View IRHLF73214_4191556.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD-97253
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on) IRHLF77214 100K Rads (Si) 1.0 IRHLF73214 300K Rads (Si) 1.0 ID 3.3A 3.3A
2N7610T2 IRHLF77214 250V, N-CHANNEL
TECHNOLOGY
TO-39
International Rectifier's R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
Features:
n n n n n n n n
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC=25C ID @ VGS = 4.5V, TC=100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 3.3 2.1 13.2 22.7 0.18 10 29 3.3 2.3 3.29 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns C
300 (0.063in/1.6mm from case for 10s) 0.98 (Typical)
g
www.irf.com
1
03/13/08
IRHLF77214, 2N7610T2 Electrical Characteristics @ Tj = 25C (Unless Otherwise specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Pre-Irradiation
Min
250 -- -- 1.0 -- 3.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.22 -- -- -5.2 -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 1.0 2.0 -- -- 1.0 10 100 -100 18 3.0 10 12 47 61 73 -- V V/C V mV/C S A nA nC
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 4.5V, ID = 2.1A VDS = VGS, ID = 250A VDS = 10V, IDS = 2.1A A VDS= 200V ,VGS= 0V VDS = 200V, VGS = 0V, TJ =125C VGS = 10V VGS = -10V VGS = 4.5V, ID = 3.3A VDS = 125V VDD = 125V, ID = 3.3A, VGS = 4.5V, RG = 7.5 A
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
ns
nH
Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad
C iss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
-- -- -- --
611 62 0.64 6.7
-- -- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 3.3 13.2 1.2 371 1.05
Test Conditions
A
V ns C Tj = 25C, IS = 3.3A, VGS = 0V A Tj = 25C, IF = 3.3A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 5.5
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics Pre-Irradiation
IRHLF77214, 2N7610T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Diode Forward Voltage Up to 300K Rads(Si)1
Min
250 1.0 -- -- -- -- --
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = 250A VGS = VDS, ID = 250A VGS = 10V VGS = -10V VDS= 200V, VGS= 0V VGS = 4.5V, ID = 2.1A VGS = 0V, ID = 3.3A
-- 2.0 100 -100 1.0 1.0 1.2
1. Part numbers IRHLF77214, IRHLF73214
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion LET
(MeV/(mg/cm )) Kr Xe Au 36.1 57.8 88.2
2
Energy
(MeV) 463 924 1755
Range
(m) 56 73.2 93.7 0V 250 250 250 -1V 250 250 250 -2V 250 250 -
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
-3V 250 -
-4V 250 -
-5V 250 -
-6V 250 -
-7V 250 -
300 250 200 150 100 50 0 0 -1 -2 -3 -4 -5 -6 -7 VGS
Kr Xe Au
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
VDS
3
IRHLF77214, 2N7610T2
Pre-Irradiation
100
TOP
10
VGS 10V 5.0V 4.5V 3.25V 2.75V 2.5V 2.25V 2.0V TOP VGS 10V 5.0V 4.5V 3.25V 2.75V 2.5V 2.25V 2.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
1
1 2.0V
0.1 2.0V 60s PULSE WIDTH Tj = 25C 0.1 1 10 100
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
0.01
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 3.3A
2.0
ID, Drain-to-Source Current (A)
T J = 25C 10 T J = 150C
1.5
1.0
1
0.5
0.1 2 3 4
VDS = 50V 15 60s PULSE WIDTH 5 6 7 8
VGS = 4.5V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHLF77214, 2N7610T2
4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 2 4 6 8
ID = 3.3A
RDS(on), Drain-to -Source On Resistance ( )
RDS(on), Drain-to -Source On Resistance ()
5
3.5 3 2.5 2 1.5 1 Vgs = 4.5V 0.5 0 1 2 3 4 5 6 7 8 ID, Drain Current (A) T J = 150C
T J = 150C
T J = 25C
T J = 25C 10 12
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs Gate Voltage
Fig 6. Typical On-Resistance Vs Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
315
2.5
VGS(th) Gate threshold Voltage (V)
305 295 285 275 265 255 245
ID = 1.0mA
2.0
1.5
1.0
ID = 50A
ID = 250A
0.5
ID = 1.0mA
ID = 150mA
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( C )
T J , Temperature ( C )
Fig 7 Typical Drain-to-Source Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs Temperature
www.irf.com
5
IRHLF77214, 2N7610T2
Pre-Irradiation
1200
C oss = Cds + Cgd
800
VGS, Gate-to-Source Voltage (V)
1000
VGS = 0V, f = 1 MHz C iss = C gs + Cgd, C ds SHORTED C rss = C gd
12 ID = 3.3A 10 8 6 4 2 0
VDS = 200V VDS = 125V VDS = 50V
C, Capacitance (pF)
Ciss
600
400
Coss
200
Crss
0 1 10 100
FOR TEST CIRCUIT SEE FIGURE 17 0 2 4 6 8 10 12 14 16 18 20 22 24
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
100
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
3.5 3
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
10 T J = 150C 1
T J = 25C
2.5 2 1.5 1 0.5 0
0.1 VGS = 0V
0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V)
25
50
75
100
125
150
T C , Case Temperature (C)
Fig 11. Typical Source-to-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current Vs. Case Temperature
6
www.irf.com
Pre-Irradiation
IRHLF77214, 2N7610T2
100
EAS , Single Pulse Avalanche Energy (mJ)
60
ID , Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on) 10
50
TOP BOTTOM
40
ID 1.5A 2.1A 3.3A
30
1 Tc = 25C Tj = 150C Single Pulse 1 10 100
100s
20
1ms 10ms 1000
10
0.1
0 25 50 75 100 125 150
VDS , Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy Vs. Drain Current
10
Thermal Response ( Z thJC )
D = 0.50
0.20
1
0.10
P DM
0.05 0.02 0.01
0.1 1E-005 0.0001 0.001 0.01 0.1
t1
SINGLE PULSE ( THERMAL RESPONSE )
t2
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
1 10
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
7
IRHLF77214, 2N7610T2
Pre-Irradiation
V(BR)DSS
15V
tp
VDS
L
DRIVER
RG
VGS 20V
. D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
Fig 16a. Unclamped Inductive Test Circuit
4.5V
QG
12V
50K .2F .3F
QGS VG
QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
Fig 17a. Basic Gate Charge Waveform VDS V GS RG VGS
Pulse Width 1 s Duty Factor 0.1 %
IG
ID
Current Sampling Resistors
Fig 17b. Gate Charge Test Circuit
VDS 90%
RD
D.U.T.
VDD
+
-
10% VGS
td(on) tr t d(off) tf
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
8
www.irf.com
Pre-Irradiation
IRHLF77214, 2N7610T2
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 50V, starting TJ = 25C, L= 5.4mH Peak IL = 3.3A, VGS = 10V A ISD 3.3A, di/dt 372A/s, VDD 250V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-205AF (Modified TO-39)
LEGEND 1- SOURCE 2- GATE 3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2008
www.irf.com
9

▲Up To Search▲

Price & Availability of IRHLF73214

	To Download IRHLF73214 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .