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| AP72T02GH/J RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 9m 62A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP72T02GJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 25 20 62 44 190 60 0.4 3 Units V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Rthj-a . Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 2.5 62.5 110 Units /W /W /W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200807177 AP72T02GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.02 8 11 42 13 2.7 9 8 80 22 6 930 250 180 1.1 Max. Units 9 15 3 1 25 100 21 1490 1.7 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=10V, ID=30A VGS=4.5V, ID=15A VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=25V, VGS=0V Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (T j=175 C) o VDS=20V ,VGS=0V VGS= 20V ID=30A VDS=20V VGS=4.5V VDS=15V ID=30A RG=3.3,VGS=10V RD=0.5 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=30A, VGS=0V IS=15A, VGS=0V, dI/dt=100A/s Min. - Typ. 26 15 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25 , IAS=24A. 4.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP72T02GH/J 180 120 T C =25 C ID , Drain Current (A) o 10V 7.0V ID , Drain Current (A) T C =175 C o 10V 7.0V 5.0V 120 80 5.0V 4.5V 4.5V 60 40 V G =3.0V V G =3.0V 0 0 2 4 6 8 0 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 35 1.8 I D =15A T C =25 25 I D =30A V G =10V Normalized RDS(ON) 1.4 RDS(ON) (m) 15 1 5 0.6 2 4 6 8 10 -50 0 50 100 150 200 VGS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 30 Normalized VGS(th) (V) 1.4 20 1.2 IS(A) T j =175 o C T j =25 o C 10 0.6 0 0 0.2 0.4 0.6 0.8 1 1.2 0.0 -50 0 50 100 150 200 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP72T02GH/J f=1.0MHz 12 10000 I D = 30 A VGS , Gate to Source Voltage (V) 9 6 C (pF) V DS = 10 V V DS = 15 V V DS = 20 V 1000 C iss 3 C oss C rss 0 0 10 20 30 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (R thjc) Duty factor=0.5 0.2 100 ID (A) 100us 0.1 0.1 0.05 PDM 0.02 10 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C T c =25 o C Single Pulse 1 0.1 1 10 1ms 10ms 100ms 1s DC 100 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance 120 40 V DS =5V T j =25 o C T j =175 o C RDS(ON) (m ) 30 2.8V 3V 3.2V 3.5V 3.8V 4.2V ID , Drain Current (A) 80 20 4.5V 10V 40 10 0 0 2 4 6 8 0 0 20 40 60 80 100 V GS , Gate-to-Source Voltage (V) I D (A) Fig 11. Transfer Characteristics Fig 12. Drain-Source On Resistance 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 SYMBOLS Millimeters MIN NOM MAX A2 A3 B1 D D1 E3 1.80 0.40 0.40 6.00 4.80 3.50 2.20 0.5 5.10 0.50 -0.35 2.30 0.50 0.70 6.50 5.35 4.00 2.63 0.85 5.70 1.10 2.30 0.50 2.80 0.60 1.00 7.00 5.90 4.50 3.05 1.20 6.30 1.80 -0.65 E2 E3 E1 F F1 E1 E2 e C B1 F1 F 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e e A2 R : 0.127~0.381 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Number Package Code meet Rohs requirement 72T02GH LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D A Millimeters SYMBOLS c1 D1 A A1 B1 E1 E B2 MIN NOM MAX 2.20 0.90 0.50 0.60 0.40 0.40 6.40 5.20 6.70 5.40 ---5.88 2.30 1.20 0.69 0.87 0.50 0.50 6.60 5.35 7.00 5.80 2.30 6.84 2.40 1.50 0.88 1.14 0.60 0.60 6.80 5.50 7.30 6.20 ---7.80 c c1 D A1 B2 B1 F D1 E E1 e F 1.All Dimensions Are in Millimeters. c 2.Dimension Does Not Include Mold Protrusions. e e Part Marking Information & Packing : TO-251 Part Number 72T02GJ YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence 6 |
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