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| DG2722 Vishay Siliconix 2 Port, USB 2.0 High Speed (480 Mbps) Switch, DPDT Analog Switch DESCRIPTION The DG2722 is 2 port high speed analog switch optimized for USB 2.0 signal switching. The DG2722 switch is configured in DPDT. It handles bidirectional signal flow, achieving a 900 MHz - 3 dB bandwidth, and a port to port crosstalk and isolation at - 49 dB. Processed with high density sub micron CMOS, the DG2722 provide low parasitic capacitance. Signals are routed with minimized phase distortion and attain a bit to bit skew is as low as 40 pS. The DG2722 is designed for a wide range of operating voltages, from 2.7 V to 4.3 V that can be driven directly from one cell Li-ion battery. On-chip circuitry protects against conditions when either the D+/D- lines are shorted to the VBUS at the USB port. Additionally, logic control pins (S and OE) can tolerate the presence of voltages that are above the supply power rail (V+). The control logic threshold is guaranteed to be (VIH = 1.3 V/min). Latch up current is 300 mA, as per JESD78, and its ESD tolerance exceeds 8 kV. Packaged in ultra small miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm), it is ideal for portable high speed mix signal switching application. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with lead (Pb)-free device termination. The miniQFN-10 package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free "-E4" suffix to the ordering part number. The nickel-palladium-gold device terminations meet all JEDEC standards for reflow and MSL rating. As a further sign of Vishay Siliconix's commitment, the DG2722 is fully RoHS complaint. FEATURES * * * * * * * * * * * Wide operation voltage range Low on-resistance, 7 (typical at 3 V) Low capacitance, 5.6 pF (typical) RoHS COMPLIANT 3 dB high bandwidth: 900 MHz (typical) Low bit to bit skew: 40 pS (typical) Low power consumption Low logic threshold: V Power down protection: D+/D- pins can tolerate up to 5 V when V+ = 0 V Logic (S and OE) above V+ tolerance 8 kV ESD protection (HBM) Latch-up current 300 mA per JESD78 Lead (Pb)-free low profile miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm) * APPLICATIONS * Cellular phones * * * * * Portable media players PDA Digital camera GPS Notebook computer * TV, monitor, and set top box FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION miniQFN-10L HSD1+ HSD16 5 HSD2+ 7 OE 8 Control V+ 9 4 HSD2- Rx S 10 1 D+ Pin 1: LONG LEAD 2 DPin 1 Device marking: Rx for DG2722 x = Date/Lot Traceability Code 3 GND Top View Document Number: 68379 S-82507-Rev. B, 13-Oct-08 www.vishay.com 1 DG2722 Vishay Siliconix ORDERING INFORMATION Temp. Range - 40 C to 85 C Package miniQFN-10 Part Number DG2722DN-T1-E4 TRUTH TABLE OE (Pin 8) 0 0 1 S (Pin 10) 0 1 X Function D+ = HSD1+ and D- = HSD1D+ = HSD2+ and D- = HSD2Disconnect PIN DESCRIPTIONS Pin Name OE S HSD1, HSD2, D Description Bus Switch Enable Select Input Data Port ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter S, OE, D, HSD1, HSD2a Current (Any Terminal except S, OE, D, HSD1, HSD2) Continuous Current (S, OE, D, HSD1, HSD2) Peak Current (Pulsed at 1 ms, 10 % Duty Cycle) Storage Temperature (D Suffix) Reference to GND V+ Limit - 0.3 to 5.0 - 0.3 to (V+ + 0.3) 30 250 500 - 65 to 150 208 8 300 Unit V mA C mW Power Dissipation (Packages)b miniQFN-10c ESD (Human Body Model) I/O to GND kV Latch-up (Current Injection) mA Notes: a. Signals on S, OE, D, HSD1, HSD2 exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.6 mW/C above 70 C. SPECIFICATIONS V+ = 3.0 V Test Conditions Otherwise Unless Specified RDS(on) V+ = 3.0 V, ID = 8 mA, VHSD1/2 = 0.4 V V+ = 3.0 V, ID = 8 mA, VHSD1/2 = 0.4 V V+ = 3.0 V, ID = 8 mA, VHSD1/2 = 0.0 V, 1.0 V V+ = 4.3 V, VHSD1/2 = 0.3 V, 3.0 V, VD = 3.0 V, 0.3 V V+ = 4.3 V, VHSD1/2 = 0.3 V, 4.0 V, VD = 4.0 V, 0.3 V V+ = 3.0 V to 3.6 V V+ = 4.3 V V+ = 3.0 V to 4.3 V VIN = 0 or V+ Limits - 40 C to 85 C Temp.a Min.b Full Room Full Room Room Full Full - 100 - 200 0.8 2.0 100 nA 200 0 7 Typ.c Max.b V+ 8 9 Unit V Parameter Analog Switch Analog Signal Ranged On-Resistance On-Resistance Flatnessd Switch Off Leakage Current Channel On Leakage Current Digital Control Input Voltage High Input Voltage Low Input Capacitance Input Current Matchd Symbol VANALOG RDS(on) RON RON Flatness I(off) I(on) On-Resistance Resistance VINH VINL CIN IINL or IINH Full Full Full Full Full 1.3 1.5 0.5 5.6 -1 1 pF A V www.vishay.com 2 Document Number: 68379 S-82507-Rev. B, 13-Oct-08 DG2722 Vishay Siliconix SPECIFICATIONS V+ = 3.0 V Test Conditions Otherwise Unless Specified Limits - 40 C to 85 C Temp.a Room Full V+ = 3.0 V, VD1/2 = 1.5 V, RL = 50 , CL = 35 pF Room Full Room Full CL = 1 nF, RGEN = 0 , VGEN = 0 V V+ = 3.0 V to 3.6 V, RL = 50 , CL = 5 pF, f = 240 MHz V+ = 3.0 V to 3.6 V, RL = 50 , - 3 dB 0.5 - 30 - 45 900 1.3 V+ = 3.3 V, f = 1 MHz Room 1.3 2.7 6.5 50 V+ = 3.0 V to 3.6 V, RL = 50 , CL = 5 pF 20 200 2.6 VIN = 0 V, or V+ Full 4.3 2 V A ps pF Min.b Typ.c Max.b Unit Parameter Dynamic Characteristics Break-Before-Make Timee, d Enable Turn-On Timee, d Enable Turn-Off Timee, d Charge Injectiond Off-Isolationd Crosstalkd Bandwidthd Channel-Off Capacitanced Channel-On Capacitance d Symbol tBBM tON(EN) tOFF(EN) QINJ OIRR XTALK BW CD1 (off) CD2 (off) CD (off) CD (on) tSK(O) tSK(p) tJ V+ I+ 5 30 25 pC dB MHz ns Channel-to-Channel Skewd Skew Off Opposite Transitions of the Same Outputd Total Jitterd Power Supply Power Supply Range Power Supply Current Notes: a. Room = 25 C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, not subjected to production test. e. VIN = input voltage to perform proper function. f. Crosstalk measured between channels. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68379 S-82507-Rev. B, 13-Oct-08 www.vishay.com 3 DG2722 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 28 26 24 RON - On-Resistance () 22 20 18 16 14 12 10 8 6 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VD - Analog Voltage (V) 0 0 0.5 1 1.5 2 2.5 3 V+ = 3.3 V V+ = 3.6 V V+ = 4.3 V V+ = 2.6 V V+ = 3.0 V T = 25 C IS = 8 mA D1 RON - On-Resistance () 30 V+ = 2.6 V ION = 8 mA 25 + 85 C 20 + 25 C 15 10 - 40 C 5 VD - Analog Voltage (V) RON vs. VD and Single Supply Voltage 25 V+ = 3.0 V ION = 8 mA 20 RON - On-Resistance () RON - On-Resistance () + 25 C 15 + 85 C 20 25 RON vs. Analog Voltage and Temperature V+ = 3.3 V ION = 8 mA + 85 C 15 + 25 C 10 - 40 C 5 10 - 40 C 5 0 0 0.5 1 1.5 2 2.5 3 VD - Analog Voltage (V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature 25 V+ = 3.6 V ION = 8 mA 20 RON - On-Resistance () RON - On-Resistance () + 85 C 15 20 25 RON vs. Analog Voltage and Temperature V+ = 4.3 V ION = 8 mA + 85 C 15 + 25 C 10 + 25 C 10 - 40 C 5 5 - 40 C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VD - Analog Voltage (V) VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature RON vs. Analog Voltage and Temperature www.vishay.com 4 Document Number: 68379 S-82507-Rev. B, 13-Oct-08 DG2722 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 10 mA 1 mA V+ = 4.3 V I+ - Supply Current (A) 100 A 10 A 1 A 100 nA 10 nA 1 1 nA 100 pA 10 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) 0.1 - 60 - 40 - 20 V+ = 3.0 V V+ = 2.6 V V+ = 3.3 V Leakage Current (pA) 100 V+ = 3.6 V 1000 10 000 V+ = 4.3 V ID(ON) 10 ID(OFF) ID(OFF) 0 20 40 60 80 100 120 140 Temperature (C) Supply Current vs. Input Switching Frequency 1.20 1.15 1.10 VT - Switching Threshold (V) 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5 -8 1 -6 -7 VIL VIH -3 Gain (dB) -4 -5 -1 -2 0 Leakage Current vs. Temperature 10 100 Frequency (MHz) 1000 10 000 V+ - Supply Voltage (V) Switching Threshold vs. Supply Voltage 0 - 10 - 20 - 30 Off Isolation (dB) - 40 - 50 - 60 - 70 - 80 - 90 - 100 1 10 100 1000 Crosstalk (dB) 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 90 - 100 1 Gain vs. Frequency, V+ = 3.3 V 10 100 Frequency (MHz) 1000 Frequency (MHz) Off-Isolation, V+ = 3.3 V Crosstalk, V+ = 3.3 V Document Number: 68379 S-82507-Rev. B, 13-Oct-08 www.vishay.com 5 DG2722 Vishay Siliconix TEST CIRCUITS V+ Logic Input HSD1 or HSD2 OE GND 0V CL (includes fixture and stray capacitance) VOUT = D Logic "1" = Switch on Logic input waveforms inverted for switches that have the opposite logic sense. S RL 50 CL 35 pF V+ D Switch Output VOUT 0.9 x V OUT Switch Output 0V tON tOFF VINH 50 % VINL tr < 5 ns tf < 5 ns Switch Input Logic Input (R L RL +R ON ) Figure 1. Switching Time V+ Logic Input D VO RL 50 CL 35 pF VINH VINL tr < 5 ns tf < 5 ns V+ VHSD1 VHSD2 HSD1 HSD2 HSD1 = HSD2 VO 90 % OE GND S Switch 0V Output tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen + V+ HSD1 or HSD2 OE VOUT D VOUT VOUT IN CL = 1 nF On Off Q= x CL On Vgen VIN = 0 - V+ GND S OUT IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection www.vishay.com 6 Document Number: 68379 S-82507-Rev. B, 13-Oct-08 DG2722 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ 10 nF V+ HSD1 or HSD2 OE D 0 V, 2.4 V V+ D Meter OE 0 V, 2.4 V HSD1 or HSD2 S GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz RL GND S Analyzer VD Off Isolation = 20 log V HSD2 or HSD1 Figure 4. Off-Isolation Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68379. Document Number: 68379 S-82507-Rev. B, 13-Oct-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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