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| 2SA2007 Transistors High-speed Switching Transistor (-60V,-12A) 2SA2007 !Features 1) High switching speed. (Typ. tf = 0.15s at Ic = -6A) 2) Low saturation voltage. (Typ. VCE(sat) = -0.2V at IC / IB = -6A / -0.3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5526. !External dimensions (Units : mm) 10.0 4.5 3.2 2.8 15.0 12.0 8.0 5.0 1.2 14.0 1.3 0.8 2.54 2.54 (1) (2) (3) (1) (2) (3) 0.75 2.6 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) ROHM : TO-220FN !Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collectorpowerdissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -100 -60 -5 -12 -20 2 25 150 -55 +150 Unit V V V A A(Pulse) W W(Tc=25C) C C !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SA2007 TO-220FN F - 500 !Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob ton tstg tf Min. -100 -60 -5 - - - - - - 160 - - - - - Typ. - - - - - - - - - - 80 250 - - - Max. - - - -10 -10 -0.3 -0.5 -1.2 -1.5 320 - - 0.3 1.5 0.3 Unit V V V A A V V V V - MHz pF s s s Conditions IC = -50A IC = -1mA IE = -50A VCB = -100V VEB = -5V IC/IB = -6A/-0.3A IC/IB = -8A/-0.4A IC/IB = -6A/-0.3A IC/IB = -8A/-0.4A VCE = -2V , IC = -2A VCE = -10V , IE = 1A , f = 30MHz VCB = -10V , IE = 0A , f = 1MHz IC = -6A , RL = 5 IB1 = -IB2 = -0.3A VCC -30V |
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