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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. 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Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. 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Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SD1163, 2SD1163A Silicon NPN Triple Diffused ADE-208-909 (Z) 1st. Edition September 2000 Application TV horizontal deflection output Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter 2SD1163, 2SD1163A Absolute Maximum Ratings (Ta = 25C) Rating Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC I C (peak) I C (surge) PC * Tj Tstg 1 2SD1163 300 120 6 7 10 20 40 150 -55 to +150 2SD1163A 350 150 6 7 10 20 40 150 -55 to +150 Unit V V V A A A W C C Electrical Characteristics (Ta = 25C) 2SD1163 Item Collector cutoff current Symbol I CBO Min -- -- Collector to emitter breakdown voltage Emitter to base breakdown voltage V(BR)CEO V(BR)EBO 120 6 25 -- -- -- Typ -- -- -- -- -- -- -- -- Max 5 -- -- -- -- 2.0 1.2 0.5 2SD1163A Min -- -- 150 6 25 -- -- -- Typ -- -- -- -- -- -- -- -- Max -- 5 -- -- -- 1.0 1.2 0.5 V V s Unit mA mA V V Test conditions VCB = 300 V, IE = 0 VCB = 350 V, IE = 0 I C = 10 mA, RBE = I E = 10 mA, IC = 0 VCE = 5 V, IC = 5 A*1 I C = 5 A, IB = 0.5 A*1 I C = 5 A, IB = 0.5 A*1 I CP = 3.5 A, I B1 = 0.45 A DC current transfer ratio hFE Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1. Pulse test. VCE (sat) VBE (sat) tf 2SD1163, 2SD1163A Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 50 30 Collector current IC (A) 10 3 1.0 0.3 2SD1163 0.01 0 50 100 Case temperature TC (C) 150 10 Area of Safe Operation (40 V, 20 A) ure ict rP Fo 40 20 (120 V, 0.9 A) 30 100 300 1,000 Collector to emitter voltage VCE (V) Typical Output Characteristics 1.0 12 10 TC = 25C DC current transfer ratio hFE 8 6 4 2 mA IB = 0 0 6 8 10 2 4 Collector to emitter voltage VCE (V) 500 DC Current Transfer Ratio vs. Collector Current VCE = 5 V 200 100 50 20 10 5 0.1 TC = 75C 25C -25C g cin Ar be Tu (150 V, 0.5 A) 2SD1163A (350 V, 5 mA) Collector current IC (A) 0.8 0.6 0.4 0.2 0.2 0.5 1.0 2 5 Collector current IC (A) 10 2SD1163, 2SD1163A Collector to Emitter Saturation Voltage vs. Collector Current 3 IC/IB = 10 75C 2 Base to emitter saturation voltage VBE(sat) (V) 1.5 IC/IB= 10 Base to Emitter Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) 1.0 TC = -25C 75C 0.5 25C 1 TC = -25C, 25C 0 0.1 0.2 0.5 1.0 2 5 Collector current IC (A) 10 0 0.1 0.2 0.5 1.0 2 5 Collector current IC (A) 10 2SD1163, 2SD1163A When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 |
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