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| Preliminary SIM150D12SV3 VCES = 1200V Ic = 150A VCE(ON) typ. = 2.7V @ Ic = 150A "HALF-BRIDGE" IGBT Module Features Update NPT Technology design 10s Short circuit capability Low turn-off loss Short tail current for over 18KHz Positive VCE(on) temperature coefficient Applications SMPS & Electrolysis Machine High Power Inverters High Frequency inverter-type Welding machines Servo Controls UPS, EPS or Robotics PKG V3 62 mm Absolute Maximum Ratings @ Tj=25 Symbol VCES VGES IC ICM IF IFM TSC Viso Tj Tstg Weight Mounting Torque (per leg) Condition VGE = 0V, Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Power Terminal Screw : M5 Terminal connection Screw : M5 TC = 80 TC = 80 TC = 80 Ratings 1200 20 150 300 150 300 10 Unit V V A A A A IC = 1.0mA s V AC 1 minute 2500 -40 ~ 150 -40 ~ 125 360 3.5 3.5 g Nm Nm Electrical Characteristics @ Tj = 25 Symbol V(BR)CES VCE(ON) VGE(th) ICES IGES VFM (unless otherwise specified) Min 1200 - Parameters Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop Typ 2.7 5.0 Max 3.1 6.0 1.0 200 Unit Test conditions VGE = 0V, IC = 1.0mA V IC = 150A, VGE = 15V VCE = VGE, IC = 500A VCE = 1200V VGE = 20V - 2.1 mA nA V VGE = 0V, VCE = 0V, IC = 150A 2.4 www.semiwell.com Preliminary Switching Characteristic @ Tj = 25 Symbol Cies Coss Cres SIM150D12SV3 Max A ns ns pF (unless otherwise specified) Min - Parameters Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode Peak Reverse Recovery current Diode Reverse Recovery time Typ 8200 790 320 105 45 425 58 55 185 Unit Test conditions VCC = 30V, f = 1.0MHz VGE = 0V td(on) tr td(off) tf Irr trr Tj = 125 , VCC = 600V IC = 150A, RG = 4.7 VGE = 15V Tj = 125 , VCC = 600V IF = 150A, VGE = 15V RG = 4.7, di/dt=1200A/us Thermal Characteristic Values Symbol R R R Parameters Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied) Min - Typ 0.04 Max 0.15 0.30 - Unit Preliminary SIM150D12SV3 Fig 1. Maximum DC Collector Current vs. Case Temperature Fig 2. Power Dissipation vs. Case Temperature Fig 3. Typ. IGBT Output Characteristics TJ = 25 ; tp = 80s Fig 4. Typ. IGBT Output Characteristics TJ = 125 ; tp = 80s Preliminary SIM150D12SV3 Fig 5. Typ. Diode Forward Characteristics tp = 80s Fig 6. Typ. Transfer Characteristics VCE = 50V; tp = 10s Fig 7. Typical VCE vs. VGE TJ = 25 Fig 8. Typical VCE vs. VGE TJ = 125 Preliminary SIM150D12SV3 Fig 9. Typ. Capacitance vs. VCE VGE = 0V; f = 1Mhz Fig 10. Typical Gate Charge vs. VGE ICE = 120A; L = 600H Fig 11. Typ. Switching Time vs. IC TJ = 125 ; L = 200H; VCE = 600V RG = 4.7; VGE = 15V Fig 12. Typ. Switching Time vs. RG TJ = 125 ; L = 200H; VCE = 600V ICE = 150A; VGE = 15V Preliminary SIM150D12SV3 Fig 13. Normalized Transient Thermal Impedance, Juncion-to-Case (IGBT) Fig 14. Normalized Transient Thermal Impedance, Juncion-to-Case (DIODE) Preliminary Package Outline (dimensions in mm) SIM150D12SV3 Preliminary SIM150D12SV3 June 2008 Headquarter: #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789 Web-site: www.semiwell.com E-mail: sales@semiwell.com Marketing: clzhang@semiwell.com |
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