSE WIDTH 1.0 3 4 5 6 7 8 0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C) VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Fig 4. Normalized On-Resistance vs. Temperature 12.0 ID= 195A VGS , Gate-to-Source Voltage (V) 10.0 C, Capacitance (pF) VDS= 32V VDS= 24V 10000 Ciss Coss Crss 8.0 6.0 1000 4.0 2.0 100 1 10 VDS, Drain-to-Source Voltage (V) 100 0.0 0 50 100 150 200 250 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage www.irf.com 3 IRFP4004PBF 1000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec ISD, Reverse Drain Current (A) T J = 175C 100 ID, Drain-to-Source Current (A) 1000 10 T J = 25C 100 1msec 10msec 10 Tc = 25C Tj = 175C Single Pulse 1 1 DC 1 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 VSD, Source-to-Drain Voltage (V) 10 VDS, Drain-to-Source Voltage (V) 100 Fig 7. Typical Source-Drain Diode Forward Voltage V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 350 300 ID, Drain Current (A) Fig 8. Maximum Safe Operating Area 52 Id = 5.0mA 50 Limited By Package 250 200 150 100 50 0 25 50 75 100 125 150 175 T C , Case Temperature (C) 48 46 44 42 40 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature 2.5 Fig 10. Drain-to-Source Breakdown Voltage 1200 EAS , Single Pulse Avalanche Energy (mJ) 2.0 1000 ID 36A 73A BOTTOM 195A TOP 800 Energy (J) 1.5 600 1.0 400 0.5 200 0.0 -5 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. DrainCurrent 4 www.irf.com IRFP4004PBF 1 Thermal Response ( Z thJC ) C/W D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 J J 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 2 3 4 4 Ri (C/W) 0.0123 0.0585 0.1693 0.1601 i (sec) 0.000011 0.000055 0.000917 0.008784 1 Ci= i/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 0.001 1E-006 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.05 0.10 10 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01 Fig 14. Typical Avalanche Current vs.Pulsewidth 300 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 195A EAR , Avalanche Energy (mJ) 250 200 150 100 50 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com 5 IRFP4004PBF 5.0 VGS(th) , Gate threshold Voltage (V) 12 IF = 78A V R = 34V TJ = 25C TJ = 125C 4.5 10 4.0 3.5 3.0 2.5 2.0 4 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) 2 0 ID = 250A ID = 1.0mA ID = 1.0A IRR (A) 8 6 200 400 600 800 1000 diF /dt (A/s) Fig 16. Threshold Voltage vs. Temperature 14 IF = 117A V R = 34V TJ = 25C TJ = 125C Q RR (A) Fig. 17 - Typical Recovery Current vs. dif/dt 350 IF = 78A V R = 34V TJ = 25C TJ = 125C 12 300 10 IRR (A) 250 8 200 6 150 4 100 2 0 100 200 300 400 500 600 diF /dt (A/s) 50 0 200 400 600 800 1000 diF /dt (A/s) Fig. 18 - Typical Recovery Current vs. dif/dt 400 IF = 117A V R = 34V TJ = 25C TJ = 125C Fig. 19 - Typical Stored Charge vs. dif/dt 350 300 Q RR (A) 250 200 150 100 0 100 200 300 400 500 600 diF /dt (A/s) 6 Fig. 20 - Typical Stored Charge vs. dif/dt www.irf.com IRFP4004PBF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01 I AS Fig 21a. Unclamped Inductive Test Circuit LD VDS Fig 21b. Unclamped Inductive Waveforms VDS 90% + VDD - D.U.T VGS Pulse Width < 1s Duty Factor < 0.1% 10% VGS td(on) tr td(off) tf Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms Id Vds Vgs L VCC 0 DUT 1K Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 23a. Gate Charge Test Circuit www.irf.com Fig 23b. Gate Charge Waveform 7 IRFP4004PBF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information @Y6HQG@) UCDTADTA6IADSAQ@"A XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S ,5)3( A "$C $%AAAAAAAAAAA$& 96U@A8P9@ @6SA A2A! X@@FA"$ GDI@AC TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/08 8 www.irf.com |
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