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| Ordering number : ENA0475 2SD2721 SANYO Semiconductors DATA SHEET 2SD2721 Features * * * * NPN Triple Diffused Planar Silicon Transistor Driver Applications Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C Conditions Ratings 160 120 6 12 20 3.0 75 150 --55 to +150 Unit V V V A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=160V, IE=0A VEB=4V, IC=0A VCE=5V, IC=1A VCE=5V, IC=5A VCE=5V, IC=1A VCB=10V, f=1MHz 100 35 15 140 MHz pF Ratings min typ max 0.1 0.1 200 Unit mA mA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408DA TI IM TC-00001236 No. A0475-1/4 2SD2721 Continued from preceding page. Parameter Base-to-Emitterr Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCE=5V, IC=5A IC=5A, IB=0.5A IC=5mA, IE=0A IC=50mA, RBE= IE=5mA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Conditions Ratings min typ 0.2 160 120 6 0.56 3.3 0.4 max 1.5 2.0 Unit V V V V V s s s Package Dimensions unit : mm (typ) 7504-001 Switching Time Test Circuit IB1 OUTPUT IB2 VR 50 RB PW=20s D.C.1% 16.0 5.0 3.4 5.6 3.1 8.0 INPUT RL= 10 + + 470F VCC=50V 22.0 21.0 100F 0.8 4.0 2.8 2.0 0.7 20.4 0.9 VBE= --5V 2.1 IC=10IB1= --10IB2=5A 1 2 5.45 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH 5.45 3.5 20 18 IC -- VCE 500mA 400mA Collector Current, IC -- A 8 7 6 5 IC -- VBE VCE=5V Collector Current, IC -- A 16 14 300mA 200mA 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 20C 25C 100mA 80mA 60mA 40mA 20mA 4 3 2 1 IB=0mA 9 10 0 0 0.5 1.0 1.5 IT13291 Collector-to-Emitter Voltage, VCE -- V IT13290 Base-to-Emitter Voltage, VBE -- V Ta= 1 --40C No. A0475-2/4 2SD2721 5 3 2 hFE -- IC VCE=5V 1.0 7 VCE(sat) -- IC IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Ta=120C 5 3 2 DC Current Gain, hFE 25C 100 7 5 --40C 0.1 7 5 3 2 = Ta --40C 12 C 0 3 2 25C 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 0.01 23 5 7 0.1 23 5 7 1.0 2 3 5 7 10 23 IT13293 Collector Current, IC -- A 5 3 2 IT13292 3.5 ASO Collector Current, IC -- A PC -- Ta ICP=20A IC=12A 10 100 ms ms DC op Collector Current, IC -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 PC =7 Collector Dissipation, PC -- W 1m s 3.0 5W 2.5 2.0 No er he ati at on 1.5 sin k 1.0 0.5 0.01 1.0 Tc=25C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 0 0 20 40 60 80 100 120 140 160 IT13294 Collector-to-Emitter Voltage, VCE -- V 100 Ambient Temperature, Ta -- C IT11332 PC -- Tc Collector Dissipation, PC -- W 80 75 60 40 20 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT11333 No. A0475-3/4 2SD2721 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice. PS No. A0475-4/4 |
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