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| AEGIS SEMICONDUTORES LTDA. A3L:70TT.XXI VOLTAGE RATINGS Part Number A3L:70TT.02I A3L:70TT.04I A3L:70TT.06I A3L:70TT.08I A3L:70TT.10I A3L:70TT.12I A3L:70TT.14I A3L:70TT.16I VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 125OC 200 400 600 800 1000 1200 1400 1600 TJ = -40 to 0OC 200 400 600 800 1000 1200 1330 1520 VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 125OC 300 500 700 900 1100 1300 1500 1700 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 125 -40 to 150 70 85 155 1.4 IFSM Max. Peak non-rep. surge current 1.53 kA 1.6 1.74 10.11 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial TJ = 125OC, rated VRRM applied after surge. Initial TJ = 125OC, no voltage applied after surge. UNITS O NOTES O 180 half sine wave C C C O A O IF(RMS) Nom. RMS current A 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial TJ = 125OC, rated VRRM applied after surge. 11.02 I t Max. I t capability 11.52 12.56 It 2 1/2 2 2 t = 8.3 ms kA s t = 10ms t = 8.3 ms kA2s1/2 2 Initial TJ = 125 C, no voltage applied after surge. 2 O Max. I t 2 1/2 capability 138.6 Initial TJ = 125OC, no voltage applied after surge. 2 1/2 1/2 tx . It di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage F Mounting Force 150 12 3 150 2 3(5) A/ms W W mA V N.m for time tx = I t * (0.1 < tx < 10ms). TJ = 125 OC, VD = VDRM , ITM = 1600A. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms tp < 5 ms Upper connectors(Heatsink) AEGIS SEMICONDUTORES LTDA. A3L:70TT.XXI CHARACTERISTICS PARAMETER VTM peak on-state voltage VT(TO) Threshold voltage rT Slope resistance IL Latching current IH Holding current td Delay time tq Turn-off time dv/dt Critical rate-of-rise of off-state voltage IRM, IDM Peak reverse and offstate current IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigger RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. --------------80 ------50 4 2 ------------TYP. ----------0.7 125 140 --10 --80 --------------110(4) TO-240AA MAX. UNITS 1.63 1 2.73 400 200 1.5 200 --500 20 300 150 --2.5 0.25 0.19 0.194 0.207 0.1 --mA mA V V V mW mA mA ms ms TEST CONDITIONS Initial T J = 25OC, 50-60Hz half sine, Ipeak = 220A. TJ = 125 OC Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)]2, 180 Half Sine. Use low values for ITM < p rated IT(AV) TC = 125 C, 12V anode. Gate pulse: 10V, 20 W, 100ms. O TC = 25OC, 12V anode. Initial IT = 15A. TC = 25OC, VD = VDRM, 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. TJ = 125 OC, ITM = 500A, di/dt = 25A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated V DRM. Gate: 0V, 100 W. TJ = 125 OC. Exp. to 100% or lin. Higher dv/dt values avaliable. To 80% V DRM, gate open. TJ = 125OC, Exp. To 67% V DRM, gate open. TJ = 125 OC, Rated VRRM and VDRM, gate open. TC = -40OC TC = 25OC TC = -40OC +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. V/ms TC = 25OC TC = 25OC, Max. Value which will not trigger with rated VDRM V anode. OC/W DC operation, single side cooled. OC/W 180 sine wave, single side cooled. O C/W 120 rectangular wave, single side cooled. C/W Mtg. Surface smooth, flat and greased. Single side cooled. ----- O g(oz.) JEDEC Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 120 120 Maximum Allowable Case Temperature 110 110 100 30 100 90 90 30 80 60 90 80 60 70 120 90 70 120 DC 180 60 0 10 20 30 40 50 60 70 80 90 100 *Sinusoidal Waveform 60 *Rectangular Waveform 180 0 10 20 30 40 50 60 70 80 90 100 110 120 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics AEGIS SEMICONDUTORES LTDA. A3L:70TT.XXI Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 0 *Sinusoidal Waveform Maximum Average Forward Power Loss 30 Maximum Average Forward Power Loss (W) 900 800 700 600 30 60 60 500 400 300 200 100 0 *Rectangular Waveform 90 120 180 DC 90 120 180 25 50 75 100 125 150 0 25 50 75 100 125 150 175 Average Forward Current (A) Average Forward Current (A) Fig.3 -Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Forward Voltage Drop 1 Transient Thermal Impedance ZthJC 1000 Instantaneous Forward Current (A) Transient Thermal Impedance ZthJC 1.5 2.0 2.5 3.0 3.5 0.1 100 125C 25C 10 0.5 1.0 0.01 0.01 0.1 1 10 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance AEGIS SEMICONDUTORES LTDA. A3L:70TT.XXI Fig. 7 - Gate Trigger Characteristics TO-240AA 1 ~ G1 K1 + K2 2 G2 - 3 1 2 3 Fig. 8 - Outline Characteristics 45 67 Fig. 9 - Circuit Layout |
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