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| VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 280 1.8 1.95 7.2 3300 V A kA V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 03D6004 Doc. No. 5SYA1225-03 Jan. 02 * Direct fiber optic control * Fast response (tdon < 3 s, tdoff < 6 s) * Precise timing (tdoff < 800 ns) * Patented free floating silicon technology * Optimized low On-state and switching losses * Very high EMI immunity * Cosmic radiation withstand rating Blocking VDRM IDRM VDClink Repetitive peak off-state voltage Repetitive peak off-state current Permanent DC voltage for 100 FIT failure rate 5500 V 20 mA 3300 V VGR 2V VD = VDRM VGR 2V 0 Tj 115 C. Ambient cosmic radiation at sea level in open air. Mechanical data Fm Dp H m Ds Da l h w (see Fig. 9) min. max. 10 kN 14 kN 34 mm 26 mm 0.55 kg 33 mm 13 mm 202.5 mm 46.5 mm 200 mm +0/-0.5 mm 1.0 mm +0/-0.5 mm 0.1 mm 0.5 mm Mounting force Pole-piece diameter Housing thickness Weight IGCT Surface creepage distance Air strike distance Length IGCT Height IGCT Width IGCT ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SHX 03D6004 GCT Data On-state (see Fig. 1) ITAVM ITRMS ITSM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral On-state voltage Threshold voltage Slope resistance 110 A 170 A 1.8 kA 3.6 kA 16.9x10 A s 6.6x10 A s 3.95 V 1.95 V 7.2 m 3 2 3 2 Half sine wave, TC = 85 C tp tp tp tp IT IT = = = = = = 10 ms 1 ms 10 ms 1 ms 280 A 100 - 500 A Tj = 115 C Tj = 115 C After surge: VD = VR = 0V I2t VT VT0 rT Turn-on switching di/dtcrit tdon tr ton (min) Eon Max. rate of rise of on-state current Turn-on delay time Rise time Min, on-time Turn-on energy per pulse 90 A/s 3 s 1 s 10 s 0.15 J f IT VD IT RS = = = = = 500 Hz 280 A 3300 V 280 A 5.2 0.5 F Tj Tj Li = = = 115 C 115 C 75 A/s 44.5 H 1 H VD = 3900 V di/dt = LCL = CCL = Turn-off switching (see Fig. 2, 3) ITGQM tdoff tf toff (min) Eoff Max. controllable turn-off current Turn-off delay time Fall time Min. off-time Turn-off energy per pulse 280 A 6 s 1 s 10 s 1.5 J VDM VDRM VD VD Tj = = = 3300 V 3300 V 115 C ITGQM Tj = 115 C 1 H VDRM 5.2 44.5 H 1 H LCL VDM Rs Li = = ITGQ = CCL = 0.5 F LCL ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1225-03 Jan. 02 page 2 of 9 5SHX 03D6004 Diode Data On-state (see Fig. 4) IFAVM IFRMS IFSM I2t VF VF0 rF Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral On-state voltage Threshold voltage Slope resistance 65 A 100 A 1.9 kA 4.4 kA 18.2x10 A s 2 9.6x103 A s 3 2 Half sine wave, TC = 85 C tp tp tp tp IF IF = = = = = = 10 ms Tj = 115 C 1 ms After surge: 10 ms VF = VR = 0V 1 ms 280 A 100 - 500 A Tj = 115 C 6.5 V 3.52 V 10.7 m Turn-off switching (see Fig. 5, 6) di/dtcrit Irr Err Max. rate of rise of on-state current Reverse recovery current Turn-off energy 90 A/s 170 A 0.8 J IF = 280 A 3900 V 3300 V 5.2 0.5 F IF = Li = LCL = 280 A 115 C 44.5 H 1 H 75 A/s Tj = Tj = 115 C VCL = VCL = di/dt = Rs = CCL = Gate Unit Power supply (see Fig. 9 to 11) VGDC PGin Gate Unit voltage Gate Unit power consumption 20 0.5 VDC 11 W Without galvanic isolation to power circuit. fS = 500 Hz, ITGQ AV = 115 A, = 0.9 X1 Gate Unit power connector WAGO, Part Number 231-532/001-000 Note 1 Optical control input/output (see Fig. 9 to 11) Pon CS Poff CS tGLITCH CS Optical input power Optical noise power Pulse width threshold Receiver for command signal > < -20 dBm Valid for 1mm plastic optical fibre -45 dBm (POF) 450 ns Max. pulse width without response Agilent, Type HFBR-2528 Note 2 Note 1: WAGO, www.wago.com Note 2: Agilent Technologies, www.semiconductor.agilent.com ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1225-03 Jan. 02 page 3 of 9 5SHX 03D6004 Thermal Tjop Tstg Tamb RthJC GCT RthJC Diode RthCH GCT RthCH Diode Operating junction temperature range Storage temperature range Ambient operational temperature range Diode not dissipating GCT not dissipating Diode not dissipating GCT not dissipating 0...115 -40...60 0...60 C C C Thermal resistance junction to case 70 K/kW Double side cooled 90 K/kW 16 K/kW Double side cooled 16 K/kW Thermal resistance case to heatsink ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1225-03 Jan. 02 page 4 of 9 5SHX 03D6004 GCT Part IT [A] 600 Tj = 115C E off [J] 1.5 Tj = 115 C 500 400 1.0 VD = 3300V 300 200 0.5 100 0 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 VT [V] 0.0 0 100 200 300 ITGQ [A] Fig. 1 GCT on-state characteristics. Fig. 2 GCT turn-off energy per pulse vs. turn-off current. ITGQ [A] 300 Tj = 0..115 C V DM V DRM V RM V RRM 200 Li = 44.5 H CCL = 0.5 F LCL = 1.0 H Rs = 5.2 100 0 0 1000 2000 3000 4000 5000 VD [V] Fig. 3 Max. repetitive GCT turn-off current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1225-03 Jan. 02 page 5 of 9 5SHX 03D6004 Diode Part IF [A] 600 Tj = 115C Err [J] 0.9 0.8 500 0.7 400 0.6 0.5 300 0.4 200 0.3 0.2 100 0.1 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 VF [V] 0.0 0 100 200 300 IFQ [A] Tj = 115C diF/dt = 75 A/s VD = 3300 V Fig. 4 Diode on-state characteristics. Fig. 5 Diode turn-off energy per pulse vs. turn-off current. Irr [A] 250 Tj = 115C diF/dt = 75 A/s VD = 3300 V IFQ [A] 300 Tj = 0 - 115C diF/dt = 75 A/s VDM VDRM 200 200 150 100 100 50 0 0 100 200 300 IFQ [A] 0 0 1000 2000 3000 4000 5000 VD [V] Fig. 6 Diode reverse recovery current vs. turn-off current. Fig. 7 Max. repetitive diode forward current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1225-03 Jan. 02 page 6 of 9 5SHX 03D6004 PGin [W] 20 fs = 1000 Hz fs = 500 Hz fs = 50 Hz 15 10 5 0 0 20 40 60 80 100 120 ITGQ ave [A] Fig. 8 Gate Unit power consumption. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1225-03 Jan. 02 page 7 of 9 5SHX 03D6004 Fig. 9 Device Outline Drawing. RC-IGCT Gate Unit X 1 Supply (20VDC) RC-GCT Internal Supply (without galvanic isolation to power circuit) Anode Gate TurnOn Circuit CS Command Signal (Light) Rx Logic Monitoring TurnOff Circuit Cathode Fig. 10 Block diagram. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1225-03 Jan. 02 page 8 of 9 5SHX 03D6004 1 Turn-on di/dt ITM VD IT 0.9 VD CS CS VG tdon tr tdoff 0.1 VD 0.05 VD VDSP Turn-off VDM VD 0.8 ITGQ 0.3 ITGQ IT tf VG Fig. 11 General current and voltage waveforms with IGCT-specific symbols. Li LCL Rs DUT GCT - part VLC CCL DUT Diode - part LLoad Fig. 12 Test circuit. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Doc. No. 5SYA1225-03 Jan. 02 Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com |
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