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| MITSUBISHI SEMICONDUCTOR IMIN PREL . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY M63850P/FP 4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE PIN CONFIGURATION COM 1 O1 2 IN1 3 GND 16 O4 15 IN4 14 VDD 13 12 DESCRIPTION The M63850P/FP is a inverter input power DMOS transistor array that consists of 4 independent output N-channel DMOS transistors. 4 5 GND FEATURES 4 circuits of N-channels DMOS High breakdown voltage (VDS 80V) High-current driving (IDS(max) = 1.5A) With clamping diodes Drain-source on-state low resistance (RON = 0.72, @ = 1.25A) Wide operating temperature range (Ta = -40 to +85C) IN2 6 NC 7 O2 8 11 IN3 10 O3 9 COM NC : No connection Package type 16P4(P) 16P2N(FP) CIRCUIT DIAGRAM VDD COM OUTPUT 30k INPUT 4.2k APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps) GND The four circuits share the COM and GND. FUNCTION The M63850P/FP is consists of 4 independent N-channel DMOS transistors. Each DMOS transistor is connected in a common-source with GND PIN. The clamp diodes for spike killers are connected between the output pin and the COM pin of each DMOS transistor. The maximum of Drain current is 1.5A. The maximum Drain-Source voltage is 80V. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VDD VDS IDS VI VR IF Pd Topr Tstg Parameter Supply voltage Drain-source voltage Drain current Input voltage (Unless otherwise noted, Ta = -40 ~ +85C) Conditions Output, H Current per circuit output, L Ratings 7 -0.5 ~ +80 1.5 -0.5 ~ VDD 80 1.5 1.47(P)/1.00(FP) -40 ~ +85 -55 ~ +125 Unit V V A V V A W C C Apr. 2005 Clamping diode reverse voltage Clamping diode forward current Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board MITSUBISHI SEMICONDUCTOR IMIN PREL . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY M63850P/FP 4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VDD VDS Parameter Supply voltage Drain-source voltage Drain current (Current per 1 circuit when 4 circuits are coming on simultaneously) "H" input voltage "L" input voltage (Unless otherwise noted, Ta = -40 ~ +85C) Conditions Limits min 4.5 0 typ 5.0 -- -- max 5.5 80 1.25 Unit V V IDS VDD = 5V, Duty Cycle P : no more than 4% FP : no more than 2% VDD = 5V, Duty Cycle P : no more than 36% FP : no more than 15% 0 A 0 VCC-1.0 0 -- -- -- 0.7 VCC VCC-3.0 V V VIH VIL ELECTRICAL CHARACTERISTICS Symbol IDD(ON) IDD(OFF) IO(LEAK) VON RON IIH IIL IR VF Parameter On supply current Off supply current Output leak current Output on voltage Output on resistance "H" input current "L" input current Clamping diode reverse current Clamping diode forward voltage (Unless otherwise noted, Ta = 25C) Test conditions VDD = 5.5V, VI = 0V, 1 circuit only VDD = 5.5V, VI = 5.5V VDD = 5.5V, VI = 5.5V, VDS = 80V VI = 4.5V, IDS = 0.7A VI = 4.5V, IDS = 1.25A VI = 4.5V, IDS = 1.25A VDD = 5.5V, VI = 5.5V VDD = 5.5V, VI = 0V VR = 80V IF = 1.25A Limits min -- -- -- -- -- -- -- -- -- -- typ 130 -- -- 0.45 0.9 0.72 -- -130 -- 1.3 max 300 10 10 0.72 1.44 1.15 10 -300 10 2.0 Unit A A A V A A A V SWITCHING CHARACTERISTICS Symbol ton toff Parameter Turn-on time Turn-off time (Unless otherwise noted, Ta = 25C) Test conditions CL = 15pF (Note 1) TIMING DIAGRAM Limits min -- -- typ 45 125 max -- -- Unit ns ns Note 1 : TEST CIRCUIT INPUT VDD Measured device OPEN PG 50 OUTPUT VO INPUT 50% 50% RL OUTPUT CL 50% 50% ton (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50, VIH = 5V (2)Input-output conditions : RL = 8.3, Vo = 10V, VDD = 4.5V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes. toff Apr. 2005 MITSUBISHI SEMICONDUCTOR IMIN PREL . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY M63850P/FP 4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 -160 VDD = 5V Input Characteristics Power dissipation Pd (W) 1.0 M63850FP 0.744 Input current II (A) 1.5 M63850P -120 -80 Ta = 85C 0.5 0.520 -40 Ta = -40C Ta = 25C 0 0 25 50 75 85 100 0 0 1 2 3 4 5 Ambient temperature Ta (C) Duty Cycle - Drain Current Characteristics (M63850P) 2.0 Input voltage VDD - VI (V) Duty Cycle - Drain Current Characteristics (M63850P) 2.0 *The drain current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneouslyoperated circuit. *Ta = 85C, VDD = 5V Drain current IDS (A) 1 Drain current IDS (A) 1.5 1.5 1.0 2 *The drain current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C, VDD = 5V 1.0 1 2 3 4 0.5 3 4 0.5 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Duty Cycle - Drain Current Characteristics (M63850FP) 2.0 *The drain current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneouslyoperated circuit. *Ta = 25C, VDD = 5V Duty Cycle - Drain Current Characteristics (M63850FP) 2.0 *The drain current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneouslyoperated circuit. *Ta = 85C, VDD = 5V Drain current IDS (A) Drain current IDS (A) 1.5 1.5 1.0 1 2 3 4 1.0 1 2 3 4 0.5 0.5 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Apr. 2005 MITSUBISHI SEMICONDUCTOR IMIN PREL . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY M63850P/FP 4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE Input Voltage - Drain Current Characteristics 1.6 On-state supply current IDD(ON) (A) VDD = 5V VDS = 2V Supply Voltage - On Supply Current Characteristics 160 VI = 0.5V One circuit only Drain current IDS (A) 1.2 Ta = -40C 120 0.8 Ta = 25C Ta = 85C 80 Ta = 85C 0.4 40 Ta = -40C Ta = 25C 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Input voltage VI (V) Output On Voltage - Drain Current Characteristics 1.6 VDD = 4.5V VI = 0.5V Supply voltage VDD (V) Output On Voltage - Drain Current Characteristics 200 VDD = 4.5V VI = 0.5V Drain current IDS (A) Drain current IDS (A) 1.2 160 Ta = -40C Ta = -40C 120 Ta = 85C 0.8 Ta = 85C Ta = 25C 80 Ta = 25C 0.4 40 0 0 0.4 0.8 1.2 1.6 0 0 0.05 0.10 0.15 0.20 Output on voltage VON (V) Output on voltage VON (V) Clamping Diode Characteristics Clamping diode forward current IF (A) Switching Characteristics 103 7 5 Ta = 25C 1.6 Switching time (nsec) 1.2 Ta = 85C 3 2 toff 0.8 Ta = 25C 102 7 5 3 2 ton 0.4 Ta = -40C 0 0 0.4 0.8 1.2 1.6 101 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Drain current IDS (mA) Clamping diode forward voltage VF (V) Apr. 2005 MITSUBISHI SEMICONDUCTOR IMIN PREL . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY M63850P/FP 4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE Drain-source on-state resistance RON () 1.0 Drain-source on-state resistance RON () Drain Current - Output On Resistance Characteristics Ta = 25C Vcc = 4.5V Output On Resistance - Ambient Temperature Characteristics 1.6 VDD = 4.5V 0.8 Vcc = 5.0V 1.2 0.6 Vcc = 5.5V 0.8 0.4 0.2 0.4 01 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Drain current IDS (mA) 0 -40 -20 0 20 40 60 80 100 Ambient temperature Ta (C) Apr. 2005 |
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